U125D

Abstract: c5856 T1-6TCUP U12B SMA200UP C71B RC0603 U740 AD9861 CC0805
Contextual Info: 4 3 1 2 REVISIONS D DVIN1 TB3 L9 1 TP23 RED JP4 LC0805 DRVDD BCASE TB3 VAL C11 DNP 16V BCASE C12 10UF 10V CC0805 C20 B Revision of pluto64dual Rev A. 0306.04 DATE APPROVED JRM C alter component package JP50, C43. misc labeling. spread J11,J12 0308.18 JRM D

DA12 16

Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
Contextual Info: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2

CA5420

Abstract: CA5420A CA5420AE CA5420AM CA5420AT CA5420E CA5420M CA5420T
Contextual Info: HARRIS SEMICOND SECTOR blE D • fii h a r r i s 43DS271 DD4b432 bflfl « H A S CA5420 Jrm % J S E M I C O N D U C T O R M mm Low Supply Voltage, Low Input Current BiMOS Operational Amplifier Features Description • CA5420A, CA5420 at 5V Supply Voltage with Full

jrm 45

Contextual Info: REV. B MATERIAL AND DESCRIPTION SEE ECO G M - 10790 DATE BY 1 1 /2 4 /9 9 JRM FINISH JACK HOUSING: CRES 3 0 3 PER ASTM A 4 8 4 AND ASTM A 5 8 2 OR ASTM A 5 5 5 AND ASTM A 581. GOLD PLATE PER MIL—G—4 5 2 0 4 SOCKET CONTACT: BERYLLIUM COPPER PER ASTM B 196 A N D /O R ASTM B 197.

022 JRC

Abstract: JRC 022 74221 74423 ctct
Contextual Info: — 230 — 74423 Dual R e trig g e ra b le S ingle S h o t to td CCfe zB ía. i2j^nininininiriLf •A I 1 IQ 20 2 Jrm/ GMO ?a m OA, B í O X * * f t * I HS;3C LT v^ ¿ è CLR t mm H i z i x i v otw= 0.45RT.CT f 5 k S < R l < 2 6 0 k ^ \ lOOOpFäCr RCTRIQGER PULSE

x-band magnetron

Abstract: magnetron ns
Contextual Info: 95-01-12 14:39 i-ooo r.ud. M ¡3 3 ' 2 H 3 | ^ H B I P i'0 d u c t bulletin y\ 133 '1 X -B a n d M a g n etro n GENERAL DESCRIPTION M133‘7 is a fixed frequency pulsed type X-band magnetron designed to operate in the frequency range of ^ 1 0 5 t^n y jrM H z with a peak output power o f SO kW. It is packaged and waveguide output

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

Contextual Info: MITSUBISHI RF POWER MODULE M57752 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm ©HK- —© P IN : © P in : RF INPUT © V C C 1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY © VC C 3 : 3nd. DC SUPPLY ®Po : RF O UTPUT

FST6035

Abstract: FST6040 FST6045 FST6050
Contextual Info: Schottky Powermod FST 60 P Millimeter Dim. Inches Minimum Maximum minimum Maximum Notes A C E F G H J K L M N P Microsemi Catalog Number Working Peak Reverse Voltage FST6035* FST6040* FST6045» FST6050* 35V 40V 45V 50V 1.995 0.495 0.990 2.390 1.4-90 0.120

k2038

Abstract: K1357 K 1357 k1363 K2077 K1349 K1356 K1574 K2039 K2222
Contextual Info: Power MOS FET Lineup Vdss = 60 ~ 200 V Voss (V) Id (A) S eriea lineup ir-M OS II ff-MOS L2-s*M OS III 0.8 1.0 2.0 T 2 S K 1 112(0.16) ▼ 2SJ183(0 35) 5 .0 •2S K 6 72(0.2) ♦ 2 S J 147 (0.20) O 2SJ224(0.2) ♦ 2 S K 5 3 2 (0.085) 10 12 O2SJ238(0.85) >2SK1717(0.35)

Contextual Info: FAST RECOVERY DIODE 30DF4 30DF6 3.3A /400— 6 0 0 V /trr : 400nsec FEATURES 5.8 .23 DIA • Super Fast Recovery -f °Low Forward Voltage Drop 1.5Í-059) DIA 1.3(.051) o Low Power Loss, High Efficiency 21(.83) ° High Surge Capability MIN ° 100 Volts through 600 Volts Types Available

jrm 45

Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Contextual Info: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1

jrm 45

Abstract: 30VQ04 30VQ03 30VQ03F 30VQ04F
Contextual Info: SCHOTTKY BARRIER DIODE 30VQ03 30VQ04 30 VQ 03F 30 VQ 04F 3 .3 A / 3 0 ~ 4 0 V FEATURES • TO-251AA Case • TO-252AA Case Surface Mount Device ° Low Forward Voltage Drop » Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts Types Available

