TD13005D
Abstract: TD13005 TD13004 TD13004D
Text: TD13004D • TD13005D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planar passivation D D D D D Very short switching times Very low switching losses Very low dynamic saturation
|
Original
|
PDF
|
TD13004D
TD13005D
TD13005D
D-74025
TD13005
TD13004
TD13004D
|
BUD636A
Abstract: No abstract text available
Text: BUD636A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD636A
D-74025
BUD636A
|
TP 9212
Abstract: power transistor Ic 4A NPN smd BUD744
Text: BUD744 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD744
BUD744
D-74025
TP 9212
power transistor Ic 4A NPN smd
|
BUD616A
Abstract: No abstract text available
Text: BUD616A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD616A
D-74025
BUD616A
|
Untitled
Abstract: No abstract text available
Text: BUD7312 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD7312
BUD7312
D-74025
|
BUD700D
Abstract: smd transistor S1
Text: BUD700D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate D D D D D Very low switching losses
|
Original
|
PDF
|
BUD700D
D-74025
BUD700D
smd transistor S1
|
BUD620
Abstract: FE2A
Text: BUD620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD620
D-74025
BUD620
FE2A
|
BUD630
Abstract: high voltage TRANSISTOR SMD 1a 9 TRANSISTOR SMD 1a 9 power transistor Ic 4A NPN smd
Text: BUD630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD630
D-74025
BUD630
high voltage TRANSISTOR SMD 1a 9
TRANSISTOR SMD 1a 9
power transistor Ic 4A NPN smd
|
BUD600
Abstract: ic 8853
Text: BUD600 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD600
D-74025
BUD600
ic 8853
|
JAN 8965
Abstract: BUD742 smd transistor 2a 13706 smd transistor 312
Text: BUD742 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature
|
Original
|
PDF
|
BUD742
BUD742
D-74025
JAN 8965
smd transistor 2a
13706
smd transistor 312
|
Untitled
Abstract: No abstract text available
Text: U.S. Distributors DIE DISTRIBUTION Chip Supply, Inc. 7725 Orange Blossom Trail Orlando, FL 32810 Tel: 407 298-7100 Fax: (407) 290-0164 PACKAGED DEVICES ALABAMA Bell Industries Suite 140 8215 Hwy. 20 West Madison, AL 35758 EBV Electronics Suite 16 4835 University Square
|
Original
|
PDF
|
950-2rt
747-NUHO
|
unitronics
Abstract: ACTIVE ELECTRONICS gentech 301 66211 Crystal Semiconductors Conley and Associates Nanjing Micro One Electronics 77535
Text: Worldwide Representatives and Distributors Section 13: WORLDWIDE SALES REPRESENTATIVES AND DISTRIBUTORS Micrel Offices . 1 U.S. Sales Representatives . 2
|
Original
|
PDF
|
1-06A
unitronics
ACTIVE ELECTRONICS
gentech 301
66211
Crystal Semiconductors
Conley and Associates
Nanjing Micro One Electronics
77535
|
VN5E006A
Abstract: VN5E006ASPTR-E
Text: VN5E006ASP-E Single channel high-side driver with analog current sense for automotive applications Datasheet − production data Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 6 mΩ
|
Original
|
PDF
|
VN5E006ASP-E
PowerSO-10
VN5E006A
VN5E006ASPTR-E
|
Untitled
Abstract: No abstract text available
Text: VN5E006ASP-E Single channel high-side driver with analog current sense for automotive applications Datasheet - production data – – – – – "1($'5 PowerSO-10 Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V
|
Original
|
PDF
|
VN5E006ASP-E
PowerSO-10
DocID17753
|
|
|
alpine 3555
Abstract: Newport Components 1013 clare 852 unitronics JI 3009-2 1131L gentech A320 54711 74146
Text: You are in the Sales Info File • Click for Main Menu Product Categories CLICK ANY ITEM Return to Main Menu PC Card Power Protected Switches Low-Dropout Linear Voltage Regulators Switch-Mode Voltage Regulators Voltage References Switched-Capacitor Voltage Converters
|
Original
|
PDF
|
|
PC28F00AP33BF
Abstract: L 1123 1FF4000
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
|
Original
|
PDF
|
P33-65nm
512-Mbit,
105ns
16-word
52MHz
512-word
46MByte/s
32-KByte
P33-65nm
PC28F00AP33BF
L 1123
1FF4000
|
pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
|
Original
|
PDF
|
P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
|
TSOP 48 pin flash gbit
Abstract: JS28F00AP33BF 1FFC000
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
|
Original
|
PDF
|
P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
TSOP 48 pin flash gbit
JS28F00AP33BF
1FFC000
|
Untitled
Abstract: No abstract text available
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
|
Original
|
PDF
|
P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-KByte
|
JS28F512P33BF
Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read
|
Original
|
PDF
|
P33-65nm
512-Mbit
105ns
16-word
52MHz
512-word
46MByte/s
512Mbit,
32-ing
JS28F512P33BF
JS28F512
pc28f00ap33
PC28F00AP33BF
truth table NOT gate 74
JS28F512P33TF
PC28F00AP33TF
JS28F512P33EF
PC28F00BP33EF
JS28F00AP33BF
|
metal detector plans schematic
Abstract: smd transistor R2C 15 1E60 PSPICE MODEL R2R smd n43 RI22 metal detector plans ZC12 sampling phase detector SPD AN1207
Text: Order this document by MC145181/D 19 Advance Information MC145181 Dual 550/60 MHz PLL Frequency Synthesizer with DACs and Voltage Multiplier The MC145181 is a dual frequency synthesizer containing very–low supply voltage circuitry. The device supports two independent loops with a
|
Original
|
PDF
|
MC145181/D
MC145181
MC145181
metal detector plans schematic
smd transistor R2C
15 1E60
PSPICE MODEL R2R
smd n43
RI22
metal detector plans
ZC12
sampling phase detector SPD
AN1207
|
IDT CYPRESS CROSS REFERENCE
Abstract: CY7C
Text: ^ A I S M N SI M 1 C Ü M H t I OR. I NC. C ROSS R E F E R ^ ^ e 'g UIDE SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. DESCRIPTION
|
OCR Scan
|
PDF
|
MT5C1005
MT5C1008
MT5C6404
MT5C6408
MT5C6401
MT5C2564
MT5C2565
MT5C2561
MT5C2568
IDT CYPRESS CROSS REFERENCE
CY7C
|
1N732
Abstract: st 358 ST do35 zen16 1N730A s 10430 1N4126 JAN
Text: Zener Regulator Diodes Part Number ZEN JANTX1N4124-1 JANTX1N4124UR-1 JANTXV1N4124 JANTXV1N4124-1 JANTXV1N4124UR-1 1N730 1N730 D07 1N730A 1N730A (D07) 1N4125 1N4125 (D035) JAN1N4125 JAN1N4125-1 JAN1N4125UR-1 JANTX1N4125 JANTX1N4125-1 JANTX1N4125UR-1 JANTXV1N4125
|
OCR Scan
|
PDF
|
ZEN-16
1N732
st 358
ST do35
zen16
1N730A
s 10430
1N4126 JAN
|
MIL-C-39006
Abstract: No abstract text available
Text: MIL-C-39006 Military Style Tantalum Capacitors i MIL-C-39006 Tantalum Capacitors VIBRATION, HIGH FREQUENCY DESIGN AND CONSTRUCTION Capacitors shall be tested in accordance with method 204 of MILEach fixed capacitor consists of a sintered tantalum anode isolated
|
OCR Scan
|
PDF
|
MIL-C-39006
STD-202.
MIL-C-39006
|
