Untitled
Abstract: No abstract text available
Text: LED HIGH POWER C08 Product Series LED HIGH POWER C08 C08 Product Product Series Series Data Data Sheet Sheet Created CreatedDate: Date:03 03//08 08//2013 2013 Revision: Revision:1.4, 1.3,05 03//08 15//2013 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008
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BNC-OD-C131/A4
LTPL-C08ExSxx
LTPL-C08DxSxx
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qml-38535
Abstract: QML-38534
Text: NOTICE OF REVISION NOR THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. DATE (YYMMDD) 99-04-09 Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the
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5962-9323801MCX
5962-9323802MPX
5962-9323803MCX
5962-9323804MPX
qml-38535
QML-38534
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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BLF8G09LS-270W;
BLF8G09LS-270GW
BLF8G09LS-270W
8G09LS-270GW
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BLF7G10L-250
Abstract: BLF7G10
Text: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 1 — 25 February 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance
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BLF7G10L-250;
BLF7G10LS-250
BLF7G10L-250
7G10LS-250
BLF7G10
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Untitled
Abstract: No abstract text available
Text: LED HIGH POWER P05 Product Series LED HIGH POWER P05 Product Series Data Sheet Created Date: 03 / 13 / 2013 Revision: 1.4, 06 / 17 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER P05 Product Series 1. Description
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BNC-OD-C131/A4
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Untitled
Abstract: No abstract text available
Text: BLF7G15LS-200 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF7G15LS-200
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Untitled
Abstract: No abstract text available
Text: BLF7G15LS-200 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF7G15LS-200
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BLF7G15L-200
Abstract: RO4350 properties 800B RO4350 BLF7G15LS-200
Text: BLF7G15LS-200 Power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF7G15LS-200
BLF7G15L-200
RO4350 properties
800B
RO4350
BLF7G15LS-200
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RO4350 properties
Abstract: RO4350 BLF7G15L-200 800B 15085
Text: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF7G15LS-200
RO4350 properties
RO4350
BLF7G15L-200
800B
15085
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panasonic minas
Abstract: DV0P37300 h1162 Service manual Servo Driver Panasonic matsua motor encoder
Text: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01
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1000a
ISO14001
ISO14001
ISO9001
ISO9001
panasonic minas
DV0P37300
h1162
Service manual Servo Driver Panasonic
matsua motor encoder
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GE2 TRANSISTOR
Abstract: MIL-BUL-103 qml-38535 AD603 military BJT100
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 2 3 4 PREPARED BY RICK C. OFFICER
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AD600SQ/883B
AD602SQ/883B
AD603SQ/883B
GE2 TRANSISTOR
MIL-BUL-103
qml-38535
AD603 military
BJT100
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Untitled
Abstract: No abstract text available
Text: +6 2 BGA3023 1.2 GHz 20 dB gain CATV amplifier Rev. 2 — 25 February 2015 Product data sheet 1. Product profile 1.1 General description The BGA3023 MMIC is a dual wideband amplifier with internal biasing. It is a Medium Power Amplifier MPA , specifically designed as an output stage for high linearity CATV
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BGA3023
BGA3023
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transistor d400 e 1b
Abstract: SOT1211-1 J1889 j2976 nxp power microwave transistor C403 3RD IF
Text: BLM7G22S-60PB; BLM7G22S-60PBG LDMOS 2-stage power MMIC Rev. 1 — 11 December 2012 Product data sheet 1. Product profile 1.1 General description The BLM7G22S-60PB G is a dual path, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the
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BLM7G22S-60PB;
BLM7G22S-60PBG
BLM7G22S-60PB
7G22S-60PBG
transistor d400 e 1b
SOT1211-1
J1889
j2976
nxp power microwave transistor
C403 3RD IF
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ADC1210S
Abstract: No abstract text available
Text: ADC1210S series Single 12-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps; CMOS or LVDS DDR digital outputs Rev. 2 — 23 December 2010 Product data sheet 1. General description The ADC1210S is a single-channel 12-bit Analog-to-Digital Converter ADC optimized for
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ADC1210S
12-bit
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Untitled
