Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE Q M 100TX1-H APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm Feb. 1999 ♦ MITSUBISHI
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QM100TX1-H
100TX1-H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm Feb. 1999 A MITSUBISHI ELECTRIC
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QM1000HA-2HB
QM1000HA-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1 0 2 + 0.3 i_ i A 1I d i \ 8 ' { n —• L i
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QM75TF-HB
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm B u P _ . _BwP _ BvP_ . EuPO—
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QM50TB-24B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm •* 1 1" i " 1 1 ' ' A 1 io n L O L
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QM50TB-2HB
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POW ER SW ITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM ' in O Li J CT) CM U D im ensions in mm 11• l_l • II
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QM50TB-24
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm C Feb. 1999 ♦ MITSUBISHI ELECTRIC
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QM1000HA-24B
QM1000H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM in in/I' J in V V D im ensions in mm Tab#110, t=0.5 r-44*-u-4fl-u-44*-i
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QM50TF-HB
-u4fl-u44
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2N4923
Abstract: 2N4922
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and am plifier applications. These high-performance plastic devices feature: • • Low Saturation Voltage — VcE sat = 0-6 Vdc (Max) @ lc = 1-0 Amp
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2N4918
2N4919
2N4920
2N4923
2N4922
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2SD1111
Abstract: BA 7511
Text: Ordering number: EN 751C N o tó le _ 2SD1111 N P N Epitaxial Planar Silicon Darlington Transistor SANYO Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . High DC current gain 5000 or greater .
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2SD1111
2SD1111
BA 7511
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2N8111
Abstract: 2N6107 2N811 2N6109
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* 2N6111 NPN 2N6288 2N6292* . . . designed for use In general-purpose amplifier and switching applications. • • • • DC Current Gain Specified to 7.0 Amperes
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2N6111,
2N6288
2N6109
2N6107
2N6292
2N6288
T0-220AB
2N8111
2N811
2N6109
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LT 5337
Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.
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2N5336
2N5339
2N6190
2N6193
LT 5337
2N5339
2N6193, Motorola
LN 7904
2n5337
2n5338
NS338
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MG100M2YK1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=100A
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MG100M2YK1
MG100M2YK1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon COLLECTOR 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit C o lle c to r- Emitter Voltage V cEO 55 V dc C o lle c to r-B a se Voltage v CBO 80 Vdc Em itte r-B a se Voltage v EB O
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b3b72SS
BC618
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2N5039
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 NPN Silicon Transistors ‘ Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in sw itching regulators, inverters, w id e -b a n d a m p lifie rs and pow er o s c illa to rs in
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2N5038/D
2N5039
2N5038
O-204AA
2N5039
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2N5088
Abstract: 2N5088 MOTOrola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Tran sistors NPN Silicon BASE EMITTER M A X IM U M R A T IN G S Rating C o llector-E m itter Voltage Symbol 2N5088 2N5089 Unit VCEO 30 25 Vdc 35 30 vdc C o llecto r-B ase Vottage VC B O E m itte r-B a s e Voltage
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2N5088
2N5089
2N5088
2N5088 MOTOrola
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K lc Collector current. 100A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized
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QM100DY-24K
E80276
E80271
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ST200Q22
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE ST200Q22 TENTATIVE DATA INDUSTRIAL APPLICATION Unit In ram HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 2 -JZÍ4.0ÍQ2 FEATURES: . High Voltage : VcEX SUS >1200V . Triple Diffused Design . Darlington Design
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ST200Q22
2-60D2A
300/is,
1000kg
ST200Q22
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM50HY-2H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H lc Collector current. 75A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type
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QM75E2Y/E3Y-H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-H Ic Collector current. 50A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type
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QM50E2Y/E3Y-H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM75HA-H Collector current. . 75A • V c e x Collector-emitter voltage. . 600V • hFE DC current gain. . 75 • Insulated Type
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QM75HA-H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 300H A-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300HA-2H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B lc Collector current. 800A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized
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QM800HA-24B
E80276
E80271
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