Untitled
Abstract: No abstract text available
Text: DBI 15 KN<YS KNNY KKNY< $P W JF 8 E^- W ZF ABG B, C N,/1 K >@@ M@@ ¥@@ J>@@ K JM@ >¥@ F?@ ¥@@ ^95*% PH$ JF2@> PH$ JF2@M PH$ JF2@¥ PH$ JF2J> TU _ @S>> @SMZ J JSF J?@@ J@@@ PH$ JF2J? Symbol Conditions Values Units $P ^( W M` ABS VJ[J>@S 1( 63(' -&&'/1; ^( W M` ABS -0(%%/%>G
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SiRFLive User Manual
Abstract: GSD4e 0/SIRF NMEA Reference Manual Revision 2.1
Text: JF2 EVK User Manual 1vv0300987 Rev.1 – 2012-11-16 JF2 EVK User Manual 1vv0300987 Rev.1 – 2012-11-16 APPLICABILITY TABLE PRODUCT JF2 Reproduction forbidden without written authorization from Telit Communications S.p.A. - All Rights Reserved. Mod. 0809 2011-07 Rev.2
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1vv0300987
SiRFLive User Manual
GSD4e
0/SIRF NMEA Reference Manual Revision 2.1
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Untitled
Abstract: No abstract text available
Text: JUPITER JF 2 11 mm GPS Module GPS GPS Embedded Embedded 2.6 mm 11 mm Product Description Family Concept The JF2 offers developers and integrators the smallest, completely integrated GNSS solution for positioning applications based on a 1.8 V supply. It is fully interoperable with
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Untitled
Abstract: No abstract text available
Text: JUPITER JN 3 12.2 mm GPS Module GPS GPS Embedded Embedded 2.4 mm 16 mm Product Description • LCC package allows manual soldering/rework The JN3 is the companion module to JF2. It employs LCC packaging and a 3 V power supply and is interoperable with Telit cellular modules providing ready-to-use solution
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GL865
SL869
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PA 66 GF 15
Abstract: pa 66 gf data sheet of 7400 Series TTL ELJPA1R0MF ZF 4,7 40 085 56 ELJF ELJFB331K/JF ELJPF5N6DF ELJRE15NJ/GF2
Text: Chip Inductors Japan Chip Inductors Series: Type: Chip RG, RF, RE, NJ, ND, NC, NA, NK, FJ, FC, FA, FB, SA,PF, PE, PC, PA, PB, EA, QF, QE RG size 0603 1F (size 1005) 1E (size 1608) 1J (size 1608) 1C (size 2520) 1A (size 3225) 1B (size 4532) ND (size 2012)
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ELJEA220KF
ELJEA330KF
ELJEA470KF
ELJEA680KF
ELJEA101KF
ELJEA151KF
ELJEA221KF
ELJEA331KF
PA 66 GF 15
pa 66 gf
data sheet of 7400 Series TTL
ELJPA1R0MF
ZF 4,7
40 085 56
ELJF
ELJFB331K/JF
ELJPF5N6DF
ELJRE15NJ/GF2
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E5387-68701
Abstract: smd wv5 schematic usb to spi adapter Aardvark LM98640QML aardvark i2c J500-ND LM9864W-MPR Capacitor SMD j106 LM98640 LM98640CVAL
Text: LM98640CVAL Evaluation Board User’s Guide LM98640QML Dual Channel Analog Front End Evaluation Board Copyright 2009 National Semiconductor Corporation LM98640QML Evaluation Board User’s Guide September 2009 Revision 1.0 LM98640CVAL EVALUATION BOARD USER’S GUIDE – TABLE OF CONTENTS
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LM98640CVAL
LM98640QML
2000/XP
E5387-68701
smd wv5
schematic usb to spi adapter Aardvark
aardvark i2c
J500-ND
LM9864W-MPR
Capacitor SMD j106
LM98640
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e3587
Abstract: LM98640
Text: LM98640CVAL Evaluation Board User’s Guide LM98640QML Dual Channel Analog Front End Evaluation Board Copyright 2009 National Semiconductor Corporation LM98640QML Evaluation Board User’s Guide September 2009 Revision 1.0 LM98640CVAL EVALUATION BOARD USER’S GUIDE – TABLE OF CONTENTS
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LM98640CVAL
LM98640QML
e3587
LM98640
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PT100 table
Abstract: FPT100 Pt100 0-50mV DC12N UDC100 3-DIGIT DISPLAY DC11T
Text: 51-51-16U-64 Issue 9 Page 1 of 2 UDC100 Digital Controller Model Selection Guide Instructions Select the desired key number. The arrow to the right marks the selection available. Make one selection each from Table I thru III using the column below the proper arrow.
