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    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


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    2sd 2901

    Abstract: low noise HEMT 2sd 311
    Text: Low Noise HEMT Chip Form JS8901-AS FEATURES: ULTRA LOW NOISE FIGURE I.O d B a tf = 12 GHz 1.3 dB a tf = 18 GHz • 0.3 ¿tm GATE LENGTH SUPER HIGH ASSOCIATED GAIN 11 dB at f = 12 GHz 9 d B a t f = 18 GHz CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 13 dB at f = 12 GHz


    OCR Scan     		JS8901-AS 12GHz 18GHz 12GHz 18GHz 2sd 2901 low noise HEMT 2sd 311 PDF