J4 TRANSISTOR Search Results

Contextual Info: DMC26404 Silicon NPN epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J4  Basic Part Number

2SC4311

Contextual Info: • J4 v ¥ > 9 iV 7 Switching Power Transistor HDT series Outline Dimensions 6a 2SC4311 NPN (TP6V80HDT) Case : ITO -220 4.6*9-» 2.7*02 0.7±ti U n it • m m Absolute Maximum Ratings m Item te g n * Symbol Storage Temperature Junction Temperature 3 U 9 9 • '■<—X'ftEE

matsua aluminium capacitors

Abstract: Matsushita aluminium electrolytic capacitors ECA1CM102L electrolytic capacitor date code H60A H60S H63A aluminium electrolytic capacitor ECA0JM470 JV3L
Contextual Info: Issu eN o , : IA J4 -1 J -0 5 -Û 3 S . Date o f Issue : OS*. N ovem ber, 2004 Classification : ItN e w Q C hanged Ö R evised PRODUCT SPECIFICATION Product Description Product Part Num ber Aluminium Electrolytic Capacitor A TYPE M SERIES

2tx transistor

Abstract: 2SC19 2SC1911 2SC1912 transistor 911 2SC191 VERO ELECTRONICS 2SC19H ic 748 ic 747
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR r 2SC 2SC a » "J4 ft x * m INDUSTRIAL APPLICATIONS ° High Speed Switching Applications o Twin Typ« Translator fT*=6.5CH* typ O 10mA * * « # MAXIMUM R A T I N G S ( T a = 2 5iC) ^ C H A R A C T E R I S T I C SYMBOL RATING UNIT

91fm

Abstract: J4-39 J439
Contextual Info: FMMJ4391 to FM M J4393 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PAR TM AR KIN G DETAILS: F M M J4 3 9 1 - C91 F M M J 4 3 9 2 - C 92 FM M J4393 - C 93 APPLICATION AREAS: * LOW ON RESISTANCE SW ITCHES * CHOPPERS ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C

transistor 86 y 87

Contextual Info: WJ-EA41 sBasm « « . ‘Al m ! , MIS _wt * j4* Se» '- .i I; 1000 to 4000 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ WIDE BANDWIDTH: 1000 TO 4000 MHz MEDIUM OUTPUT POWER: +12 dBm TYP. LOW NOISE: 3.5 dB (TYP.) MEDIUM THIRD ORDER INTERCEPT POINT: +23 dBm (TYP.)

HP 450 opto coupler

Abstract: rop 101 ap 4506 A 4506 igbt
Contextual Info: ¥ h o \ HEW LETT mLEM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW 4506 Technical Data F eatu res • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C

smd transistor J3

Abstract: SMD TRANSISTOR D2 smd u1 transistor smd transistor C3 j3 smd transistor smd transistor d4 c3 smd transistor MKDSN1.5 transistor smd j4 smd transistor r2
Contextual Info: STMicroelectronics: STEVAL-ILL007V1 Quantity 1 1 2 1 5 1 2 1 1 1 3 1 1 1 1 1 Ref C1 C2 C3, C4 C5 D2, D4, D5, D6, & D7 J1 J2, J4 J3 L1 Q1 Rs, Rs2, Rs3 R1 R2 R3 R4 U1 Part Description 1200uF/35V electrolytic 220pF/50V ceramic 22nF/50V ceramic 4.7nF/50V ceramic

HCNW4506

Contextual Info: Thpt H E W L E T T mL/ÍM P A C K A R D Intelligent Power Module and Gate Drive Interface Optocouplers HCPL-4506 h c p l-j4 5 6 HCPL-0466 HCNW4506 Technical Data Features • Performance Specified for Common IPM Applications over Industrial Temperature Range: -40°C to 100°C

Molectron Detector

Abstract: molectron J3-09 J9119A molectron J3-05 J3S-10 Molectron j3 molectron J305 boxcar joulemeter
Contextual Info: Features im iiiiiim J3/J4/J3S Series Pyroelectric/Silicon Joulemeter a Wide dynamic range fJ to J a High rep rate to 20 kHz a Large area to 1 cm2 a NIST traceable CAL in V/mJ and V/nJ a Spectral range UM, VIS, Far IR a Excellent EMI shielding a Use directly with oscilloscope

