Logic Level Gate Drive mosfet
Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM201MN
KSD-T6T002-000
Logic Level Gate Drive mosfet
BJT IC Vce
BJT pnp 45V
mosfet 400 V 10A
bjt 50a
BJT IC Vce 5v
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Untitled
Abstract: No abstract text available
Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM201MN
KSD-T6T002-001
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Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM202MN
KSD-T6T001-002
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Untitled
Abstract: No abstract text available
Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM201MN
KSD-T6T002-000
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12V 10A BJT
Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM202MN
KSD-T6T001-001
12V 10A BJT
Logic Level Gate Drive mosfet
SUM202MN
SUM202
BJT IC Vce
power BJT PNP
BJT pnp 45V
Drive Base BJT
Low Capacitance bjt
BJT IC Vce 5v
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Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM202MN
KSD-T6T001-001
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Untitled
Abstract: No abstract text available
Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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SUM202MN
KSD-T6T001-001
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sot-23-6 pwm controller
Abstract: rt9052 sot-23-6 led driver 1F 5.5V sot-23-6 led driver Marking Information
Text: RT9052 Single Channel LED Current Source Controller General Description Features The RT9052 is a low cost, single channel LED current source controller with a specific FAULT detector. The part can drive an external NPN-BJT for various applications. The RT9052 is operated with Vcc power ranging from 3.8V
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RT9052
RT9052
OT-23-6
DS9052-01
sot-23-6 pwm controller
sot-23-6 led driver
1F 5.5V
sot-23-6 led driver Marking Information
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RT6030
Abstract: ICC12
Text: RT6030 4-CH LED Current Source Controller General Description Features The RT6030 is a current source controller, capable of driving up to 4-CH of LEDs . The part can also be used to drive an external BJT or N-MOSFET for various applications. With a wide operating voltage range from 3.8V to 13.5V,
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RT6030
RT6030
OP-16
DS6030-02
ICC12
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IXAN0061
Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and
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IXAN0061
AN10273
IXAN0061
Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs
JA BJT
depletion mode power mosfet
mosfet depletion
power bjt datasheet
POWER BJTs
transconductance mosfet
Drive Base BJT
BJT with i-v characteristics
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Untitled
Abstract: No abstract text available
Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package
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GN2470
GN2470
O-252
DSFP-GN2470
A100208
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Drive Base BJT
Abstract: vertical pnp bjt Semiconductor Group igbt the calculation of the power dissipation for the IGBT
Text: APPLICATION NOTE AN INTRODUCTION TO IGBTS by M. Melito, A. Galluzzo INTRODUCTION In the low and medium power range, Bipolar Junction Transistors BJTs have up to now been the most commonly used power semiconductors, and they still hold a large part of
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A 3120 opto
Abstract: A 3120 opto coupler HPCL 3120 narrow body SOIC 8 pcb pattern AVAGO MARKING E4 IGBT driver hcpl3120 HPCL0302 SI8221CC-A-IS HPCL3120 HPCL-0302
Text: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I V E R S W I T H O PT O I N P U T 2.5, 3.75, AND 5.0 KVRMS Features Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers 60 ns propagation delay max (independent of input drive current)
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HCPL-0302,
HCPL-3120,
TLP350,
SOIC-16
A 3120 opto
A 3120 opto coupler
HPCL 3120
narrow body SOIC 8 pcb pattern
AVAGO MARKING E4
IGBT driver hcpl3120
HPCL0302
SI8221CC-A-IS
HPCL3120
HPCL-0302
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HPCL 3120
Abstract: a 3120 opto hpcl3120 SOIC127P1032X265-16AN HPCL-3120 HPCL-0302 hpcl inverter A 3120 opto coupler mosfet igbt drivers theory TLP350
