ansi-y14.5m-1994
Abstract: MO-187
Text: Package Information Vishay Siliconix MSOP: 8-LEADS POWER IC ONLY JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 N N-1 A B C 0.20 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 0.60 N/2 0.08 M C B S b Top View A S
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MO-187,
28-Jan-04
S-40080--Rev.
02-Feb-04
ansi-y14.5m-1994
MO-187
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5922
Abstract: 72817 ansi-y14.5m-1994 MO-187 JEDEC MO-187 aa MO-187-AA Package
Text: Package Information Vishay Siliconix MSOP: 10-LEADS POWER IC ONLY JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 N N-1 A B C 0.20 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 0.60 N/2 0.08 M C B S b Top View
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10-LEADS
MO-187,
28-Jan-04
S-40082--Rev.
02-Feb-04
5922
72817
ansi-y14.5m-1994
MO-187
JEDEC MO-187 aa
MO-187-AA Package
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5867
Abstract: 71244 ansi-y14.5m-1994 MO-187 JEDEC MO-187 ba JEDEC MO-187 Variation BA mo187 MO-187-AA Package
Text: Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, Variation AA and BA (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating
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MO-187,
012imension:
T-02080--Rev.
15-Jul-02
12-Jul-02
5867
71244
ansi-y14.5m-1994
MO-187
JEDEC MO-187 ba
JEDEC MO-187 Variation BA
mo187
MO-187-AA Package
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ansi-y14.5m-1994
Abstract: MO-187 10-LEADS JEDEC MO-187 Variation BA B.A BSc
Text: Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, Variation AA and BA (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating
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10-LEADS
MO-187,
12-Jul-02
T-02080--Rev.
15-Jul-02
ansi-y14.5m-1994
MO-187
10-LEADS
JEDEC MO-187 Variation BA
B.A BSc
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D006 CMD
Abstract: DN006 15KV IEC1000-4-2
Text: PAC DN006 CALIFORNIAMICRO MICRODEVICES DEVICES CALIFORNIA 6 CHANNEL ESD PROTECTION ARRAY Features Six channels of ESD protection 15KV ESD protection HBM 8KV contact, 15KV air ESD protection per IEC 1000-4-2 Low loading capacitance, 3 pF typ.
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DN006
DN006
UL94V-0
500mW
C0240298D
D006 CMD
15KV
IEC1000-4-2
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TLV2252
Abstract: TLV2252AID TLV2254 TLV2432 TLV2442
Text: TLV225x, TLV225xA Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS SLOS185C – FEBRUARY 1997 – REVISED – MARCH 2001 D D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ
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TLV225x,
TLV225xA
SLOS185C
TLV2252
TLV2252AID
TLV2254
TLV2432
TLV2442
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MT5VDDT872HG-26A
Abstract: PC2100
Text: ADVANCE‡ 64MB, 128MB x72 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT5VDDT872H, MT5VDDT1672H For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)
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128MB
200-PIN
MT5VDDT872H,
MT5VDDT1672H
200-pin,
PC1600
PC2100
16X72HG
MT5VDDT872HG-26A
PC2100
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB x64 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT4VDDT864H (64MB) MT4VDDT1664H (128MB) For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (MO 224) • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)
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128MB
200-PIN
200-pin,
PC1600
PC2100
16X64HG
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Untitled
Abstract: No abstract text available
Text: 64MB, 128MB x64 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT4VDDT864H (64MB) MT4VDDT1664H (128MB) For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (MO 224) • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)
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128MB
200-PIN
200-pin,
PC1600
PC2100
16X64HG
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SS-199
Abstract: No abstract text available
Text: 64MB, 128MB x64 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT4VDDT864H (64MB) MT4VDDT1664H (128MB) For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (MO 224) • JEDEC standard 200-pin, small-outline, dual inline memory module (DDR SODIMM)
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128MB
200-PIN
MT4VDDT864H
MT4VDDT1664H
128MB)
200-pin,
PC1600
PC2100
SS-199
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Untitled
Abstract: No abstract text available
Text: 0: 30 PM PM8355 QuadPHY II Datasheet Released Mo nd ay ,0 QuadPHY® II 9M ay ,2 00 5 11 :3 PM8355 d of ag er rt on Four Channel 2.125-3.125 Gbits/s SERDES by sa tis h Datasheet Do wn lo ad ed Proprietary and Confidential Released Issue 7: June 2003 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use
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PM8355
PMC-2000920,
PM8355
PMC-2000920
US6316977
US6552619
17x17
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Untitled
Abstract: No abstract text available
Text: 9: 07 PM PM8355 QuadPHY II Datasheet Released ug Mo nd ay ,0 1A QuadPHY® II us t, 20 05 10 :1 PM8355 rtm in er In co n Four Channel 2.125-3.125 Gbits/s SERDES Proprietary and Confidential Released Issue 8: July 2005 Do wn lo ad ed by C on te n tT ea m of