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51-51-16U-64
UDC100
DC10N
DC10D
DC11A
UDC100
PT100 table
FPT100
Pt100
0-50mV
DC12N
3-DIGIT DISPLAY
DC11T
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2SC2410
Abstract: 2SC2410S 2sc241
Text: ROHM CO LTD 4 GE D 7 ûBflïm m h 7 > V ^ $ / T ransistors — . 2SC2410 Q 0 0 S 711 1 SRHM 2SC2410/2SC241 OS — '7 - 3 1 - / 7 y U ^ > h 7 > v 7 5 ! Amplifier Epitaxial Planar NPN Silicon Transistors lO ^ • #JF2 \H £ |S I/'D im e n s io n s Unit : mm
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2SC2410/2SC241
2SC2410
10-5J
100mA
8x10-5
100mA
2SC2410S
SC-43
2SC2410S
2sc241
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Untitled
Abstract: No abstract text available
Text: 2SC4275 '& ± '< T7 - Y ? > i> X 9 N P N = M Ì£ ÌS [ 7 V — + Jf2 TRIPLE D IFFUSED PLANER TYPE *W E . * * * < < * • > * * HIGH VOLTAGE. HIGH SPEED SWITCHING : O utline Draw ings 2.0 Features • ffl High speed sw itching Low saturation voltage • S t !H it
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2SC4275
SC-65
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jh51
Abstract: r390 2SC4275 30S3 SC-65 T151 T930
Text: 2SC4275 '& ± '< T7 -Y ? > i> X 9 N P N = M Ì£ ÌS [ 7 V — + Jf2 TRIPLE D IFFUSED PLANER TYPE *W E . * * * < < * • > * * HIGH VOLTAGE. HIGH SPEED SWITCHING : O utline Draw ings 2.0 Features • ffl High speed sw itching Low saturation voltage • S t !H it
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2SC4275
SC-65
4i-i23i
I95t/R89)
jh51
r390
2SC4275
30S3
SC-65
T151
T930
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Untitled
Abstract: No abstract text available
Text: 4 0E ROHM CO LTD hÿ T Û S Ô 'm D OÛDSSTO 4 HRHM 2SB1212 £ /Transistors " 7=27-/ ? X £ 0$ * y y J i s 7 ° l s - ± M P N P V ' j : \ > V y > v 7 , ^ 4,1 :ftÍH1ÍSÜ/Med¡um Power Amp. Epitaxial Planar PNP Silicon Transistor • ¿i-Jf2\t'}£I§]/'0imensions Unit : mm
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2SB1212
-160V
-160V
2SD1812.
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2SD11
Abstract: 2SD118
Text: ROHM CO 40E LTD TÔ EÔ 'm D DGGSSOG T BSRHM 2SB891 h 7 > y ’ X $ / I ransistors 7 ^3 3 -i 7 *g I f c f ^ V T ^ l ^ U - ^ P N P '> « ;= !> h 7 > V ^ ^ i & ü ^ ^ j i i 1Îiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • i1 -Jf2 \f> ill/D im e n sio n s Unit : mm
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2SB891
--32V,
2SD11
2SD1189
2SD118
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Untitled
Abstract: No abstract text available
Text: h 7 > V ^ ^ / T ransistors 2SD1855 H S t £ i f t 7 ° b - ^ B N P N ‘> U 3 > h 7 > y 7 $ 2S D 18 5 5 fiU i j£ il:fri§ li Iffl/L o w Freq. Power Amp. Triple Deffused NPN Silicon Transistor s i> > J V ;V g i-r • #Jf2\)i£|S<]/'Dimensions U n it: mm)
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2SD1855
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rohm 2sd1664
Abstract: No abstract text available
Text: / T ransistors 2SD1664 2SD 1664 JL\£$*cV7 V7°\s—f B '>>;=!> NPN /Medium Power Amp. Epitaxial Planar NPN Silicon Transistor • £ -Jf2\T >£ll/D im ensions (U n it: mm) • 1) Pc = 2 W T < fc § (4 0 X 4 0 X 0 .7 m m -b 7 5 7 7 * IS 1 )„ 2) Low V Ce ( sai ) = 0.15V (Typ.)
