diode J4S
Abstract: j4a diode ZC831 832A J5B SOT23 j4s diode ZC834A DIODE j5s ZC830A ZC831A
Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZC830/A/B
ZC836/A/B
200pA
ZC830)
ZC830B)
ZC830
ZC830A
ZC830B
diode J4S
j4a diode
ZC831
832A
J5B SOT23
j4s diode
ZC834A
DIODE j5s
ZC830A
ZC831A
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j4a diode
Abstract: ZC830B ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Text: ZC830/A/B to ZC836/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 – JANUARY 1998 1 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance IR Typically <200pA at 25V 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZC830/A/B
ZC836/A/B
200pA
ZC830)
ZC830B)
ZC830
ZC830A
ZC830B
j4a diode
ZC830B
ZC830
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
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OT323
BC818W
MUN5131T1.
BC846A
SMBT3904,
MVN5131T1
SMBT3904
OT323
transistor SMD s72
nec mys 501
MYS 99
transistor 8BB smd
st MYS 99 102
kvp 81A
kvp 81A DIODE
Kvp 69A
kvp 86a
smd transistor A7p
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ZC830/A/B to ZC836/A/B ISSUE 4 -JU N E 1996_ I FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lRTypically <200pA at 25V .T ABSOLUTE MAXIMUM RATINGS.
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ZC830/A/B
ZC836/A/B
200pA
ZC836A
ZC830)
ZC830B)
ZC830
ZC830A
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diode J4S
Abstract: ZC831 ZC834A ZC832A
Text: SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 4-JU N E 1996 L . ZC830/A/B to -?Q836/ A/B FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low iR Enabling Excellent Phase Noise Performance lR T ypically <200pA at 25V ABSOLUTE MAXIMUM RATINGS.
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200pA
ZC830/A/B
50MHz
ZC830)
ZC830B)
ZC830/A/B
ZC836/A/B
ZC830
ZC831
ZC832
diode J4S
ZC834A
ZC832A
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Untitled
Abstract: No abstract text available
Text: ZC830/A/B SOT23 SILICON VARIABLE CAPACITANCE DIODES to ZC836/A/B r ISSUE 5 - JANUARY 1998 FE A T U R E S * Close Tolerance C-V Characteristics * High Tuning Ratio * Low lR Enabling Excellent Phase Noise Performance lR Typ ically <200pA at 25V 1 * 3 1 SOT23
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200pA
ZC830/A/B
ZC836/A/B
brZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
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Untitled
Abstract: No abstract text available
Text: P54/74FCT3377A/C 3.3V SSOP QSOP NOTEBOOK LOGIC 3.3V OCTAL D FLIP-FLOPS WITH CLOCK ENABLE FEATURES • Function and Drive Compatible with the Fastest TTL Logic Inputs & Outputs Interface with TTL Logic Levels QSOP (SSOPISO) package for minimum board space requirements
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P54/74FCT3377A/C
FCT3377
24-pin
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ETK85-050
Abstract: 10T2 B-28 B-30 B-31 M102 T151 Transistor B29
Text: ETK85-050 75a '± '< 7 — • JU POWER TRANSISTOR MODULE : Features • 7 U— V .> 7 f f *( # —' F fiM t • h F E ^ f ljl' • Including F re e w h e e lin g Diode High D C Current Gain Insulated Type • ff iiÉ I A pplications • "j + 's V Power Sw itching
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ETK85-050
E82988
11S19^
I95t/R89
10T2
B-28
B-30
B-31
M102
T151
Transistor B29
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P2612
Abstract: Od21 RS-422-A UA9638C
Text: UA9638C DUAL HIGH-SPEED DIFFERENTIAL LINE DRIVER SLLS112A—D2612, OCTOBER 1 9 8 0 - REVISED MARCH 1993 D OR P PACKAGE TOP VIEW Meets EIA Standard RS-422-A Operates From a Single 5-V Supply TTL-and CMOS-Input Compatibility V CC [ 1 U 1 A[ 2 2 A[ 3 GND [ 4
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UA9638C
SLLS112Aâ
D2612,
RS-422-A
uA9638C
RS-422-A.
P2612
Od21
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Untitled
Abstract: No abstract text available
Text: National DS3680 tß Semiconductor DS3680 Quad Negative Voltage Relay Driver General Description The DS3680 is a quad high voltage negative relay driver designed to operate over wide ranges of supply voltage, common-mode voltage, and ambient temperature, with
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DS3680
DS3680
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IRF9640
Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
Text: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •
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IRF9640/9641
IRFP9240/9241
IRF9640/IRFP9240
-200V
IRF9641
/IRFP9241
-150V
IRF9642/IRFP9242
IRF9643/IRFP9243
IRF9640
irf9640 mosfet
IRFP9240
9243
MOSFETs TO-220
diode J4S
IRF9643
IRF9642
IIRF9640
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ulnk
Abstract: No abstract text available
Text: HV209 HV209 m e . Advanced Information 6-Channel SPDT High Voltage Analog Switch Ordering Information_ Package Options VPP - VNN 48-pin TQFP Die 200V HV209FG HV209X Features General Description □ HVCMOS technology for high performance □ Operating voltage of up to 200V
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HV209
48-pin
HV209FG
HV209X
HV209
ulnk
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Untitled
Abstract: No abstract text available
Text: C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS E L 2 0 0 8 C 5 5 M H z 1 A m p B u ffe r A m p lifie r F e a tu r e s G eneral D escrip tion • H ig h slew rate—2500 V/ju.s • W ide b andw idth— 100 M H z @ R l = 50ft 55 M H z @ RL = 10ft • O u tp u t curren t— 1A continuous
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EL2008C
EL2008
EL2008â
M2008
159pF
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schematic diagram tv sony kv 2197
Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
Text: HOW TO USE THIS BOOK If you know the MODEL NUMBER, Use the Model Index on the INSIDE FRONT COVER. If you know the PRODUCT TYPE, Use the TABBED TABLE OF CONTENTS on page v. Or, use the SELECTION GUIDE TABLES at the front of each tabbed section. If you know the M ODEL
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TX712
TX811
schematic diagram tv sony kv 2197
scheme tv color tucson
LOG100
ADC600
ISO106
sony ccd
ADC-817
adc817
SDM857
SHC76
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