SOT R23
Abstract: transistor 8P ISL28238 ISL28248 ISL28258 ISL28268 ISL282X8 ISL282X8MSOPEVAL1Z ISL282X8SOICEVAL1Z SOIC 8P
Text: ISL282X8MSOPEVAL1Z ISL282X8SOICEVAL1Z Evaluation Board User’s Guide Application Note August 28, 2008 AN1419.0 Introduction J6 J11 V- V+ The ISL28238 and ISL28248 high-speed operational amplifiers feature low power consumption, while ISL28258 and ISL28268 operational amplifiers feature ultra-low power
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ISL282X8MSOPEVAL1Z
ISL282X8SOICEVAL1Z
AN1419
SOT R23
transistor 8P
ISL28238
ISL28248
ISL28258
ISL28268
ISL282X8
ISL282X8SOICEVAL1Z
SOIC 8P
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100C1296
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. 100C1296 1 5 - 1 00 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective CMOS Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4
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100C1296
100C1296
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CSWX6152
Abstract: airborn connector 5678-5CC AirBorn MA SW10 diode j9 diode rf 046
Text: F E AT U R E S MODEL NO. CSWX6152 20 - 1000 MHz +90 dBm 2nd Order Intercept Point +50 dBm 3rd Order Intercept Point High Isolation TTL Drivers Replaceable SMA Connectors HDI PIN Diode RF Switch Matrix BLOCK DIAGRAM J5 AUX IN 1 J6 AUX IN 2 J13 AUX IN 3 PART IDENTIFICATION
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CSWX6152
5678-5CC,
CSWX6152
airborn connector
5678-5CC
AirBorn MA
SW10 diode
j9 diode
rf 046
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100C1286
Abstract: 836 DIODE
Text: F E AT U R E S MODEL NO. 100C1286 20 - 6 0 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective TTL Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4 J5
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100C1286
100C1286
836 DIODE
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ic 6 pin smd for power supply
Abstract: SMD diode 1420 SOT R23 0603 smd components ISL28246 ISL28246FBZ ISL28246FUZ ISL28256 ISL28266 ISL28236
Text: ISL282x6EVAL1Z Evaluation Board User’s Guide Application Note August 28, 2008 AN1420.0 Introduction J11 J6 V- R31 C2 C4 4.7µF C3 4.7µF C5 0.01µF • ISL28256 Data Sheet • ISL28266 Data Sheet Evaluation Board Key Features The ISL282x6EVAL1Z is designed to enable the IC to
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ISL282x6EVAL1Z
AN1420
ic 6 pin smd for power supply
SMD diode 1420
SOT R23
0603 smd components
ISL28246
ISL28246FBZ
ISL28246FUZ
ISL28256
ISL28266
ISL28236
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Untitled
Abstract: No abstract text available
Text: F E A T U RE S M O D EL N O . 1 0 0 C1 2 8 6 20 - 6 0 0 M Hz High Isolation +40 dBm 3rd Order Intercept Non-Reflective TTL Driver SM A Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586
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Untitled
Abstract: No abstract text available
Text: F E A T U RE S M O D EL N O . CSWX 6 1 5 2 20 - 1000 M Hz +90 dBm 2nd Order Intercept Point +50 dBm 3rd Order Intercept Point High Isolation TTL Drivers Replaceable SM A Connectors HDI PIN Diode RF Sw itch M atrix BLOCK DIAGRAM J5 AUX IN 1 J6 AUX IN 2 J13 AUX IN 3
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5678-5CC,
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Untitled
Abstract: No abstract text available
Text: Application Note 1888 ISL70244SEH Evaluation Board User’s Guide J7 J5 Reference Documents V+ J8 J6 C2 C4 1µF 1µF J9 VREF J10 100 100 V- R11 The ISL70244SEHEV1Z evaluation platform is designed to evaluate the ISL70244SEH. The ISL70244SEH contains two high speed and low power op amps designed to take advantage
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ISL70244SEH
ISL70244SEHEV1Z
ISL70244SEH.
