J549-ND
Abstract: J655-ND J623-ND J649-ND J632-ND J545-ND J537-ND J621-ND J633-ND J537
Text: RF Connectors MCX Type FEATURES: • 30% Smaller than SMB • Rugged snap-on mating design • Captivated contact ELECTRICAL RATINGS: • Impedance: 50Ω • Frequency Range: 0-6GHz • Working Voltage at sea level: 335 VRMS; 250 VRMS J531-ND and J532-ND . MECHANICAL RATINGS: • Engage/Disengage Force: 5.6 pounds maximum engagement/8 pounds typical
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J531-ND
J532-ND)
J626-ND
J627-ND
J628-ND
J655-ND
J659-ND
J632-ND
J633-ND
J656-ND
J549-ND
J655-ND
J623-ND
J649-ND
J632-ND
J545-ND
J537-ND
J621-ND
J633-ND
J537
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175096-001
Abstract: 172934-001 128941-001 172936-001 172962-001 Ledex 128941-001 172935 J438 3L J425 48-16R-22-55S6
Text: Ledex Hermetically Sealed Packaged Switches Overview . 2 Basic Control Circuits .3-4 Standard Models 5 Pole 2 Throw 13 Pole 2 Throw
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ohms/25
175096-001
172934-001
128941-001
172936-001
172962-001
Ledex 128941-001
172935
J438 3L
J425
48-16R-22-55S6
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KMCJ532512
Abstract: jeida dram 88 pin
Text: 2 Mega Byte DRAM CARD K M C J532512 512K X 32 / 1 M X 16 F ast P age M ode GENERAL DESCRIPTION FEATURES The J532512 is the industry standard high capacity DRAM memory card and consists of • Performance range : SAMSUNG'S advanced TSOP 4M B/W DRAM devices.
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J532512
KMCJ532512
X32/X16
jeida dram 88 pin
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jeida dram 88 pin
Abstract: KMCJ5324000
Text: 16 Mega Byte DRAM CARD J5324000 4M X 32 / 8M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The K M C J5324000 is the industry standard high tRAC tCAC IRC SAMSUNG'S advanced TSOP 4M x4 DRAM devices. J5324000 -6 60 ns 15 ns
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KMCJ5324000
J5324000
KMCJ5324000
14Mx32
jeida dram 88 pin
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm DF15SC4M O UTLINE U n it-m m Package : STO-220 W e ig h t 1 .5 g T y p P y K L l°-(ffl) 10.2 40V 1 5A m Feature a • SMD < SM D • T j= 1 5 0 °C 1Tj= 150°C • P rrsm 1 P r r s m R ating 1 High lo R ating -S m a ll-P K G
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DF15SC4M
STO-220
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode DE3L40 Unit-mm Package : E-pack Weight 0.326g Typ 400V 3A Feature • SMD • SMD • ß y -rx • trr=5Qns • trr=50ns • Low Noise Main Use • Switching Regulator >DC/DC n y tK — S • DC/DC Converter
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DE3L40
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smd diode marking U10
Abstract: Diode marking TY smd diode marking B3 smd diode HB
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation
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STO-220
DF30SC4M
smd diode marking U10
Diode marking TY
smd diode marking B3
smd diode HB
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smd diode schottky code marking 2F
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.
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smd diode HX
Abstract: No abstract text available
Text: Super Fast Recovery Diode mtm OUTLINE Single Diode DE3L20U Unit! mm W eight 0.326g Typ Package : E-pack 200V 3A Feature • SM D • SM D • ß y -rx • Low Noise • trr=35ns • trr=35ns Main Use • Sw itching Regulator >D C / D C n y t K — S • DC/D C Converter
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DE3L20U
smd diode HX
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B & R Automation
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode m fm DF10L60 OUTLINE Unit-mm Weight 1.5g Typ Package : STO-220 10.2 6 0 0 V 10 A Feature • SM D • SMD • High Voltage • trr=50ns 1 r a lî E E • trr=50ns 4.7 Main Use - PFC • PFC(Power Factor Correction)
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DF10L60
STO-220
r1S14
B & R Automation
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smd g4l
Abstract: RC25C
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S6M Unit-mm Weight 0.326g Typ 60V 3A Feature • SM D »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K — 3>
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smd diode marking YK
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use
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2FL20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 2F m tm D2FL20U U n it- m m W e ig h t 0 .1 6 g T y p io y - F - e - ? / C athode m a rk 200V 1.5A 'Iggsl Feature • /Jv P S M D • Sm all SM D • f îy - f X ' • Low Noise • trr=35ns • trr=35ns
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D2FL20U
2FL20U
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm D3FS4A O UTLINE Unit-mm Weight 0.16g Typ Package : 2F iJV - F v - ^ thode m ark 40V 2.6A Feature • /J v P S M D • Small SMD • Tj=150°C • < S V f = 0 .4 5 V • Tj=150°C • Low V f = 0 . 4 5 V :ffiïiE
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode m tm m o u tlin e Package I 1F D1FL20U Unit I mm Weight 0.058g Typ *7 -K v -? 200V 1.1 A Feature *<D • Small SMD • Low Noise • trr-35ns • /J ^ S M D • e y - r x • trr=35ns Main Use • D C / D C n y J Ï- i ?
