miteq
Abstract: Waveguide
Text: JSW SERIES LOW-NOISE WAVEGUIDE AMPLIFIERS MITEQ offers a complete line of waveguide amplifiers. Listed below is a sample of MITEQ’s noise figure capabilities as a function of frequency. Various options for bandwidth, gain, noise figure, VSWR and output power are available.
|
Original
|
JSW4-26004000-30-8A
WR229
WR137
WR112
miteq
Waveguide
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Motor Starting Capacitor – JSW FEATURES Small volume, large capacitance Low spoilage, stable capability The specific type of capacitors with high electrical characteristics are widely used in single phase A.C. motors with rated voltage of 110V-330V and the frequency of 50Hz-60Hz to
|
Original
|
10V-330V
50Hz-60Hz
40x90
45x100
50x100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Motor Starting Capacitor – JSW FEATURES Ø Small volume, large capacitance Ø Ø Ø Low spoilage, stable capability The specific type of capacitors with high electrical characteristics are widely used in single phase A.C. motors with rated voltage of 110V-330V and the frequency of 50Hz-60Hz to
|
Original
|
10V-330V
50Hz-60Hz
Betweenx90
45x100
50x100
40x90
|
PDF
|
miteq
Abstract: loss wr90 jsw 60
Text: JSW SERIES LOW-NOISE WAVEGUIDE AMPLIFIERS MITEQ offers a complete line of waveguide amplifiers. Listed below is a sample of MITEQʼs noise figure capabilities as a function of frequency. Various options for bandwidth, gain, noise figure, VSWR and output power are available.
|
Original
|
JSW4-26004000-30-8A
WR229
WR137
WR112
miteq
loss wr90
jsw 60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NICHIA STS-DA1-1379A <Cat.No.110629> N I CH I A CORPORATI ON SPECI FI CATI ON S FOR W H I TE LED N JSW 1 7 2 T Pb-free Reflow Soldering Application Built-in ESD Protection Device RoHS Compliant NICHIA STS-DA1-1379A <Cat.No.110629> SPECIFICATIONS 1 Absolute Maximum Ratings
|
Original
|
STS-DA1-1379A
|
PDF
|
JS-W-6008-T
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Material: Thickness: Plating: Wire Range: Insulation O.D.: C Brass 0.2mm Tin/Gold Plating Suitable for AWG#22~28 1.7mm max C D D E E Series JS-W Pluggable Connector F Type 6008 2.54mm Pitch Style T Terminal Finish
|
Original
|
JS-W-6008-T
JS-W-6008-T
|
PDF
|
JS-W-6010-T-X
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Material: Thickness: Plating: Wire Range: Insulation O.D.: C Brass 0.2mm Tin/Gold Suitable for AWG#22~28 1.7mm max C D D E E Series JS-W Pluggable Connector F Type 6010 2.54mm Pitch Style T Terminal Finish X T=Tin
|
Original
|
JS-W-60hickness:
JS-W-6010-T-X
JS-W-6010-T-X
|
PDF
|
JS-W-1255-T-XX
Abstract: AWG28-32
Text: 1 2 3 4 5 6 7 8 SPECIFICATIONS Terminal Material: Terminal Thickness: Terminal Plating: Wire Range: Insulation Resistance: A 9 Phosphor Bronze 0.15mm Tin Plated 60u”, Gold Suitable for AWG#28~32 1.00mm max. A B B C C D D E E Series JS-W Pluggable Connector
|
Original
|
JS-W-1255-T-XX
JS-W-1255-T-XX
AWG28-32
|
PDF
|
JS-W-6010T-XX
Abstract: JS-W-6008H-2-XX diode js
Text: 1 2 3 4 5 6 7 8 SPECIFICATIONS Terminal material: Terminal plating: Wire range: Insulation O.D.: Packaging: Accepts housing: A B 9 Brass, T=0.2mm Tin 60µ” or gold AWG #22-28 1.7mm max. 10,000 pcs/roll JS-W-6008H-1-XX JS-W-6008H-2-XX A B C C D D E E F Series
|
Original
|
JS-W-6008H-1-XX
JS-W-6008H-2-XX
6010T
6010T
JS-W-6010T-XX
JS-W-6010T-XX
JS-W-6008H-2-XX
diode js
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 6 SPECIFICATIONS Housing material: Positions: A 7 D E RoHS compliant Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35 1 A Pos. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Series JS-W Housing C Rev.