1/10W,
AN1888
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Untitled
Abstract: No abstract text available
Text: Application Note 1669 ISL70227SRH Evaluation Board User’s Guide C4 1µF J9 VREF J10 100 100 R11 C2 1µF D1 C5 Evaluation Board Key Features V+ J8 J6 0.1µF • ISL70227SRH Data Sheet, FN7925 0.01µF C6 0.1µF C7 0.01µF FIGURE 1. POWER SUPPLY CIRCUIT • Wide Supply Operation: 4.5V to 36V
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ISL70227SRH
FN7925
1/10W,
AN1669
ISL70227MHEVAL1Z
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DIODE C18 ph
Abstract: EMERSON rectifier C18 ph diode RESISTOR ROHM R20 smd diode s6 43a digi-key resistor 33 ohm 10w 0.1uF Capacitor Ceramic schottkey DIODE c19 IRLML6401TRPBF
Text: SD307 Bill of Materials Reference Designator C1, C2 C3, C4, C5, C6, C10, C11, C14, C24, C26, C28 C7, C25, C27, C29 C8, C30, C31 C9 C12 C13, C15, C20, C21, C22, C23 C16, C17 C18, C19 D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11 D13 D14 J1, J2 J3, J4, J5, J6
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SD307
WM17116TR-ND
111-0702-001-ND
111-0703-001-ND
A26580
A26576-ND
490-1134-1-ND
IRLML6401PBFCT-ND
RHM75
541-750LCT-ND
DIODE C18 ph
EMERSON rectifier
C18 ph diode
RESISTOR ROHM R20
smd diode s6 43a
digi-key
resistor 33 ohm 10w
0.1uF Capacitor Ceramic
schottkey DIODE c19
IRLML6401TRPBF
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SP8T
Abstract: 8S3223 sp8t rf switch Microwave PIN diode
Text: VS M PRODUCT FEATURE 8S3223 SP8T SWITCH 2.550 with REMOVABLE SMA CONNECTORS Broad Band 2-18 GHz Fast Switching Small Package -55°C to +125°C Operation J6 J5 J7 J4 J3 J2 VS M 8S3223 1.300 1.50 J8 J1 +5V J0 GND E1 E3 E2 SN xxx date -5V • • • • TRUTH TABLE
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8S3223
8S3223
SP8T
sp8t rf switch
Microwave PIN diode
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SP8T
Abstract: TTL 7474 TTL 7475 8S3223 sp8t rf switch
Text: VS M PRODUCT FEATURE 8S3223 SP8T SWITCH 2.550 with REMOVABLE SMA CONNECTORS Broad Band 2-18 GHz Fast Switching Small Package -55°C to +125°C Operation J6 J5 J7 J4 VS M J3 J2 8S3223 1.300 1.50 J8 J1 +5V J0 GND E1 E3 E2 SN xxx date -5V • • • • TRUTH TABLE
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8S3223
8S3223
SP8T
TTL 7474
TTL 7475
sp8t rf switch
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74435566
Abstract: LLP32 RL3720WT-R008-F 2066 AN2066 LM25119 C1608C0G1H101J UMK212B7474KG Nippon capacitors
Text: National Semiconductor Application Note 2066 Eric Lee September 28, 2010 Introduction ed to the J6 OUT2+ and J5 (OUT2-/GND). Be sure to choose the correct connector and wire size when attaching the source power supply and the load. The LM25119EVAL evaluation board provides the design engineer with a fully functional dual output buck converter, employing the LM25119 Dual Emulated Current Mode Synchronous Buck Controller. The evaluation board is designed
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LM25119EVAL
LM25119
AN-2066
74435566
LLP32
RL3720WT-R008-F
2066
AN2066
C1608C0G1H101J
UMK212B7474KG
Nippon capacitors
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j73 diode
Abstract: wp-35 J57 diode MSA0651 J63-J65 p87 diode J69 DIODE PORT80 p82 diode A11P
Text: C1 VCC 0.1uF C2 0.1uF IC1 J1 14 64 VCC CON2 J3 1 2 3 4 96 Vcc AVss AVcc AVref 16 J2 62 99 J4 98 J6 J7 J8 J10 38 37 36 RxD Port_80 Port_81 GND RESET CNVss TxD Vcc Vss J5 4pin CON3 Vss VCC 1 2 3 4 5 6 7 8 9 10 J13 35 J15 34 J17 33 J19 32 J21 31 P60/CTS0/RTS0
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P60/CTS0/RTS0
P61/CLK0
P20/A0
P21/A1
P62/RxD0
P22/A2
P63/TxD0
P23/A3
P64/CTS1/RTS1/CTS0/CLKS1
P24/A4
j73 diode
wp-35
J57 diode
MSA0651
J63-J65
p87 diode