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2SD1664
500mA
40X40X0
500mA)
2SB1132.
iU74r-iS7?
rohm 2sd1664
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Untitled
Abstract: No abstract text available
Text: ELD1 1 2 0 5 /'J—X ELD 1120 Series T a 25°C lii6 i i ^ $ t & / A b s o l u t e M a x im u m R ating li+Jf2 \l";£ l§ l/O u tlin e d raw in g IIS /It e m iB ^/S ym bol 3S§/Rating ^ C l/U n it Vdd 6 V Pd 100 mW •sBWE/rviop'i' voitae? t I Dij-ip.itiiin
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2SB889
Abstract: 2sd1200
Text: h 7 > y 7.£ / T ransistors ROHM CO LTD m iE D H 7f l E a m DDDSfl3 a 2 I t f $ ^ y 7 ; U 7 ° U - ^ N P N 2 z m . 2SD1200 • RHN — b ? > y Z $ Freq. Power Amp. 7 ~J3-0^~ Epitaxial Planar NPN Silicon Transistor • i4 - Jf2 \f$ ill/D im e n sio n s U n it: mm
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2SD1200
2SB889.
2SB889
2sd1200
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1036K
Abstract: A1036K c4097 2411K transistors 2SA 1036k
Text: b ~ 7 > y 7 k£ /T ra n s is to rs 2S A 1036K /2S A 1577 2SA 1036K 2SA 1577 P N P y ' J - 1 > h4 | i | ^ J i i lH f f l/ M e d iu m P o w e r A m p . Epitaxial Planar Super/Ultra Mini-Mold PNP Silicon Transistors • Mk 1 • ^Jf2\l';i|2|/'Dim ensions Unit : mm)
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1036K
2SA1036K
2411K
500mA
2SC4097.
A1036K
c4097
transistors 2SA 1036k
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transistor Bf 444
Abstract: L4Z marking S6111 MARKING JM transistor EKs 5001FE ab 4455
Text: h SEC ^ ì ? / t C o m Ÿ 1 * X p o u n d T r a n s is t o r GA1 L4Z f â i i t F*9 l e N P N X f c : ? 4 - ^ 7 ^ Jf2 5 ^ 'J 3 > X ? 4>iÎÆ^'T-y51>^ !» # .{È i t : mm o / M T X tS fit è f*3j%l T v>i f , CRi =47 kQ ) o G N 1 L 4 Z ! : 3 > 7 , | l / > 7 1) - ü t t JS T - ë â 1 " „
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Untitled
Abstract: No abstract text available
Text: ASSMANN Terminal Blocks Electronic C om ponen ts ASH-10 Series Pitch 10mm Specification B A R R IER MATERIAL: T H ER M O PLA ST IC UL 94V-0 , BLACK TERM INALS: TIN PLATED B R A S S SC REW S: NICKEL PLATED ST E E L W IRE RA N G E AWG: 14-18 STR. RATING: 15 A M P E R E S, 300 VAC
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ASH-10
500MQ
ASH-101
ASH-102
ASH-104
ASH-105
ASH-106
ASH-107
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cable amplifier OPA
Abstract: C1185
Text: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC6505 D i f f e r e n t i a l IF F r o n t - E n d Description • • • • • • • • • • The RC6505 incorporates IF gain stages, reference generators and a crystal oscillator on a single chip. The high
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RC6505
80MHz
24-lead
RC6505
cable amplifier OPA
C1185
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Siemens Microwave
Abstract: marking code jf1
Text: SIEMENS HiRel Silicon Schottky Diode BAS 40 Features • • • • • • • HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package
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BAS40-T1
Q62702A1176
BAS40-T1
BAS40
de/semiconductor/products/35/35
de/semiconductor/products/35/353
Siemens Microwave
marking code jf1
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R C 6505 D ifferential IF Front-End Description • • • • • • • • • • The RC6505 incorporates IF gain stages, reference generators and a crystal oscillator on a single chip. The high input impedance enables direct interface to a SAW filter,
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RC6505
DS30006505
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC6505 D i f f e r e n t i a l IF F r o n t - E n d Description • • • • • • • • • • The RC6505 incorporates IF gain stages, reference generators and a crystal oscillator on a single chip. The high
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RC6505
80MHz
24-lead
RC6505
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