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D1FL20U
trr-35ns
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DIODE smd marking Ak
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE DF10LC30 U nit‘mm Package : STO-220 Weight lJ>g Typ 102 30 0V 10A Feature • SMD • SMD • e y 'f x • Low Noise • trr= 3 0 n s • trr-3 0 n s 4.7 Main Use • T .'f • D C /D C 3 y i { - 9 • Switching Regulator
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DF10LC30
STO-220
J532-1)
DIODE smd marking Ak
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM
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501lz
J532-1)
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode l ^ DE5LC40 t l l O U T L IN E Unit I mm Weight 0.326g Typ Package I E-pack m 40 0V 5A Feature • SMD G6 • SM D • Low Noise • trr=50ns • trr- 5 0 n s • T . 'f • Switching Regulator • DC/DC 3 y i { - 9 • D C /D C C onverter
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DE5LC40
i50llzâ
J532-1)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode mtmm o u t lin e Package ! E-pack DE5S6M 60V 5A <M > 3 Feature SM D SMD P r r s m 7 ) K 3 y z s i . i£ iiE P rrsm Rating High lo Rating-SmalI-PKG Typ«? Na Dill* code Main Use Z 'f y ï y 'f m m m . 'f - h . o A m m
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5011z
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DF40PC3 o u t lin e 30V 40A Feature • SMD • SMD • ÎS <6V f =0.4V • Ultra-Low Vf=0.4V • High lo Rating'Small-PKG Main Use • Reverse connect protection for DC power source • D C tti^ O R Œ • D C /D C o y <-•$>
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DF40PC3
50Ilz
J532-1)
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10SC4
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM
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DE10SC4
326tf
10SC4
or10ms
J532-1)
10SC4
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3fs 4a
Abstract: smd DIODE 3FS smd diode marking 3fs
Text: Schottky Barrier Diode Single Diode O U T L IN E w n n w D3FS4A U nit! mm P a c k a g e : 2F Weight 0.16g Typ •hy - K - 7 - y 4 0 V 2 .6 A / C arhode m ark Feature I m • Small SMD • Low Vf=0.45V • Prbsm Rating • /JvS yS M D • f f i V f = 0.45 V
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smd regulator marking AJ
Abstract: smd ic marking 1ft DE3L40 SMD AJ smd marking AJ l6 marking smd
Text: Super Fast Recovery Diode wnnm o u t l i n e Single Diode DE3L40 U n it! mm Package : E-pack W eight 0.326g Typ M 400V 3A ï '2 '4 Feature • SM D • SMD • Low Noise • trr-50ns • e y - fx • trr-50ns f i ^31.4 —99 —01 Main Use • • •
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DE3L40
trr-50ns
J532-1
smd regulator marking AJ
smd ic marking 1ft
DE3L40
SMD AJ
smd marking AJ
l6 marking smd
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smd marking VB
Abstract: smd marking VB DIODE smd diode marking BM MARKING FY DF10NC15 smd marking bm SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm o u t lin e DF1 0 N C 15 15 0 V 1 0 A Feature • SM D • SMD • <SlR=0.2mA • Low lR=0.2mA • L> C<. L' • Resistance for thermal run-away Main Use • D C /D C ny K-9 • OA • ilf f l • • • • Switching Regulator
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DF10NC15
STO-220
smd marking VB
smd marking VB DIODE
smd diode marking BM
MARKING FY
DF10NC15
smd marking bm
SHINDENGEN DIODE
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