J69 DIODE
PORT80
p82 diode
A11P
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W65C265
Abstract: diode u2 a05 diode A23 C2344 62C256 A06 diode a06 transistor W65C265DB W65C265S OSC14A
Text: 5 4 3 2 1 REVISION RECORD LTR E CO NO: A P PROVED: D A T E: VCC_ARROW VCC_ARROW D 2 4 6 8 D J6 JUMPER4 C3 C C4 C C5 C C6 C C7 C C8 C 23 44 63 84 JP3 1 JP4 3 JP5 5 JP6 7 C2 C Y2 1 EN OUT 8 C 17 12 19 18 16 15 J1 1 3 5 7 WE PHI2 SYNC DODB TG1 TG0 VDD VDD VDD
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OSC14A
W65C265S8PL
P41/IRQB
P40/NMIB/ABORTB
PIO30X2
XC9572
W65C265DB
W65C265
diode u2 a05
diode A23
C2344
62C256
A06 diode
a06 transistor
W65C265S
OSC14A
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vt4vc
Abstract: PLUG P4 2P71 470uf,16v LM1117-ADJ 3-P42 datasheet LM1117 vr1 500 1P40 c1 10uf 16v
Text: 3 4 VR1 VCC 1 2 1 2 2 VCC I2C Connector VCC 1 2 3 4 2 1K R12 J6 24 51 28 50 29 49 30 48 P17 P16 P15 P14 P13 P12 P11 P10 8 7 6 5 4 3 2 1 LED4 33 34 XRES 8 7 6 5 4 3 2 1 P5[7] P5[6] P5[5] P5[4] P5[3] P5[2] P5[1] P5[0] P1[7] P1[6] P1[5] P1[4] P1[3] P1[2] P1[1]
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033uF
162ND
vt4vc
PLUG P4
2P71
470uf,16v
LM1117-ADJ
3-P42
datasheet LM1117
vr1 500
1P40
c1 10uf 16v
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UM9092A
Abstract: UM9092 TP-LINK LANF7236 DPS05R09 RJ45A 74LS164 DM9081 74LS164 circuit Cap Pol1
Text: 1 2 3 4 5 6 7 8 THIS CIRCUIT IS JUST FOR REFERENCE 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 J10 RJ45A 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 J8 RJ45A 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 J7 RJ45A 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 J6 RJ45A 1 2 3 4 5 6 7 8 1 2 3 4
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RJ45A
LANF7236
UM9092A
UM9092
TP-LINK
LANF7236
DPS05R09
RJ45A
74LS164
DM9081
74LS164 circuit
Cap Pol1
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j6 diode
Abstract: J1 DIODE J3 diode MA4BN1840-1 J2 diode J4 diode
Text: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state
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Abstract: No abstract text available
Text: MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 MA4AGSW5 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state
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Abstract: No abstract text available
Text: MA4AGSW5 SP5T AlGaAs PIN Diode Switch Rev. V5 FEATURES • Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 1.7dB Insertion Loss at 50 GHZ 35 dB Isolation at 50 GHz Low Current consumption. -10mA for low loss state
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-10mA
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EM- 546 motor
Abstract: TACHOMETER Magnetic Tachometer
Text: BRIDGE C IR C U IT DRIVES APPLICATION NOTE 3 POWER OPERATIONAL AMPLIFIER H T T P : / / W W W . A P EX M I C R 0 T EC H . CO M M I C I 0 T E C N N 0 L 0 6 Y [j6 m Ä ] 800 546 - A PEX (800) 546-2739 [}1 0 V 7 ] [j6 m Ä ] +35V [W] FOR V|N = Q 5 ] : 5 .9V + 1,6V + 10V = 17.5V
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: lilt FEATURES • +40 dBm 3rd Order Intercept éb ■ Non-Reflective High Isolation PIN Diode SP6T ■ 1 5 - 1000 MHz ■ High Isolation MODEL NO. 100C1296 ■ CMOS Driver ■ SM A Connectors J2 J1 J3 J4 J5 J6 8 PLACES .X X = . 0 2 .x x x s .010 X o TJ »
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100C1296
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode.
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MG30J6ES50
--30A,
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol
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O-218AA
C67078-S3109-A2
O-218
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