Contextual Info: 8368602 S O L I TRO N D E V I C E S , IN Q ^ b l D E olitron Devices, Inc, If lB b f lb D S e n p c o ts : S P E C I F I C A T I O N S Voltage, Collector to Base VCB0 I T r- ?i-i> NO.: Sa iva- TYPE: //p A / S J4 J& » / CASE: MAXIMUM RATINGS 5 00013^ 0 T 0 -3

J441

Abstract: mosfet J442 IRFJ441 IRFJ442 IRFJ440 IRFJ443 MOSFET "CURRENT source" g581 9409A
Contextual Info: HE D I 4Ô55455 □ 0Gcife»04 7 I • ■ Data Sheet No. PD-9.409A INTERNATIONAL R E C T I F I E R T IN T E R N A T I O N A L RECITI FIE R HEXFET TRANSISTORS !I«R IRFJ440 IRFJ441 N-CHANNEL POWER MOSFETs IRFJ442 IRFJ443 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

1090mhz

Abstract: JESD22-A114 PRA1000
Contextual Info: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit

Contrans V17131

Abstract: contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1
Contextual Info: Trennschaltversta¨rker V17131-16 2 Kana¨le, 2 x Transistorausgang J3 J6 • Anschluß Initiatoren, Schaltkontakte, Na¨herungsschalter HB Contrans I A B & ■ galvanische Trennung zwischen Einga¨ngen, Ausga¨ngen und Energieversorgung ■ Drahtbruch- und Kurzschlußu¨berwachung

Contextual Info: BIPOLAR TRANSISTOR MODULES ' Ratings and Specifications jjfi 600 volts class high F ife — power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t

2SC4406

Abstract: 2SC4269 ITR06763 ITR06764 ITR06765 ITR06766 marking JY
Contextual Info: Ordering number:ENN2759A NPN Epitaxial Planar Silicon Transistor 2SC4406 VHF Frequency Mixer, Local Oscillator Applications Applications Package Dimensions • VHF mixer, frequency converters, local oscillators. unit:mm 2059B Features [2SC4406] 0.15 0.2 0.425

2SC4270

Abstract: ITR06587 ITR06588 ITR06589 ITR06590 ITR06591 transistor KT 816
Contextual Info: Ordering number:ENN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions • Small noise figure : NF=3.0dB typ f=0.9GHz · High power gain : PG=12dB typ (f=0.9GHz) · High cutoff frequency : fT=3.0GHz typ

Ic14nf

Abstract: 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068
Contextual Info: Ordering number:ENN2972 PNP Epitaxial Planar Silicon Transistors 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)

2SC4269

Abstract: ITR06577 ITR06578 ITR06579 ITR06580 ITR06581
Contextual Info: Ordering number:ENN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions • High power gain : PG=15dB typ f=0.4GHz · High cutoff frequency : fT=1.2GHz typ unit:mm 2018B 0.4 0.16 0 to 0.1

TEMPERATURE CONTROL IC 4570

Abstract: SANYO DC 303 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ic 4570
Contextual Info: Ordering number:ENN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)

transistor 75 U50

Abstract: 2DI50M-050 2DI100MA-050 2DI30M-050 M203 M208 M210 6DI100M-050
Contextual Info: BIPOLAR TRANSISTOR M O DULES Ratings and Specifications 600 volts class high Fife power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t cu rren t capacity 75 to 300A , it is possible to m in iatu rize and standardize th e base drive circuit and drive p o w er supply.

2DI100MA-050

Abstract: 6DI100M050 6DI30MA-050 transistor TH 208
Contextual Info: BIPOLAR TRANSISTOR MODULES Ratings and Specifications m 600 volts class high hFE power transistor modules • B eca use t h is m o d u l e has 10 t im e s o r m o r e t h e c o n v e n t i o n a l DC c u r r e n t ga in , set p r o p o r t i o n a l l y f o r ea ch e le m e n t

F J1 3007-2

Abstract: J1 3007-2 J1 3007-1
Contextual Info: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)

J1 3007-1

Abstract: J1 3007-2 2SC4365 ITR06656 ITR06657 ITR06658 ITR06659 ITR06660 F J1 3007-2 marking amplifier j02
Contextual Info: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)