JEDEC MO-153
Abstract: MO-153-BD-1 MO-153BD-1
Text: Plastic Packages for Integrated Circuits Thin Shrink Small Outline Plastic Packages TSSOP M38.173 N INDEX AREA E 0.25(0.010) M E1 2 INCHES GAUGE PLANE -B1 38 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-153-BD-1 ISSUE F) B M SYMBOL
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MO-153-BD-1
JEDEC MO-153
MO-153BD-1
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Q65110A7464
Abstract: LTW5SN NACH top mark smd 2U
Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Vorläufige Daten für OS-PCN-2009-034-A / Preliminary Data for OS-PCN-2009-034-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss
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OS-PCN-2009-034-A
OS-PCN-2009-034-A
Q65110A7464
LTW5SN
NACH
top mark smd 2U
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LBW5SM
Abstract: LTW5SM
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis
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W5SM-JYKY
Abstract: LBW5SM LTW5SM
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis
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Untitled
Abstract: No abstract text available
Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA bis zu
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D-93055
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LD W5SN-1U2V-35
Abstract: Q65110A7901 bare die
Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und
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D-93055
LD W5SN-1U2V-35
Q65110A7901
bare die
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ltw5sm
Abstract: LD W5SM W5SM-JYKY-25
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss
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OS-PCN-2009-033-A/
OS-PCN-2009-033-A
ltw5sm
LD W5SM
W5SM-JYKY-25
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LTW5SN
Abstract: smd 2U 73 diode Q65110A9211
Text: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LD W5SN, LB W5SN, LT W5SN Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 692 mW (tief blau); 45 lm (blau); 126 lm (true grün) bei 700 mA und
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LTW5SM
Abstract: W5SM-JYKY White LED silicone OSRAM Q65110A8417
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Released Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 412 mW (tief blau); 25 lm (blau); 81 lm (true grün) bei 350 mA und bis
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D-93055
LTW5SM
W5SM-JYKY
White LED silicone OSRAM
Q65110A8417
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LTW5SM
Abstract: No abstract text available
Text: Golden DRAGON Lead Pb Free Product - RoHS Compliant LD W5SM, LB W5SM, LT W5SM Vorläufige Daten für OS-PCN-2009-033-A/ Preliminary Data for OS-PCN-2009-033-A Besondere Merkmale Features • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss
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OS-PCN-2009-033-A/
OS-PCN-2009-033-A
LTW5SM
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Untitled
Abstract: No abstract text available
Text: February 1984 Revised February 1999 S E M I C O N D U C T O R TM MM74HCT00 Quad 2 Input NAND Gate General Description The M M 74H C T00 is a NAND gates fabricated using advanced silicon-gate C M OS technology w hich provides the inherent benefits of C M OS— low quiescent power and
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MM74HCT00
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74LS
Abstract: M14A M14D MM74HCT00 MM74HCT00M MM74HCT00MTC MM74HCT00SJ MTC14 md-153 bcs 47
Text: Revised February 1999 E M IC O N D U C T G R T M MM74HCT00 Quad 2 Input NAND Gate General Description T he M M 74H C T00 is a NAND gates fabricated using advanced silicon-gate C M OS technology which provides the inherent benefits of C M OS— low quiescent pow er and
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MM74HCT00
MM74HCT00
MM74HCT
74LS
M14A
M14D
MM74HCT00M
MM74HCT00MTC
MM74HCT00SJ
MTC14
md-153
bcs 47
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Untitled
Abstract: No abstract text available
Text: A S E M I R I C C O N H D U I L D C T O Revised February 1999 R TM MM74HC04 Hex Inverter are protected from dam age due to static discharge by inter nal diode clam ps to V qq and ground. General Description The M M 74H C 04 inverters utilize advanced silicon-gate
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MM74HC04
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MM74HC*4050m
Abstract: 0-15V 74HC CD4049BC CD4050BC M16A MM74HC4049 MM74HC4049M MM74HC4050
