JMC5701
Abstract: GPS-101-2
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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Original
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PDF
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PCS6106
1-877-GOLDMOS
1522-PTF
JMC5701
GPS-101-2
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Untitled
Abstract: No abstract text available
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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Original
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PDF
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PCS6106-ND
220QBK-ND
1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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Original
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PDF
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1522-PTF
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Abstract: G200 JMC5701 transistor l 2050
Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS ® FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 13 dB gain. Nitride surface passivation and full gold metallization
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Original
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PDF
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1301-PTF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
G200
JMC5701
transistor l 2050
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JMC5701
Abstract: Y 335
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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Original
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PDF
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PCS6106-ND
220QBK-ND
1-877-GOLDMOS
1522-PTF
JMC5701
Y 335
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JMC5701
Abstract: 466W capacitor 30 pf
Text: PTF 10053 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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Original
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PDF
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P4525-ND
PCS6106-ND
220QBK-ND
1-877-GOLDMOS
1522-PTF
JMC5701
466W
capacitor 30 pf
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702 P TRANSISTOR
Abstract: 702 Z TRANSISTOR G200 JMC5701 ghz 100 watts amplifier circuit diagram capacitor 0.1uf DIGIKEY resistor 220ohm
Text: GOLDMOS PTF 10041 Field Effect Transistor 12 Watts, 1.99 GHz Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and
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Original
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PDF
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JMC5701
220ohm
220ZTR
1-877-GOLDMOS
1522-PTF
702 P TRANSISTOR
702 Z TRANSISTOR
G200
JMC5701
ghz 100 watts amplifier circuit diagram
capacitor 0.1uf DIGIKEY
resistor 220ohm
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