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    J3 S9013 Search Results

    J3 S9013 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    PS9013-Y-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler, , / Visit Renesas Electronics Corporation
    PS9013-Y-V-F3-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler Visit Renesas Electronics Corporation
    PS9013-Y-V-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler, , / Visit Renesas Electronics Corporation
    PS9013-Y-F3-AX Renesas Electronics Corporation 1 Mbps, Open Collector Output, High CMR, IPM DRIVER, 5-PIN SSOP (LSO5) Photocoupler Visit Renesas Electronics Corporation

    J3 S9013 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)


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    OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz PDF

    s9013 transistor

    Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 PDF

    S9013 SOT-23

    Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
    Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23 PDF

    S9013 J3

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 S9013 S9012. PDF

    Untitled

    Abstract: No abstract text available
    Text: S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics


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    S9013LT1 OT-23 S9013LT1 50mAdc) PDF

    S9013

    Abstract: No abstract text available
    Text: S9013 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Unit


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    S9013 OT-23 S9013 50mAdc) PDF

    Untitled

    Abstract: No abstract text available
    Text: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    S9013LT1 OT-23 S9013LT1 13-May-05 50mAdc) SMAL20uA PDF

    S9013LT1

    Abstract: No abstract text available
    Text: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    S9013LT1 OT-23 S9013LT1 13-May-05 50mAdc) PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M


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    WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW 500mA 500mA 30MHz PDF

    S9012M

    Abstract: S9013M
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M


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    WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW S9012M S9013M PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range


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    OT-23 OT-23 S9013LT1 500mA S9013LT1 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR NPN SOT–323 FEATURES  High Collector Current  Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-323 S9013W 500mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR Parameter Symbol 0.95 0.4 0.95 1.9 2.4 1.3 2.9 Power dissipation


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    OT-23 S9013LT1 037TPY 950TPY 550REF 022REF PDF

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA) z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


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    S9013 500mAï S9012. 300mW) OT-23 BL/SSSTC082 PDF

    J3 s9013

    Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA) z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


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    S9013 500mA S9012. 300mW) OT-23 BL/SSSTC082 J3 s9013 S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23 PDF

    NPN Silicon Epitaxial Planar Transistor

    Abstract: transistor s9012 S9012 S9013W J3 SOT
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA) z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PT=200mW S9013W Pb Lead-free APPLICATIONS z High Collector Current.


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    S9013W 500mA S9012. 200mW) OT-323 BL/SSSTF011 NPN Silicon Epitaxial Planar Transistor transistor s9012 S9012 S9013W J3 SOT PDF

    Untitled

    Abstract: No abstract text available
    Text: FS9952_LP1 Data Sheet 2,000 counts auto range DMM IC. Rev. 1.8 Aug 2006 Fortune Semiconductor Corp. FS9952_LP1-DS-18_EN CR-004 FS9952_LP1 Taipei Office: 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742


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    FS9952 LP1-DS-18 CR-004 PDF

    FS9952

    Abstract: No abstract text available
    Text: FS9952_LP2-DS-10_EN Datasheet OCT 2006 F P r R ro SC p ef e ’ er rti en es ce O nl y REV. 1.0 FS9952_LP2 Fo 2,000 counts auto range DMM IC FS9952_LP2 Fo F P r R ro SC p ef e ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


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    FS9952 LP2-DS-10 FS9952 64-pin PDF

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


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    MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 PDF

    TPT5609

    Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
    Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)


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    2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A PDF

    S9013LT1

    Abstract: No abstract text available
    Text: S9013LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .CO LLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25°C) Collector current 0.5 A ICM: Collector-base voltage V(BR)CBo :40V Operating and storage junction temperature range Tj.Tstg :-55°C to+150°C UNIT: mm


    OCR Scan
    OT-23 S9013LT1 150eC S9013LT1 160uA 140uA 120uA 100uA PDF

    transistor BR 9013

    Abstract: 9013 NPN transistor 9013 H NPN
    Text: M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR NPN 4 '" FEATURES Oi Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 A C ollector-base voltage V(BR)CBO:40V


    OCR Scan
    S9013LT1 Symbo350 S9013LT1 transistor BR 9013 9013 NPN transistor 9013 H NPN PDF

    59013

    Abstract: S9013 s9013 transistor IC-500
    Text: 1 S9013 couxcToq NPN General Purpose Transistors % - v€ v2 SOT-23 ri/nrrR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Symbol V a lu e V CEO VCBO 25 lc Total Device Dissipation FR-5 Board 1)


    OCR Scan
    TA-25t TA-25 S9013 59013 s9013 transistor IC-500 PDF