Contextual Info: SCHOTTKY BARRIER DIODE iia /3 o ~ 4 ov fio p o s q f Ìopm q FEATURES o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0low Forward Voltage Drop » Low Power Loss, High Efficiency o High Surge Capability » 20 Volts thru 100 Volts Types

Contextual Info: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A/30~40V 5.31.209 4.71.185) FEATURES • Similar to TO-247AC TO-3P) Case .626) 0 Dual Diodes - Cathode Common 3.6C.142), — 5.71.224) 5.312081 3.4U34) 20.31.800) 4.3(.169) 3.71.145) o Low Forward Voltage Drop I57(775î

Y2550

Abstract: 30KF50B 30KF50E
Contextual Info: 30KF50E 30KF50B 3 3 A /5 0 0 V / trr : 70nsec FAST RECOVERY DIODE FEATU R ES 5.3{.209 4-7 185) 15.91.626) 3.6(.142)m . 1 5 .3 (.6 0 2 )^ / 3.4(.T34l o Similar to TO-247AC Case ° Ultra - Fast Recovery ° Low Forward Voltage Drop o Low Power Loss, High Efficiency

EC11FS1

Abstract: 21b4 200v 3A ultra fast recovery diode EC11FS2 185L
Contextual Info: FAST RECOVERY DIODE l . l A / 1 0 0 ~ 2 0 0 V / t r r : 30nsec EC 11FS 1 EC11FS2 FEATURES oMiniature Size, Surface Mount Device • 4.7 .185 ° Ultra - Fast Recovery * -^ _ 4 .7 (.1 6 8 )— « 4.3C .169) ] » Low Forward Voltage Drop 2.71.106) 2.3(.ft91)

jrm 45

Abstract: 30VF60 30VF60F
Contextual Info: FAST RECOVERY DIODE 30VF60 30VF60F 3.3A/eoov/trr :35nsec 2.38M AX .094 FEATURES 2.38M A X (.094) o TO-251AA Case o TO-252AA Case, Surface Mount Device o Ultra-Fast Recovery N O M IN A L 0.8M AX (.03) — I ° Low For weird Voltage Drop o Low Power Loss TO-252AA

FST10125

Contextual Info: D im . Inches M illim e te r M inim um M ax im u m Detail 6 -r Detail B MicrosemI Catalog Number FST10125* FST10130* FST10135* FST10140* FST10145* I Baseplate; Nickel plated copper; A C E F G H J K L M N P 1.995 0.495 0.990 2.390 1.490 0.120 M inim um 2.005

10KQ30

Abstract: F10KQ40 fl37 10KQ30B 10KQ40 10KQ40B F10KQ30B F10KQ40B
Contextual Info: n . / , n .nw 10KQ30 F10KQ30 10KQ40 F10KQ40 11A/30~40V 10KQ30B F10KQ30B 10KQ40B F10KQ40B CriinTTIfV RARRIFR niflRF o L H U IlK T HAHnltn IllUUt FEATURES ° Similar to T0-220AC and TO-220AB Case • Fully Molded Isolation Case F - Type ° Low Forward Voltage Drop

F103M

Contextual Info: YTF633 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jr-M O Sn HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR Unit in urn DRIVE APPLICATIONS. 10.3MAK. f- ¿3.610.2 FEATURES: •Low Drain-Source ON Resistance :

YTFP453

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:

f10p04q

Abstract: C10P04Q jrm 45 C10P03Q F10P F10P03Q
Contextual Info: SCHOTTKY BARRIER DIODE C10P03Q C10P04Q F10P03Q F10P04Q 11A/30~40V FEA TU R E S o Similar to T0-220AB Case « Fully Molded Isolation F-Type 0 Dual Diodes - Cathode Common 0 L o w Forward Voltage Drop » L o w Power L o s s , High Efficiency o High Surge Capability

60.0000 oscillator

Abstract: 318180
Contextual Info: REV «CMPTIBi D REVISED FREQ TABLE 1.0 MONITOR PART NUUER 2. 0 *- AgOTcrrATTny U Y H m t I K T B I ATTKS. HTUHS. T R I-S T A T E a 0 ELETTRI CAL CHARACTERISTICS NOIE 1 ADJUSDCNT RAM EJsZi _ 3 .1 .£ 1 ADJUSTMENT RESOJUnON 0&L a 1 .3 STABILITY a i . a i FREBUENCY v s AMBIENT