J3 TRANSISTOR Search Results

J3 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

J3 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CHT9013PT Abstract: h 033 marking J2 sot-23 MARKING J3 SOT-23 J1 TRANSISTOR J3 SOT-23 transistor SOT23 J1 Text: CHENMKO ENTERPRISE CO.,LTD CHT9013PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)	Original	CHT9013PT 25Volts OT-23 OT-23) 120uA 100uA CHT9013PT h 033 marking J2 sot-23 MARKING J3 SOT-23 J1 TRANSISTOR J3 SOT-23 transistor SOT23 J1	PDF
CHT9013GP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)	Original	CHT9013GP 25Volts OT-23 OT-23) 120uA 100uA CHT9013GP	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz	PDF
s9013 transistor Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3	PDF
Contrans V17131 Abstract: contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1 Text: Trennschaltversta¨rker V17131-16 2 Kana¨le, 2 x Transistorausgang J3 J6 • Anschluß Initiatoren, Schaltkontakte, Na¨herungsschalter HB Contrans I A B & ■ galvanische Trennung zwischen Einga¨ngen, Ausga¨ngen und Energieversorgung ■ Drahtbruch- und Kurzschlußu¨berwachung	Original	V17131-16 Contrans V17131 contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1	PDF
S9013 SOT-23 Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23 Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23	PDF
S9013 J3 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 S9013 S9012.	PDF
1117 S Transistor Abstract: TOSHIBA bat Transistor b 1117 Text: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode	OCR Scan	GT5J311 GT5J311 30//s 1117 S Transistor TOSHIBA bat Transistor b 1117	PDF
GT10J312 Abstract: CP20A Text: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode	OCR Scan	GT10J312 GT10J312, 100fl CP20A	PDF
Untitled Abstract: No abstract text available Text: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS	OCR Scan	BF491j2 BF492, BF493 BF491 BF492 BF493 500mA 625mW 12mW/Â	PDF
clare mercury relay Abstract: MJ15022 equivalent mj15024 HGP-1045 MJ15022 TA9166B i30b RCA9166A RCA9166B TA9166A Text: G E SOLI» STATE 387 5081 G E SOLID ÏÏÏ S T AT E DE J3Ö7SDÖ1 □□174ûti 1 01E 17486 D General-Purpose Power i ? “ RCA9166Ä, RCA9166B, MJ15022, MJ15024	OCR Scan	307SDfll 174flh 33-IS RCA9166Ã RCA9166B, MJ15022, MJ15024 O-204AA RCA9166A* RCA9166B' clare mercury relay MJ15022 equivalent mj15024 HGP-1045 MJ15022 TA9166B i30b RCA9166A RCA9166B TA9166A	PDF
113 marking code PNP transistor Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3	OCR Scan	2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 113 marking code transistor T146 transistor PNP transistor 2SB	PDF
TOP3 package Abstract: 2SD917 TOP-3 package Text: PANASONIC INDL/ELEK -CIO 1SE D • bTBSñSa 0010453 5 Silicon Triple Diffused Planar Transistor T-J3-/3 2SD917 NPN TOP-3 Package 2SD917 (NPN) High Power TV Deflection Absolute Maximum Ratings (Ta=25°C) Item Collector-Base Voltage Collector-Hmitter Voltage	OCR Scan	2SD917 2SD917 TOP3 package TOP-3 package	PDF

