Untitled
Abstract: No abstract text available
Text: Operation Manual Series MG3702xA RF/Microwave Signal Generators Fast Switching Microwave Signal Generator 100 µsec Switching Speed 10 MHz to 20 GHz Anritsu Company 490 Jarvis Drive Morgan Hill, CA 95037-2809 USA P/N: 10370-10370 Revision: D Printed: October 2013
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MG3702xA
MG369xC
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Untitled
Abstract: No abstract text available
Text: Measurement Guide Cable and Antenna Analyzer for Anritsu’s RF and Microwave Handheld Instruments BTS Master Anritsu Company 490 Jarvis Drive Morgan Hill, CA 95037-2809 USA http://www.anritsu.com Part Number: 10580-00230 Revision: B Published: September 2013
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Abstract: No abstract text available
Text: Operation and Remote Programming Manual ML2437A / ML2438A Power Meter Anritsu Company 490 Jarvis Drive Morgan Hill, CA 95037-2809 USA http://www.anritsu.com Part Number: 10585-00001 Revision: N Published: June 2014 Copyright 2014 Anritsu Company WARRANTY The Anritsu product s listed on the title page is (are) warranted against defects in materials and
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ML2437A
ML2438A
ML2437A/38A
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9434
Abstract: transistor 1877 ADC 50 Ghz p 477 RF 1501 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Text: e PTB 20074 14 watts, 1.477–1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
9434
transistor 1877
ADC 50 Ghz
p 477
RF 1501
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
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PTB 20245
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is
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G-200
1-877-GOLDMOS
1301-PTB
PTB 20245
RF NPN POWER TRANSISTOR C 10-12 GHZ
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resistor qbk
Abstract: No abstract text available
Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11
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1-877-GOLDMOS
1301-PTF10122
resistor qbk
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transistor rf m 9837
Abstract: No abstract text available
Text: e PTF 10114 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 watts power output. Nitride surface
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G-200,
1-877-GOLDMOS
1301-PTF
transistor rf m 9837
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e20231
Abstract: 20231 transistor E101
Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power
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G-200,
1-877-GOLDMOS
1301-PTE
e20231
20231
transistor E101
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RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Abstract: No abstract text available
Text: e PTB 20175 55 Watts, 1.9–2.0 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55 watts minimum output power and may be used for both CW and PEP
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ATC-100
G-200
1-877-GOLDMOS
1301-PTB
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
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PTB20152
Abstract: No abstract text available
Text: e PTB 20152 4 Watts, 340–465 MHz UHF Linear RF Power Transistor Description The 20152 is an NPN, common emitter RF power transistor intended for 20 Vdc class A operation from 340 to 465 MHz. Rated at 4 watts minimum output power, it may be used for both CW and PEP
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ericsson 10159
Abstract: PTF10159 470-860 mhz Power amplifier w
Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power
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UT-85-25
1-877-GOLDMOS
1301-PTF
ericsson 10159
PTF10159
470-860 mhz Power amplifier w
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mpx6115
Abstract: wheatstone bridge invasive blood pressure sensor AN1646 abstract for battery level indicator of lm3914 infusion pump pressure transducer ZO 607 TRIAC TRANSISTOR NPN, b2f piezo buzzer mtbf ABSTRACT FOR water level indicator using 4 led MPX5100
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Sensor Device Data Book DL200/D Rev. 5, 01/2003 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. DATA CLASSIFICATION Product Preview
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DL200/D
DL200/D,
mpx6115
wheatstone bridge invasive blood pressure sensor
AN1646
abstract for battery level indicator of lm3914
infusion pump pressure transducer
ZO 607 TRIAC
TRANSISTOR NPN, b2f
piezo buzzer mtbf
ABSTRACT FOR water level indicator using 4 led
MPX5100
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ADS1256
Abstract: Digital Weighing Scale PIC adc 12bit 5msps adc pic circuit diagram 2804 adc ADS1255 datasheet ads1255 OPA847 Stpd 2045 ultrasound transducer circuit driver 1mhz
Text: R E A L W O R L D S P I G N A L R O C E S S I N G ™ An Analog Product Catalog High-Speed / High-Performance ADCs 2 12-bit, 65MSPS ADC features fast, low-power operation for portable applications Fastest 16-bit, 5MSPS ∆∑ ADCs for imaging and test equipment
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12-bit,
65MSPS
16-bit,
16-bit
23-bits,
30kSPS
14-Bit,
125MSPS
ADS5500
ADS1256
Digital Weighing Scale PIC
adc 12bit 5msps
adc pic circuit diagram
2804 adc
ADS1255
datasheet ads1255
OPA847
Stpd 2045
ultrasound transducer circuit driver 1mhz
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AD6212
Abstract: chopper transformer FOR UPS TLC4545 RS-485 to usart pic interface circuit FET pair n-channel p-channel bridge ultrasonic ADS1218 SN76176 galvanic isolated 4-20 ma pic pwm ultrasonic sensor with 8051 glucose monitor that uses 8051 microcontroller
Text: R E A L W O R L D S I G N A L P R O C E S S I N G SIGNAL ACQUISITION, PROCESSING AND CONTROL FOR I NDUSTRIAL A PPLICATIONS Amplifiers, Data Converters, DSPs, Microcontrollers, Interface, Power Management 2Q 2002 INSIDE High-Performance Amplifiers 4-10 Data Converters
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71514
Abstract: 60147 newport 215-3
Text: ERICSSON $ North American Sales Offices American Sales Region Ericsson Components, Inc. 675 Jarvis Drive Morgan Hill, CA 95037 USA Tel: +1 408 778-9434 Fax: +1 (408) 779-3108 Distributors Corporate Headquarters 40W267 Keslinger Road P.O. Box 393 LaFox, IL 60147-0393
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40W267
71514
60147
newport 215-3
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RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP
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IDG200
Abstract: No abstract text available
Text: ERICSSON $ PTE 10035* 30 Watts, 1.9-2.0 GHz LDMOS Field Effect Transistor Description The 10035 is an internally matched common source n-channel en hancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum
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P4917-ND
P5276
5801-PC
IDG200
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Abstract: No abstract text available
Text: ERICSSON ^ PTB 20239 12 W a t t s , 1 4 6 5 - 1 5 1 3 M H z C e l l u l a r R a d i o RF P o w e r T r a n s i s t o r D escription The PTB 20239 is a class AB, NPN, common em itter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW
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PTE10026
Abstract: No abstract text available
Text: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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Tota20/97
5801-PC
P4917-ND
P5276
5701-PC
PTE10026
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IC 1820
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP
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Abstract: No abstract text available
Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for
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Abstract: No abstract text available
Text: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for
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ericsson rf
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20008 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP
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