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PM8355
PMC-2000920,
PM8355
MO-205,
17x17
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Untitled
Abstract: No abstract text available
Text: 128MB, 256MB, 512MB, 1GB x72 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT9VDDT1672PH, MT9VDDT3272PH, MT18VDDT6472PH, MT9VDDT6472PH, MT18VDDT12872PH For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES
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128MB,
256MB,
512MB,
200-PIN
MT9VDDT1672PH,
MT9VDDT3272PH,
MT18VDDT6472PH,
MT9VDDT6472PH,
MT18VDDT12872PH
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MT9VDDT1672PHG-265
Abstract: PC2100 MA-405 6571
Text: 128MB, 256MB, 512MB, 1GB x72 200-PIN DDR SDRAM SODIMMs SMALL-OUTLINE DDR SDRAM MODULE MT9VDDT1672PH, MT9VDDT3272PH, MT18VDDT6472PH, MT9VDDT6472PH, MT18VDDT12872PH For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES
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128MB,
256MB,
512MB,
200-PIN
MT9VDDT1672PH,
MT9VDDT3272PH,
MT18VDDT6472PH,
MT9VDDT6472PH,
MT18VDDT12872PH
MT9VDDT1672PHG-265
PC2100
MA-405 6571
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Untitled
Abstract: No abstract text available
Text: ST72321B 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and
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ST72321B
64/44-pin
ST72F321BJ9T3
ST72321BJ9
ST72321B
\TEMP\SGST\ST72F321BJ9T3
21-Aug-2007
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log sr2 1234
Abstract: ST7232x
Text: ST72321B 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and
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ST72321B
64/44-pin
ST72F321BAR9T3
ST72321BAR9
ST72321B
log sr2 1234
ST7232x
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Untitled
Abstract: No abstract text available
Text: ST72321B 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and
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ST72321B
64/44-pin
ST72F321BR9T3
ST72321BR9
ST72321B
\TEMP\SGST\ST72F321BR9T3
21-Aug-2007
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MO-187
Abstract: R005 JEDEC MO-187
Text: R E V I S I O N S REV A D E S C R 1P T I O N RELEASE TO DOC U ME NT E.C. M . DATE BY/APP'D 1262 11/18/2003 H R//TLSN CONTROL [ 1 . 85] 8X .040 — [ 1.02] ( 8X .016 ) [ 0 . 41] ( 6X .026 ) [0.65] RECOMMENDED LAND PATTERN NOTES: UNLESS OTHERWI SE SPECIFIED
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OCR Scan
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MO-187,
MO-187
R005
JEDEC MO-187
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Untitled
Abstract: No abstract text available
Text: Revised February 1999 E M IC O N D U C T G R T M General Description The 74HC423A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technology. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high noise
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OCR Scan
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PDF
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74HC423A
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CX20187
Abstract: MM74HC423AM 74hc423a 74HC M16A M16D MM74HC423A MM74HC423AMTC MM74HC423ASJ MTC16
Text: Revised February 1999 E M IC O N D U C T G R T M General Description T he 7 4H C 423A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S technology. T h e y feature speeds com parable to low pow er Schottky T T L circuitry w hile retaining the low pow er and high noise
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MM74HC423A
74HC423A
MM74HC423A
CX20187
MM74HC423AM
74HC
M16A
M16D
MM74HC423AMTC
MM74HC423ASJ
MTC16
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74hc123a
Abstract: No abstract text available
Text: September 1983 Revised February 1999 E M IC O N D U C T G R T M General Description The MM74HC123A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technol ogy. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high
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OCR Scan
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PDF
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MM74HC123A
74hc123a
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74HC
Abstract: M16A M16D MM74HC123A MM74HC123AM MM74HC123AMTC MM74HC123ASJ MTC16
Text: Revised February 1999 E M IC O N D U C T G R T M General Description T he M M 74H C 123A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S te ch n ol ogy. T h e y feature speeds com parable to low pow er Schottky TTL circuitry w hile retaining the low pow er and high
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OCR Scan
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PDF
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MM74HC123A
MM74HC123A
MM74H
74HC
M16A
M16D
MM74HC123AM
MM74HC123AMTC
MM74HC123ASJ
MTC16
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74HC123AN
Abstract: 74HC123AM 74HC123A
Text: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M IC O N D U C T O R TM General Description p u t p u ls e e q u a tio n is s im p ly : P W = R e x t ( ^ e x t ) ! w h e re The M M 74H C 123A high speed m onostable m ultivibrators (one shots) utilize advanced silicon-gate C M OS te ch n ol
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MM74HC123A
MM74HC123A
74HC123AN
74HC123AM
74HC123A
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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