Q65110A8160
Abstract: No abstract text available
Text: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente
|
Original
|
PDF
|
3500K)
24-mm
200/Rolle,
1200/Rolle,
Q65110A8160
|
smd code book 9u
Abstract: abe 433 smd transistor cy
Text: Golden DRAGON Plus Lead Pb Free Product - RoHS Compliant LCW W5AM Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klare Silikonlinse, Chip level conversion • Typischer Lichtstrom: 85 lm bei 350 mA und bis zu 203 lm bei 1 A (3500K) • Besonderheit des Bauteils: hocheffiziente
|
Original
|
PDF
|
3500K)
24-mm
200/Rolle,
1200/Rolle,
smd code book 9u
abe 433
smd transistor cy
|
lcw w5ap
Abstract: abe 433 smd code book 9u OHA03621 smd transistor cy w5ap
Text: Diamond DRAGON Lead Pb Free Product - RoHS Compliant LCW W5AP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: schwarzes SMD-Gehäuse, farbloser klarer Silikon-Verguss, Silikon-Linse; Chip level conversion • Typischer Lichtfluss: 203 lm bei 1400 mA
|
Original
|
PDF
|
24-mm
lcw w5ap
abe 433
smd code book 9u
OHA03621
smd transistor cy
w5ap
|
diode 107 10K 501
Abstract: G103 G003 G101 G102 32MHz quartz RESONATOR amd IC amplifier G701 11nQ
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
|
Original
|
PDF
|
200kHz
250mA
exter9-6135-9292-0
diode 107 10K 501
G103
G003
G101
G102
32MHz quartz RESONATOR
amd IC amplifier
G701
11nQ
|
G003
Abstract: G008
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER Rev A1, Page 1/10 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200 kHz Laser diode driver of up to 250 mA Averaging control of laser power
|
Original
|
PDF
|
SO16N
G003
G008
|
Untitled
Abstract: No abstract text available
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
|
Original
|
PDF
|
200kHz
250mA
|
Untitled
Abstract: No abstract text available
Text: SN54CBT16209, SN74CBT16209A 18ĆBIT FET BUSĆEXCHANGE SWITCHES SCDS006O − NOVEMBER 1992 − REVISED NOVEMBER 2004 D Members of the Texas Instruments D D SN54CBT16209 . . . WD PACKAGE SN74CBT16209A . . . DGG, DGV, OR DL PACKAGE TOP VIEW Widebus Family
|
Original
|
PDF
|
SN54CBT16209,
SN74CBT16209A
18BIT
SCDS006O
SN54CBT16209
SN74CBT16209A
SN54CBT16209
18-bit
|
AS7C1024
Abstract: AL205 AS7C31024 IN317
Text: Hi gh Per for m an ce 128K 128 K x8 C M OS S R A M A S 7C1024 A S 7C31024 1288K ×8 CMOS S R A M 12 Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption
|
Original
|
PDF
|
7C1024
7C31024
32-pin
7C512
AS7C1024
AL205
AS7C31024
IN317
|
Untitled
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC151 8-Channel Digital Multiplexer General Description The M M74HC151 high speed D igital m ultiplexer utilizes advanced silicon-gate C M O S technology. Along w ith the high noise im m unity and low pow er dissipation of standard
|
OCR Scan
|
PDF
|
MM74HC151
M74HC151
MM74HC151
|
S0010
Abstract: No abstract text available
Text: Revised February 1999 SEMICONDUCTOR TM MM74HC151 8-Channel Digital Multiplexer General Description The MM74HC151 high speed Digital m ultiplexer utilizes advanced silicon-gate C M OS technology. Along w ith the high noise im m unity and low pow er dissipation of standard
|
OCR Scan
|
PDF
|
MM74HC151
S0010
|
Untitled
Abstract: No abstract text available
Text: HN28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Fiash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le o f in -syste m e le ctrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
PDF
|
HN28F101
HN28F101:
|
74hc157m
Abstract: No abstract text available
Text: S E M I C O N D U C T O R Revised February 1999 TM MM74HC157 Quad 2-Input Multiplexer General Description T h e M M 74H C 157 high speed Q uad 2-to-1 Line data selecto r/M ultiplexers utilizes advanced silicon-gate CM OS te ch nology. It possesses the high noise im m unity and low
|
OCR Scan
|
PDF
|
MM74HC157
74hc157m
|
Untitled
Abstract: No abstract text available
Text: A I R EM I C O C H S eptem ber 1983 I L D N D U G Revised February 1999 T O R TM MM74HC139 Dual 2-To-4 Line Decoder equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and General Description The M M 74H C 139 deco d e r utilizes advanced silicon-gate
|
OCR Scan
|
PDF
|
MM74HC139
74LS139.