Text: Revised O ctober 1999 SEMICONDUCTOR TM MM74HC4049 • MM74HC4050 Hex Inverting Logic Level Down Converter Hex Logic Level Down Converter General Description The M M 74H C 4049 and the M M 74H C 4050 utilize advanced silicon-gate C M O S technology, and have a m od
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MM74HC4049
MM74HC4050
MM74HC4049
MM74HC4050
MM74HC*4050m
0-15V
74HC
CD4049BC
CD4050BC
M16A
MM74HC4049M
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Untitled
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 E M IC O N D U C T G R T M MM74HC14 Hex Inverting Schmitt Trigger General Description Features The M M 74H C 14 utilizes advanced silicon-gate C M OS technology to achieve the low pow er dissipation and high noise im m unity of standard C M O S, as well as the capability
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MM74HC14
MM74HC14
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MM74HC14M
Abstract: MM74HC14 74HC 74LS M14A M14D MM74HC14MTC MM74HC14SJ MTC14
Text: S e p te m b e r 19 8 3 R e v is e d F e b ru a ry 1999 E M IC O N D U C T G R T M MM74HC14 Hex Inverting Schmitt Trigger General Description Features T he M M 74H C 14 utilizes advanced silicon-gate C M OS technology to achieve the low pow er dissipation and high
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MM74HC14
MM74HC14
MM74HC14M
74HC
74LS
M14A
M14D
MM74HC14MTC
MM74HC14SJ
MTC14
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74HCT05
Abstract: No abstract text available
Text: Revised February 1999 S E M IC O N D U C T O R TM General Description The MM74HCT05 is a logic function fabricated by using advanced silicon-gate CMOS technology, which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. The device is also input and out
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MM74HCT05
MM74HCT05
DM74LS
MM74HCT
74HCT05
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Untitled
Abstract: No abstract text available
Text: Revised April 1999 E M I C Q N D U C T G R tm General Description Features The MM74HCT14 utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well as the capability to drive 10 LS-TTL loads.
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MM74HCT14
MM74HCT14
74HCT
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MM74HCT74
Abstract: 74HCT 74LS M14A M14D M74HCT74MTC MM74HCT74M MM74HCT74SJ
Text: Revised January 1999 E M IC O N D U C T G R T M MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. T he M M 74H C T74 utilizes advanced silicon-gate C M OS
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MM74HCT74
MM74HCT74
74HCT
74LS
M14A
M14D
M74HCT74MTC
MM74HCT74M
MM74HCT74SJ
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MM74HC08
Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate
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MM74HC08
MM74HC08
74HC
74LS
HC08
M14A
M14D
MM74HC08M
MM74HC08MTC
MM74HC08SJ
diagram LG TV circuits
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burp
Abstract: 74HCT00
Text: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output
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MM74HCT00
MM74HCT
burp
74HCT00
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74HCT
Abstract: M20D MM74HCT273 MM74HCT273MTC MS-013 MTC20
Text: Revised February 1999 E M IC O N D U C T G R T M MM74HCT273 Octal D-Type Flip-Flop with Clear General Description All inputs to this device are protected from dam age due to electrostatic discharge by diodes to Vc c and ground. T he M M 74H C T273 utilizes advanced silicon-gate C M OS
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MM74HCT273
MM74HCT273
MM74HCT
74HCT
M20D
MM74HCT273MTC
MS-013
MTC20
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MM74HC04M
Abstract: 74HC 74LS M14A M14D MM74HC04 MM74HC04MTC MM74HC04SJ MTC14
Text: s e m ic o n d u c t o r Revised February 1999 MM74HC04 Hex Inverter General Description are protected from dam age due to static discharge by inter nal diode clam ps to V qq and ground. T he M M 74H C 04 inverters utilize advanced silicon-gate C M O S technology to achieve operating speeds sim ilar to
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MM74HC04
MM74HC04M
74HC
74LS
M14A
M14D
MM74HC04MTC
MM74HC04SJ
MTC14
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74HCT74N
Abstract: No abstract text available
Text: Revised January 1999 EMICQNDUCTGR tm MM74HCT74 Dual D-Type Flip-Flop with Preset and Clear General Description tected from dam age due to static discharge by internal diode clam ps to Vc c and ground. The M M 74H C T74 utilizes advanced silicon-gate CM OS
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MM74HCT74
74HCT74N
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