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    JUNCTION TO CASE THERMAL RESISTANCE OF TO-3 PACKAGE Search Results

    JUNCTION TO CASE THERMAL RESISTANCE OF TO-3 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    JUNCTION TO CASE THERMAL RESISTANCE OF TO-3 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ATS WHITE PAPER Device Thermal Coupling on a PCB THERMAL MINUTES Device Thermal Coupling on a PCB 1 to 5 mm Gap Insulation to Board or Insulation to Package Junction Temperature Board Temperature Thermocouple Soldered to Middle Lead Figure 1. Cross Section


    Original     		PDF JESD51-2, JESD51-6,

    AN1232

    Abstract: QFP PACKAGE thermal resistance micromechanical
    Text: MOTOROLA Order this document by AN1232/D SEMICONDUCTOR TECHNICAL DATA AN1232 Thermal Performance of Plastic Ball Grid Array PBGA Packages for Next Generation FSRAM Devices Prepared by: Shailesh Mulgaonker (APDC, Phoenix, AZ) and Bennett Joiner (APDPL, Austin, TX)


    Original     		PDF AN1232/D AN1232 AN1232/D* AN1232 QFP PACKAGE thermal resistance micromechanical

    Untitled

    Abstract: No abstract text available
    Text: FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC3020DC FDMC3020DC

    40-gauge

    Abstract: No abstract text available
    Text: SECTION 4 DESIGN CONSIDERATIONS HEAT DISSIPATION An estimation of the chip junction temperature, TJ, in °C can be obtained from the equation: Equation 1: T J = T A + P D x R θJA Where: TA= ambient temperature ˚C RθJA= package junction-to-ambient thermal resistance ˚C/W


    Original     		PDF DSP56L811 40-gauge

    27533

    Abstract: marking 37525 37525 QFN8 37530 marking 27550 MC3327DT-3
    Text: MC33275, MC33375, NCV33275 Product Preview 300 mA, Low Dropout Voltage Regulator http://onsemi.com The MC33275 and MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK and QFN−8, 4x4 surface


    Original     		PDF MC33275, MC33375, NCV33275 MC33275 MC33375 OT-223, BRD8011/D. 27533 marking 37525 37525 QFN8 37530 marking 27550 MC3327DT-3

    THM7023

    Abstract: LAYOUT Multiwatt P432
    Text: APPLICATION NOTE THERMAL CHARACTERISTICS OF THE MULTIWATT PACKAGE By R. T IZ IANI INTRODUCTION This Application Note provides a complete thermal characterization of the Multiwatt  package multilead double TO-220 - fig. 1 . Characterization is performed according with recomandations included in the G32-86 SEMI guideline,


    Original     		PDF O-220 G32-86 THM7023 LAYOUT Multiwatt P432

    Untitled

    Abstract: No abstract text available
    Text: FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC3020DC FDMC3020DC

    P432

    Abstract: THM7023 AN-258 HEPTAWATT LAYOUT PENTAWATT
    Text: APPLICATION NOTE THERMAL CHARACTERISTICS OF THE PENTAWATT-HEPTAWATT PACKAGES By R. T IZ IANI INTRODUCTION This Application Note is aimed to give a complete thermal characterization of the Heptawatt and Pentawatt package fig. 1, 2 . Characterization is performed according with recomendationsincludedin theG32-86SEMI guideline,by


    Original     		PDF theG32-86SEMI P432 THM7023 AN-258 HEPTAWATT LAYOUT PENTAWATT

    27533G

    Abstract: 27550G 27525G 27530G 27550 27533 27530 marking 27550 MC33275 NCV33275
    Text: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount packages. These devices feature a very low quiescent current and are


    Original     		PDF MC33275, NCV33275 MC33275 OT-223, MC33275/D 27533G 27550G 27525G 27530G 27550 27533 27530 marking 27550 NCV33275

    FDMS2510SDC

    Abstract: 10-L41B-11
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC7660DC FDMC7660DC

    Untitled

    Abstract: No abstract text available
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS86500DC FDMS86500DC

    MARKING 3020

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC3020DC FDMC3020DC MARKING 3020

    10-L41B-11

    Abstract: No abstract text available
    Text: FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS3016DC FDMS3016DC 10-L41B-11

    27550

    Abstract: Motorola suffix MC33275
    Text: Order this document by MC33275/D MC33275 Low Dropout 300 mA Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, DPAK, SOT–223, and SOP–8 surface mount packages. These devices feature a


    Original     		PDF MC33275/D MC33275 MC33375 MC33275/D 27550 Motorola suffix

    FDMS86300

    Abstract: No abstract text available
    Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS86300DC FDMS86300DC FDMS86300

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC7660DC FDMC7660DC

    27550G

    Abstract: 27533G 27525G 27550 27533 27530G marking 27550 TRANSISTOR 751 marking 221 sop8 MC33275
    Text: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, and DPAK surface mount packages. These devices feature a very low quiescent current and are capable of


    Original     		PDF MC33275, NCV33275 MC33275 OT-223, MC33275/D 27550G 27533G 27525G 27550 27533 27530G marking 27550 TRANSISTOR 751 marking 221 sop8

    FDMS7650DC

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS7650DC FDMS7650DC

    Untitled

    Abstract: No abstract text available
    Text: FDMC86520DC N-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 mΩ Features „ Dual Cool TM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMC86520DC FDMC86520DC

    fdms86500

    Abstract: FDMS86500dc
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS86500DC FDMS86500DC fdms86500

    MC33275

    Abstract: MC33375 marking 27550
    Text: MC33275 300 mA, 2.5 V, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, DPAK, SOT–223, and SOP–8 surface mount packages. These devices feature a very low quiescent current and are capable of


    Original     		PDF MC33275 MC33275 MC33375 r14525 MC33275/D marking 27550

    78L05 equivalent

    Abstract: TO-92 78L05 voltage regulator pin configuration 78l12 transistor 78L12A 78l02ac 12QHz transistor 78L15a 78L06C 78L05C 78L05A
    Text: FEATURES ABSOLUTE MAXIMUM RATINGS • OUTPUT CURRENT UP TO 100mA . NO EXTERNAL COMPONENTS • INTERNAL THERMAL OVERLOAD PRO­ TECTION . INTERNAL SHORT CIRCUIT CURRENT LIMITING • AVAILABLE IN JEDEC TO-92 ANO LOW PROFILE TO-39 PACKAGES . OUTPUT VOLTAGES OF 2.6V, 5V, 6.2V,


    OCR Scan     		PDF 100mA 78L00-AC) 78L00C) 78L05 equivalent TO-92 78L05 voltage regulator pin configuration 78l12 transistor 78L12A 78l02ac 12QHz transistor 78L15a 78L06C 78L05C 78L05A

    UES1422

    Abstract: UES1420 UES1421 UES1423
    Text: 12 UNITRODE CORP 9347963 DE I ,ì347clb3 0D11031 UN I TRODE CORP 92D RECTIFIERS D U E S 1 4 2 0 -U E S 1 4 2 3 T -0 3 -/-7 High Efficiency, 8A FEATURES ° Low dynamic forward voltage • Very fast recovery times • Economical, convenient plastic package • Low thermal resistance


    OCR Scan     		PDF 0D11031 UES1420 O-220, 100kHz. UES1422 UES1421 UES1423