MM74HC139
|
fototransistor BPW 39
Abstract: BPW39 visible phototransistor
Text: BPW39 Silizium-NPN-Epitaxial-Planar-Fototransistor Silicon NPN Epitaxial Planar Phototransistor Anwendung: Application: Em pfänger in elektronischen Steuer- und R egeleinrichtungen D etector in e lectronic co n tro l and drive circuits Besondere Merkmale:
|
OCR Scan
|
PDF
|
BPW39
5033/1EC
BPW39
fototransistor BPW 39
visible phototransistor
|
|
|
Untitled
Abstract: No abstract text available
Text: Revised February 1999 EMICONDUCTGRTM MM74HC174 Hex D-Type Flip-Flops with Clear General Description The M M 74H C 174 edge triggered flip-flops utilize advanced silicon-gate C M O S technology to im plem ent D -type flipflops. T h e y possess high noise im m unity, low power, and
|
OCR Scan
|
PDF
|
MM74HC174
MM74HC174
|
Untitled
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM General Description The M M 74H C 245A 3-STATE bidirectional buffer utilizes advanced silicon-gate C M O S technology, and is intended for tw o-w ay asynchronous com m unication between data buses. It has high drive current outputs w hich enable high
|
OCR Scan
|
PDF
|
|
74HC139M
Abstract: 74hc139n
Text: A s e m I R C i c o n H d u S eptem ber 1983 I L D Revised February 1999 c t o r MM74HC139 Dual 2-To-4 Line Decoder equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and General Description The M M 74H C 139 deco d e r utilizes advanced silicon-gate
|
OCR Scan
|
PDF
|
MM74HC139
74HC139M
74hc139n
|
Untitled
Abstract: No abstract text available
Text: Revised February 1999 E M IC O N D U C T G R T M General Description The 74HC423A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technology. They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and high noise
|
OCR Scan
|
PDF
|
74HC423A
|
MX23256
Abstract: MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640
Text: MACRONIX 34Ê INC MX23256/57 D • 5bööööE DDQD17Q 3 .EVI p r e l im in a r y 3 2 ,7 6 8 X 8 STATIC READ ONLY MEMORY T ^ - g - is FEATURES DESCRIPTION . 32,768 X 8-bit organization . Access time - 150 ns max . Current-Operating; 80 mA max Standby: 20 mA max
|
OCR Scan
|
PDF
|
DDQD17Q
MX23256/57
28-pin
MX23256
MX23257
MX23256/57
000sq.
MX23256-15PC
27256 EPROM
25256
tny 178
tm 1640
|
A03404
Abstract: No abstract text available
Text: HM67S18258 Series 262,144-words x 18-bits Synchronous Fast Static RAM HITACHI ADE-203-661A Z Product Preview Rev. 1 Feb. 21 ,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write
|
OCR Scan
|
PDF
|
HM67S18258
144-words
18-bits
ADE-203-661A
M67S18258BP-7
BP-119)
67S18256BP
A03404
|
Untitled
Abstract: No abstract text available
Text: Revised March 1999 S E M I C O N D U C T O R TM 74LVX125 Low Voltage Quad Buffer with 3-STATE Outputs General Description Features The LVX125 contains fo u r independent non-inverting buff ers with 3-STATE outputs. The inputs tolerate voltages up to 7V allow ing th e interface of 5V system s to 3V system s.
|
OCR Scan
|
PDF
|
74LVX125
LVX125
74LVX125M
74LVX125SJ
MTC14
14-Lead
|
74hc595n
Abstract: 74HC595M 74hc595w MM74HC595N M74HC595N logic ic 7476 pin diagram
Text: „ r Revised February 1999 SEMICONDUCTOR TM MM74HC595 8-Bit Shift Registers with Output Latches General Description The M M 74H C 595 high speed shift register utilizes advanced silicon-gate C M OS technology. This device pos sesses the high noise im m unity and low pow er consum p
|
OCR Scan
|
PDF
|
MM74HC595
74hc595n
74HC595M
74hc595w
MM74HC595N
M74HC595N
logic ic 7476 pin diagram
|
74HC595N
Abstract: No abstract text available
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC595 8-Bit Shift Registers with Output Latches General Description The M M 74H C 595 high speed shift register utilizes advanced silicon-gate C M O S technology. This device pos sesses the high noise im m unity and low pow er consum p
|
OCR Scan
|
PDF
|
MM74HC595
74HC595N
|
74hc259n
Abstract: 74HC259M
Text: „ r Revised February 1999 SEMICONDUCTOR TM MM74HC259 8-Bit Addressable Latch/3-to-8 Line Decoder General Description The M M 74H C 259 device utilizes advanced silicon-gate C M OS technology to im plem ent an 8-bit addressable latch, designed fo r general purpose storage a pplications in digital
|
OCR Scan
|
PDF
|
MM74HC259
74hc259n
74HC259M
|