Text: S i 8 2 2 0/21 0 . 5 A N D 2 . 5 A M P I S O D R I VE R S W I T H O P T O I N P U T 2.5, 3.75, AND 5.0 KV RMS Features Functional upgrade for HCPL-0302, HCPL-3120, TLP350, and similar opto-drivers 50 ns propagation delay (independent of input drive current)
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HCPL-0302,
HCPL-3120,
TLP350,
SOIC-16
HPCL 3120
a 3120 opto
hpcl3120
SOIC127P1032X265-16AN
HPCL-3120
HPCL-0302
hpcl inverter
A 3120 opto coupler
mosfet igbt drivers theory
TLP350
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Untitled
Abstract: No abstract text available
Text: r= 7 S G S -1 H 0 M S 0 N ^7#« [üifl[| œ[llL[ECTffi[i 0©i L5991 L5991A PRIMARY CONTROLLER WITH STANDBY PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW S T A R T -U P C U R R E N T < 1 40|jA
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L5991
L5991A
100ns
DIP16
L5991
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Untitled
Abstract: No abstract text available
Text: r= 7 S G S -1 H 0 M S 0 N ^7#« [üifl[| œ[llL[ECTffi[i 0©i L5991 L5991A PRIMARY CONTROLLER WITH STANDBY PR O D U C T PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW S T A R T -U P C U R R E N T < 1 50|jA
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L5991
L5991A
100ns
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Untitled
Abstract: No abstract text available
Text: 1 6 5 7 A B P.C.B LAYOUT BOTTOM VIEW C 3 PINs 4 PINs 5 PINs 3264-1-3 3264-1-4 3264-1-5 NO. OF PINs 6 PINs 7 PINs 8 PINs 3264-1-6 3264-1-7 3264-1-8 m PH 45- WJ BJt LEA PROJ SCALE • # -6 3 - DO NO T ’iRiDSE © ., LED. : SCALE F DGN DRW CCJ AMY SHIEH
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NJL5165KL
Abstract: No abstract text available
Text: NJL5165KL Ej r c I # j È ' mm NJL5165KL» , ¡ ^ t t J ^ i O T S S ^ L E D f c ¡ S ! i J f <7 SI 7 a V V7 S C i S a i S I + O T U- > Zittii% 'BJtÉi: L f : ' M 7 i > y ^ i T - f tiB S iC : H t t h U 7 U i ’ ? -T"to m • 2 M t4 .0 m m X 5 .0 m m X 5 .0 m m )
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NJL5165KL
NJL5165KLÂ
NJL5165KL
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tl620
Abstract: cl1100
Text: RF RF2152 MICRO DEVICES DUAL-MODE CDMA/AMPS 3 V POWER A M PLIFIER T y p ic a l A p p lic a tio n s Spread Spectrum Systems • 3 V JCDMA/TACS Cellular Handsets CDPD Portable Data Cards • 3V TDMA/AMPS Cellular Handsets Portable Battery-Powered Equipment POWER AMPLIFIERS
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RF2152
RF2152
800MHz
ufc27
tl620
cl1100
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BiCmos
Abstract: RF2137
Text: RF* RF2137 Preliminary M ICRO-DEVICES LINEAR POWER AMPLIFIER T y p ic a l A p p lic a tio n s • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment P ro d u c t D e s c rip tio n
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F2137
RF2137
800MHz
950MHz
RF2137
BiCmos
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Untitled
Abstract: No abstract text available
Text: RF* RF2137 Preliminary LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 Product D escription The RF2137 is a high power, high efficiency linear ampli
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RF2137
RF2137
800MHz
950MHz
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Untitled
Abstract: No abstract text available
Text: RF* RF2137 Preliminary LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 Product D escription The R F2137 is a high power, high efficie n cy linear a m p li
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RF2137
F2137
RF2137410
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Untitled
Abstract: No abstract text available
Text: RFH RF2132 LINEAR POWER AMPLIFIER MICRO DEVICES Typ ical A p plications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery Powered Equipment 2 A M P L IF IE R S • 4.8V JCDMA/TACS Handsets
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RF2132
RF2132
800MHz
950MHz
IS-95A
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GM6486
Abstract: driver for 7 segment Led indicator
Text: GM6486 33 OUTPUT LED DRIVER. Pin Configunation General Description The GM6486 is a monolithic MOS integrated cir cuit produced with high voltage CMOS technology. It is available in a 40-pin dual in-line plastic package. A single pin controls the LED display
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GM6486
GM6486
40-pin
15mAst
driver for 7 segment Led indicator
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