Abstract: No abstract text available
Text: ADC1215S series Single 12-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps with input buffer; CMOS or LVDS DDR digital outputs Rev. 2 — 13 January 2011 Product data sheet 1. General description The ADC1215S is a single channel 12-bit Analog-to-Digital Converter ADC optimized for
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ADC1215S
12-bit
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A8-5A-F
Abstract: No abstract text available
Text: J A E ELECTRONICS INC 21E D DQ0GM35 T EMI SHIELDING TYPE - D SUB T ' TYPE m SOLDER TERMINATION D*-F»N TYPE A -/7 -0 3 A '/7-0£ / / - / / 2-fS0.120±0.00S 3.05+0.13 o.3i5max. (N o te D (8 .0 ) (N ote 1 ) The connector basically, Is the same as the standard type D*-N (with stamped
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DQ0GM35
UL94V-0,
A8-5A-F
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CMF 65 1001 F T-1
Abstract: 0005Ohm CMF 1.62 CMF65 1001 F T-1
Text: A COMPANY OF MODEL CMF M etal Film Resistors Industrial FEATURES • Small size - conformai coated • Flame retardant epoxy coating • Controlled temperature coefficient • Excellent high frequency characteristics • Low noise • Low voltage coefficient
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CMF-50
CMF-55
CMF-07*
CMF-60
CMF-20*
CMF-65
CMF-70
10-1M
10-500k
CMF 65 1001 F T-1
0005Ohm
CMF 1.62
CMF65 1001 F T-1
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DAUF-15S-FO
Abstract: No abstract text available
Text: J A E ELECTRONICS INC EIE D • GQOG4Ü1 T ■ /^-/7"03 D*U CRIMP TERMINATION TYPE D*U Standard shell Socket side Pin side 0 .3 9 4 0 .3 9 4 10 0 .2 3 6 (6 .0 ) (10) 0 .2 4 0 (6 . 1) 0.421±0.031 (JO.7±0.8)j" 0 . 4 2 5 ± 0 . 0 3 l - _ ( )0.8+0.8)} Dimensions after mating
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54HCT138
Abstract: marking code V3.V
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION A Convert to m ilit a r y drawing form at. Add vendor CAGE 01295 f o r d e vice types 01 EX, 012X and 01FX. 87 APR 15 B Change drawing CAGE code to 67268. Add vendor CAGE 27014 f o r d e vice type 01EX. Add fo o tn o te 2/ to ta b le I. E d it o r ia l
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IE101295
ISNJ54HCT138W
85504012X
ISNJ54HCT138FK
54HCT138
marking code V3.V
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SP06Q002-TZA
Abstract: Hitachi Scans-001 JIS-K5400
Text: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 ( 7LINE) FAX:(07) 8215815 FOR MESSRS : DATE : May.07.2004 CUSTOMER'S ACCEPTANCE SPECIFICATIONS SP06Q002-TZA CONTENTS No SHEET No.
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SP06Q002-TZA
7B64PS
SP06Q002-TZA-2
Hitachi Scans-001
JIS-K5400
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Untitled
Abstract: No abstract text available
Text: J A E ELECTRONICS INC 21E D 7 40^34^5 G0004GÔ 2 • INSULATION DISPLACEMENT T Y P E-D *S P TYPE D*SP I DC TYPE Pin insert 0.374 9.5 0 .4 9 6 ( 1 2 .6 ) Before mating 0 .2 7 6 (7 ) 0.331 (8 .4 ) (3 .0 s ) 0.0 5 9 (1 .5 ) 0 .2 3 6 ( 6 . 0) S o ck et insert
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G0004GÃ
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J3L SMD DIODE
Abstract: 5962-87556012X 5962-8755601RX smd IQO 54ACT373 54ACT373DMQB SMD marking code iqo 54ACT373FMQB
Text: n REVISIONS LTR DOTE YR-MO-OA DESCRIPTION Add device type 02. Add vendor CAGE 01295. Add case o utlines L and 3. Change drawing CAGE code to 67268. Technical changes in 1 .4 , tab le I , and fig u re 3. E d ito ria l changes throughout._ _ _
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ACT373LMQB
M38510/75453B2X
5962-8755602LX
SNJ54ACT11373JT
5962-87556023X
SNJ54ACT11373FK
J3L SMD DIODE
5962-87556012X
5962-8755601RX
smd IQO
54ACT373
54ACT373DMQB
SMD marking code iqo
54ACT373FMQB
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DCMA-37S
Abstract: DCMA-37P DDMA50S DAMA-15S dbma-25s JIS-C-6367 DDMA-50S l0808
Text: J A E ELECTRONICS INC 40=134^5 G0Q0404 21E D s m -il-0 3 CRIMP CONTACT TYPE D'M A TYPE D*MA Type Crimp Contact Type D *M A -S ta n d a rd Shell D * M A F -S h e ll w ith F lo at M ounts S o c k e t insert 0 .3 9 4 10 0 .2 4 0 <6.o r ~*^(l0.8+0.8)r,— 0 .4 2 5 ± 0 .0 3 l
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G0Q0404
DAMA-15P-FO
DAMA-15S-FO
DBMA-25P-FO
DBMA-25S-FO
UL94V-0.
DCMA-37S
DCMA-37P
DDMA50S
DAMA-15S
dbma-25s
JIS-C-6367
DDMA-50S
l0808
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Untitled
Abstract: No abstract text available
Text: J A E ELECTRONICS INC aiE D '4fil34fc.S' 0000 434 3 I M F SHIELDING TYPE-D SUB "F” TYPE I DC TERMINATION D*SP “F” TYPE A - ¿ S '- < 2 7 The sheath on the flat ribbon cables does not have to be removed since insu lation displacement connectors are SelfPiercing. All conductors are terminated
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4fil34fc
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