JE340
Abstract: JE340G MJE340G je340 transistor je-340g to225 MJE340 transistor mje340g JE34 CASE 77
Text: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating
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MJE340
JE340
JE340G
MJE340G
je340 transistor
je-340g
to225
MJE340
transistor mje340g
JE34
CASE 77
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MJE340G
Abstract: No abstract text available
Text: MJE340G Plastic Medium-Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating
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MJE340G
MJE350
MJE340/D
MJE340G
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MJE340G
Abstract: No abstract text available
Text: MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating
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MJE340
MJE350
MJE340/D
MJE340G
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JE340
Abstract: JE340G MJE340G je340 transistor MJE340 to225 MJE340 datasheet je-340g transistor mje340g
Text: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating
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MJE340
MJE340/D
JE340
JE340G
MJE340G
je340 transistor
MJE340
to225
MJE340 datasheet
je-340g
transistor mje340g
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MJE340G
Abstract: No abstract text available
Text: MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating
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MJE340
MJE340/D
MJE340G
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MJE350
Abstract: MJE340
Text: PNP EPITAXIAL SILICON TRANSISTOR MJE350 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE340 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol
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MJE350
MJE340
O-126
MJE350
MJE340
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je340 transistor
Abstract: JE340
Text: PNP EPITAXIAL SILICON TRANSISTOR MJE350 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE340 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage
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MJE350
JE340
je340 transistor
JE340
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JE340
Abstract: je340 transistor je 340 je-340 MJE340 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high-voltage general purpose applications. • • Suitable for Transformerless, Line-Operated Equipment
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JE340
je340 transistor
je 340
je-340
MJE340 MOTOROLA
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JE340
Abstract: transistor m 1104 je340 transistor je340 to225aa MJE340 MOTOROLA je34
Text: MOTOROLA Order this document by MJE340/D SEMICONDUCTOR TECHNICAL DATA M JE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high-voltage general purpose applications. • • Suitable for Transformerless, Line-O perated Equipment
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MJE340/D
JE340
O-225AA
transistor m 1104
je340 transistor
je340 to225aa
MJE340 MOTOROLA
je34
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JE340
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220
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MJE340/T/SGS340
E350/T/SGS350
JE340,
MJE340T,
SGS340
O-125,
O-220
OT-82
JE350,
MJE350T,
JE340
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je340
Abstract: MJE340 je340 transistor MJE34 power transistor mje340 transistor MJE34 MJE340 b c e MJE340K je-340 AN-415
Text: MJE340 SILICO N MJE340K 0.5 A M PER E POWER T R A N SIST O R PLASTIC M E D IU M POWER NPN S ILIC O N T R A N SIST O R NPN SILIC O N 300 VOLTS 20.8 and 30 WATTS . designed for power output stages for television, radio, phonograph and other consumer product applications.
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MJE340
MJE340K
MJE340
MJE340K
NUE340K
E340K
je340
je340 transistor
MJE34 power transistor
mje340 transistor
MJE34
MJE340 b c e
je-340
AN-415
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MJE240
Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
Text: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250
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O-126
mje180
mje170
mje181
mje171
mje182
mje172
mje200
mje210
mje220
MJE240
MJE721
MJE720
MJE241
MJE700
MJE701
MJE702
MJE703
MJE800
MJE801
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JE340
Abstract: je340 transistor NT340 je-340
Text: TENTATIVE SPECIFICATION NEC SILICON POWER TRANSISTOR ELECTRON DEVICE N T340 HIGH VOLTAGE M ED IU M POWER NPN SILICON TRIPLE DIFFUSED TRANSISTOR DESCRIPTION Suitable for line-operated switching regulators and DC-DC converters. FEATURES • High Collector-Emitter Sustaining Voltage.
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JE340.
JE340
je340 transistor
NT340
je-340
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JE370
Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Text: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176
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O-126
2N4921
2N4922
2N4923
2N5190
2N5191
2N5192
2N5655
2N5656
2N5657
JE370
je243
je712
je240
je200
je253
JE703
JE350
je250
JE720
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Je 243
Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Text: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp
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O-225AA)
2N5655
BD157
2N5656
MJE803#
MJE703#
750/18k
BD681#
BD682#
JE210Â
Je 243
JE371
je240
JE171
JE340
transistor BD 341
bd189
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2M3055
Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047
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2N3055
2N3715
2N3716
2N3771
2M3772
2N3791
2N3792
2N4234
2N4398
2N4399
2M3055
B0W94C
mje520
2M5886
13007 hf
mj 13008
2n5337
IU 1047
tip120 pnp
BD908
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2N4401
2N5401
2N5551
2SA1004
2SA1010
2SA1013
2SA1015
2SA1016
2SA1017
2SA1019
2SC3133 cross reference
Hitachi 2sc281
NEC D882
A564A
D1163A
2sC1815 cross reference
a628a
krc1211
KRA2203
NEC D288
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MJE520
Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic
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-204AA
-204AE
T0-204A
97A-02
O-205AD
BUS51
BUV21
BUV11
2N6249
BUX41
MJE520
bd189
sc 6038
MJE12007
MOTOROLA 527 33A
mj4647
mje13006
BD 433NPNTO-126
Je105
mps-u
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27TfC
1N5438
tfc 5630
2N5161
germanium
2N4193
1N1319
A2023 transistor
2N217
1N5159
transistor bf 175
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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