|
Original
|
UL94V-1
6008H
6008H
JS-W-6008H-1-XX
|
PDF
|
JS-W-6008H-2-XX
Abstract: JSW 70 jSW 52
Text: 1 2 3 4 5 6 7 SPECIFICATIONS Housing material: Positions: A A Pos. 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 C D E Series JS-W Housing RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35
|
Original
|
UL94V-1
6008H
6008H
JS-W-6008H-2-XX
JS-W-6008H-2-XX
JSW 70
jSW 52
|
PDF
|
JS-W-6008H-X-XX
Abstract: jsw 54 jSW 52 6008H
Text: 1 2 3 4 5 6 7 SPECIFICATIONS Material: Pitch: Poles: A B Pos 1 2 3 4 5 6 7 8 9 10 11 12 13 14 C D Single Row 8 A PBT, UL94V-1 2.54mm .100” 1~40 (single row) 4~80 (double row) Dimensions (single row) B Pos 15 2.54 16 5.08 17 7.62 18 10.16 19 12.70 20 15.24
|
Original
|
UL94V-1
JS-W-6008H-X-XX
JS-W-6008H-X-XX
jsw 54
jSW 52
6008H
|
PDF
|
JSW2-63DR
Abstract: No abstract text available
Text: SPDT RF Switch 50Ω JSW2-63DR+ 10 to 6000 MHz The Big Deal • Single Positive Supply Voltage • Medium Power P0.1dB, 2.8W • Low Insertion Loss, 0.33 dB at 1 GHz CASE STYLE: MT1818 Product Overview JSW2-63DR+ is a medium-power reflective SPDT RF switch, with reflective short on output ports in the
|
Original
|
JSW2-63DR+
MT1818
JSW2-63DR
|
PDF
|
VEB Funkwerk Erfurt
Abstract: VEB Elrado DK-621 TSS50 ELRA RPY6 Erfurt b 7 s 3 U.FLJ
Text: Fachbereich-Standard MC 621.385.832. S Æ jsw a an die durchf.Ste! le mit Kopie an die beauftr.ZfS der VVB-BFT B /V Elektronenröhren OSZILLOGRAPHENRÛHR3 B 7 S TGI 200-8024 3 Qmppe 3jl K1pOHHMC JIOMtlbl OciuuuurpafM M ecKcifl Entwurf August 1966 Electron
|
OCR Scan
|
|
PDF
|
|
|
ocr4
Abstract: 2SD1762 transistor 2a h
Text: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o
|
OCR Scan
|
2SB11Ã
2SD1762tzl
2SD1762.
O-220FP
ocr4
2SD1762
transistor 2a h
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CAGE CLAMfS CONNECTION 0.08 - 2.5 mm2 1000 V /8 kV/3 24 A 1000 V /8 kV/3 24 A 0.08 - 2.5 mm 400 V /6 kV/3 24 A Terminal block width 5 mm / 0.197 in i_ ^ 8 - 9 mm / 0.33 in Terminal block width 5 mm / 0.197 in 1_ ^ B - 9 mm / 0.33 in Terminal block width 5 mm / 0.197 in
|
OCR Scan
|
|
PDF
|
marking 606
Abstract: No abstract text available
Text: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed
|
OCR Scan
|
FX606
FX606
2SK1470,
marking 606
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN
|
OCR Scan
|
BUR20
BUR20
300ns,
10MHz
|
PDF
|
ECG1072
Abstract: No abstract text available
Text: PHILIPS E C G IN C 17E ^ 53^20 U T-77-05-07 E C G 1072 FM/AM-IF AMPLIFIER AND AUDIO AMPLIFIER Outline Drawing U n it: m m 0 .8 1 min. The ECG1072 ft a monolithic Integrated circuit designed as an F M /A M -IF amplifier and audio amplifier for portable radio sets.
|
OCR Scan
|
T-77-05-07
ECG1072
54min.
0033/jP
455kH«
SGI75Q)
400kH
ECQ1072
|
PDF
|
TL496
Abstract: SSIF
Text: — 240 T L — 4 9 6 -> u — X ' / T . ' f ' y U ^ r' n — ? 9 v m f j< D -> '] — v * - y v • u *r O .V - ? x \ xtrnuift' 1.i v h 3 . 0 V < D ¿ í , í + W t 3 5 IS , < D = > ^ A t n v í y t t X f , - / ' / , - / ■ x - f y ^ V y ■ £ L T » ftN -% . Î / U - X - l ' i l U— ?7i>r, x-i
|
OCR Scan
|
TL496
Wt35Ig
25CJJU:
10sec
TL496
-50//A
-80mA
-50mA
SSIF
|
PDF
|
transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
|
OCR Scan
|
MG200Q1US51
transistor JSW
jSw Diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.
|
OCR Scan
|
MG15Q6ES50A
961001EAA1
TjS125Â
|
PDF
|
TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable
|
OCR Scan
|
0P-295/0P-495
OP-295
14-Lead
TRANSFORMER bck 03
transistor JSW 07
OP295
|
PDF
|
jSw Diode
Abstract: No abstract text available
Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
|
OCR Scan
|
MG300Q2YS50
961001EAA1
jSw Diode
|
PDF
|