HSML-2822
Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
Text: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between
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HSMP382x
10Agilent
11Agilent
AV02-2139EN
HSML-2822
varactor diode model in ADS
Limiter PIN diode ADS model
hsml5822
PIN diode ADS model
varactor diode in p-n junction in ads
ADS varactor diode
hsms2820 limiter
zero bias schottky diode 2GHz
transistor JSW
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AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at
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AN4001
MRF151A
12MHz,
AN4001
laser diode spice model simulation
Class E amplifier
300 watt mosfet amplifier class AB
MRF transistor
PIN diode MACOM SPICE model
27.12MHz power amplifier
27.12Mhz
500 watt mosfet power amplifier circuit diagram
1000 watt mosfet power amplifier
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2SB1008
Abstract: No abstract text available
Text: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$
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2SB1008
O-126
600mA/-1
100mA
2SB1008
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ocr4
Abstract: 2SD1762 transistor 2a h
Text: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o
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2SB11Ã
2SD1762tzl
2SD1762.
O-220FP
ocr4
2SD1762
transistor 2a h
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Untitled
Abstract: No abstract text available
Text: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN
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BUR20
BUR20
300ns,
10MHz
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transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
transistor JSW
jSw Diode
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transistor JSW
Abstract: diode JSW FL 576-K125
Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM
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6DI30M-050
E82988
l95t/R89
Shl50
transistor JSW
diode JSW
FL 576-K125
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.
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MG15Q6ES50A
961001EAA1
TjS125Â
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TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable
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0P-295/0P-495
OP-295
14-Lead
TRANSFORMER bck 03
transistor JSW 07
OP295
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jSw Diode
Abstract: No abstract text available
Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG300Q2YS50
961001EAA1
jSw Diode
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transistor JSW
Abstract: toshiba srf
Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q2YS50
transistor JSW
toshiba srf
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transistor GY 721
Abstract: transistor JSW LT 723 ic jSw Diode
Text: TOSHIBA MG240V1US41 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT M G 2 4 0 V 1 US41 HIGH PO W E R SWITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed
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MG240V1US41
i00000,
transistor GY 721
transistor JSW
LT 723 ic
jSw Diode
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q2YS50
TjS125Â
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BA4904A
Abstract: AV011 av033 BA3906
Text: BA3902 BA3904A BA3906 Power supply, standard voltag The BA3902, BA3904A, and BA3906 are power supplies used in car audio systems. Features • available in an SIP-M12 package • four power sources available from each IC — BA3902: 5.0 V, 8.5 V x2 , 9.0 V
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BA3902
BA3904A
BA3906
BA3902,
BA3904A,
BA3906
SIP-M12
BA3902:
BA3904A:
BA3906:
BA4904A
AV011
av033
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ic 7485 4 bit comparator
Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
Text: ^ Tex as In s t r u m e n t s CD4585B Types Data sheet acquired from Harris S em iconductor SCHS091 CMOS 4-Bit Magnitude Comparator High Voltage Types 20-Volt Rating • CD4585B is a 4-bit magnitude com parator designed for use in computer and logic applications that require the comparison
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SCHS091
CD4585B
20-Volt
CD45858
ic 7485 4 bit comparator
16 bit comparator using 74*85 IC
CD40298
Ic 7485 comparator function table
transistor JSW
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imperial m015
Abstract: No abstract text available
Text: □ ANALOG DEVICES Dual/Quad Single Supply Operational Amplifiers 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V/ jls High Gain Bandwidth: 4 MHz Low Input Offset Voltage
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0P292/0P492
OP292
14-Lead
OP292/OP492
1E-13
37E-13
11E-13
48E-6
53E16
75E-6
imperial m015
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transistor JSW
Abstract: SSM2135
Text: JUL e 199Û Dual Single-Supply Audio Operational Amplifier ANALOG ► DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V lïz Equivalent Input Noise @ 1 kHz 0.001% THD+N Vn = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth
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SSM-2135
2000E
transistor JSW
SSM2135
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low noise Microphone Preamplifier
Abstract: SSM2135
Text: BACK Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG ► DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V H z Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth
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SSM-2135
SSM-2135
SSM2135
low noise Microphone Preamplifier
SSM2135
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Amplitude Modulation using tractor diode
Abstract: RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135
Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V Hz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable
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SSM2135
SSM-2135
volt75Eâ
SSM-2135
2000E
65E-04
Amplitude Modulation using tractor diode
RS1016
PMI PM7528
transistor de audio fp 1016
transistor audio fp 1016
PM-7528
BF253
electret condenser microphone preamplifier
professional microphone preamp
SSM2135
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differential electret condenser microphone preamp
Abstract: transistor JSW 12 SSM2135
Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V fiz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable
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SSM2135
SSM-2135
differential electret condenser microphone preamp
transistor JSW 12
SSM2135
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Untitled
Abstract: No abstract text available
Text: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current
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120pA
T0-220
LT1072
LT1082
LT1082
T0-22Q
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transistor JSW 12
Abstract: Sonic Drive SSM2135
Text: Dual Single-Supply Audio Operational Amplifier SSM2135 ANALOG DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V H z Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth Unity-Gain Stable
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SSM2135
SSM-2135
transistor JSW 12
Sonic Drive
SSM2135
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Untitled
Abstract: No abstract text available
Text: C 2 î ¡992 ANALOG ► DEVICES Low Noise, Low Drift Single-Supply Operational Amplifier OP-213* PIN CONNECTIONS FEATURES Single or Dual Supply Operation Low Noise: 5 n V /V H z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jj.V Very Low Drift: 0.2 nV/°C
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OP-213*
P-213
OP-213.
53E16
OP-213
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transistor JSW
Abstract: No abstract text available
Text: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable
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OP-113/0P-213/0P-413*
OP-113
53E16
OP113
transistor JSW
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