TRANSISTOR BI 187 Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126 Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage	OCR Scan	BUV71 T0126 15A3DIN TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126	PDF
2SK797 Abstract: No abstract text available Text: Ôi\|b427S2S 6427525 N E C 0Dlflci4S û ELECTRONICS 98D INC 18942 ~ C ~ J3 ~ r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D ESC R IPTIO N The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATU RES	OCR Scan	Jb457S2S 2SK797 2SK797	PDF
MMBT2369 Abstract: MMBT2369A MMPQ2369 MMPQ3725 Text: This Surface Mount Transistors Material n~ In a fc-" fc-1 UJ O til Discrete POWER & Signal Technologies National Semiconductor' Surface Mount Transistors Copyrighted □ a a -C NPN Saturated Switches JE -0 ui By o J3 fc-1 Device No. SOT-23 Mark V Case Style	OCR Scan	OT-23 MMBT2369 O-236 MMBT2369A MMPQ2369 MMPQ3725 SO-16	PDF
2N5449 Abstract: 2N5447 2N5448 2N5450 BOX69477 CEB npn Text: 2N5447 2N5450 th ro u g h COMPLEMENTARY SILICON GENERAL- PURPOSE AF TRANSISTORS •' -, J3= h. . * s ì ,;:;:;'.: & 4« CASE TO-92F THE 2N5447» 2N5448, 2N5449, 2F5450 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE MEDIUM POWER AMPLIFIER APPLICATIONS. THE 2N5447, 2N5448 ARE PNP	OCR Scan	2N5447 2N5450 2N5447, 2N5448, 2N5449, 2N5448 O-92F 2N5449 BOX69477 CEB npn	PDF
BD242B Abstract: BD242C BD242S 17533 BD241 BD241A BD241B BD241C BD242 BD242A Text: oï 3875081 G E SOLID ß F j3 fl7 S 0 fll 0017533 L STATE 0 1~E 1 7 5 3 3 D Pro Electron Pow er Transistors BD242, BD242A, BD242B, BD242C File N u m b e r 672 Epitaxial-Base Silicon P-N-P	OCR Scan	BD242, BD242A, BD242B, BD242C BD241, BD241A, BD241B, BD241C BD242B BD242S 17533 BD241 BD241A BD241B BD241C BD242 BD242A	PDF
MMBT2222A Abstract: No abstract text available Text: This I tr Material In □ . m tr1 Discrete POW ER & Signal Technologies LM National Semiconductor” Surface Mount Transistors LU Copyrighted a a xa -C J3 tr By Ln —3 a NPN General Purpose Amplifiers and Switches V D evice No. SOT-23 Mark M M BT100 (N1)	OCR Scan	O-236 MMBT2222A b5Q1130 MMBT2222A	PDF
2N5683 Abstract: PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola Text: MOTOROLA SC 1 EE D I XSTRS/R F I t.3b?254 Q0ÖMS57 3 r-33-J3 r - 3 3 " / ^ PNP MOTOROLA 2N5683, 2N56S4 SEMICONDUCTOR NPN TECHNICAL DATA 2N5685, 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS 60 -8 0 V O LT S	OCR Scan	r-33-J3 2N5683, 2N56S4 2N5685, 2N5686 2N5683 PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola	PDF
2SC5307 Abstract: No abstract text available Text: TO SH IBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V^ e o -^OOV • Low Saturation Voltage •• V/"cm ' = 0 A\T Cy -Tjvr n- s Ì I n = 9.0m A Tn -J3 0.4 ±0.05	OCR Scan	2SC5307 250mm2 2SC5307	PDF
2N5433 Abstract: No abstract text available Text: SDE D • MÔELÛÔfi OOOGBÎH 23T « I F C 7 - J3 S*- 2 - S_ INTER F E T ^ R ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ N 5 4 3 2 fc2N5433fc2N5434 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at 25°C free-air temperature. • LOW ON RESISTANCE SWITCHES	OCR Scan	fc2N5433fc2N5434 2N5432) 2N5433) 2NS434) 2N5433	PDF
transistor t05 Abstract: RZ3135B28W tRANSISTOR 2.7 3.1 3.5 GHZ cw NPN transistor 458 Text: 1 ^ 3 3 - J3 Philips Components RZ3135B28W Data sheet status Product specification date of issue June 1992 NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711005b ODMbSTO bflH ■ ÎPHIN D E S C R IP T IO N A P P L IC A T IO N	OCR Scan	RZ3135B28W 7110fi5b T-33-13 711Dfl2b transistor t05 RZ3135B28W tRANSISTOR 2.7 3.1 3.5 GHZ cw NPN transistor 458	PDF

J3 TRANSISTOR Search Results

J3 TRANSISTOR Result Highlights (5)

J3 TRANSISTOR Datasheets Context Search

CHT9013PT

CHT9013GP

Untitled

s9013 transistor

Contrans V17131

S9013 SOT-23

S9013 J3

Untitled

1117 S Transistor

GT10J312

Untitled

clare mercury relay

113 marking code PNP transistor

TOP3 package

TRANSISTOR BI 187

2SK797

MMBT2369

2N5449

BD242B

MMBT2222A

2N5683

2SC5307

2N5433

transistor t05