ss100 transistor
Abstract: SS100 ks18 smd ss12 smd diode ss12 KS100 KS12 KS13 KS14 KS15
Text: Diodes SMD Type Schottky Rectifiers KS12 - KS100 SS12 - SS100 DO-214AC(SMA) Features Unit: mm 3.93 3.73 4.597 3.988 Glass passivated junctions. 1.575 1.397 High current capability, low VF. 2.896 2.489 1 2 1.67 1.47 For use in low voltage, high 2.38 2.18
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KS100
SS100)
DO-214AC
ss100 transistor
SS100
ks18
smd ss12
smd diode ss12
KS100
KS12
KS13
KS14
KS15
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1N6510
Abstract: MX1N6510
Text: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
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1N6510
16-PIN
1N6510
MX1N6510
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P6002AD
Abstract: 1600VAC teccor Invensys
Text: TECCOR E L E C T RO N I C S 1 2 3 ´$µ3DFNDJH 0RGLILHG72 P6002AD HDWXUHV • Bidirectional transient voltage protection • Clamping speed of nanoseconds • Surge current capability 300A, 10 x 1000µs and 1000A, 2 x 10µs • Glass passivated junctions for superior reliability
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0RGLILHG72
P6002AD
P6002AD
1600VAC
teccor
Invensys
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Untitled
Abstract: No abstract text available
Text: DB101 - DB107 1.0A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • UL Recognized Component Ideal for Printed Circuit Board Glass Passivated Chip Junctions, Surge Overload Rating of 50A Peak Simple, Compact Structure for Trouble-free
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DB101
DB107
MIL-STD-202,
DS21211
DB101-DB107
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1N6508
Abstract: No abstract text available
Text: 1N6508 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
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1N6508
14-PIN
1N6508
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1N6509
Abstract: No abstract text available
Text: 1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
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1N6509
14-PIN
1N6509
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FT1614
Abstract: No abstract text available
Text: FT16.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 16 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-263AB D2PAK FEATURES Glass/passivated die junctions Medium current Triac Low thermal resistance Ideal for automated placement
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O-263AB
2011/65/EU
2002/96/EC
J-STD-020,
ft16ghc
Oct-13
FT1614
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Untitled
Abstract: No abstract text available
Text: FS1209.D STANDARD SCR On-State Current 12 Amp TO-252AA DPAK 2 2 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES Glass/passivated die junctions Medium current SCR Low thermal resistance High surge current capability Low forward voltage drop
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FS1209
O-252AA
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
fs1209dst
Sep-13
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PDF
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Untitled
Abstract: No abstract text available
Text: FS08.D STANDARD SCR On-State Current 8 Amp TO-252AA DPAK 2 0.5 mA to 15 mA Off-State Voltage 400 V ÷ 800V FEATURES Glass/passivated die junctions Medium current SCR Low thermal resistance High surge current capability Low forward voltage drop
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O-252AA
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
fs08dst
May-13
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PDF
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Untitled
Abstract: No abstract text available
Text: FT04.D HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 4 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-252AA DPAK FEATURES Glass/passivated die junctions Medium current Triac Low thermal resistance Ideal for automated placement
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O-252AA
2011/65/EU
2002/96/EC
J-STD-020,
ft04dhc
May-13
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PDF
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR T12M25F600B TRIACS 12 AMPERES RMS 600 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low
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T12M25F600B
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR T12M50F-B SERIES TRIACS 12 AMPERES RMS 600 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Gate Triggering Guaranteed in Four Modes
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T12M50F-B
O-220AB
O-220AB
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Schottky diode wafer
Abstract: No abstract text available
Text: Schottky Barrier Beam Lead Anti-Parallel Pairs MA40278, MA40279 Series V3.00 Case Style 942 Features ● ● ● ● ● ● Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions Three Diode Barrier Heights are Available Minimum Parasitics for Broadband Designs
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MA40278,
MA40279
Schottky diode wafer
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Untitled
Abstract: No abstract text available
Text: SERIES I MIL-DTL-5015 THERMOCOUPLE CONTACTS & INSERT ARRANGEMENTS BY SHELL SIZE A thermocouple is essentially a pair of wires of dissimilar metals connected at both ends. When the two junctions are subjected to different temperatures, an electrical potential is set up between them,
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MIL-DTL-5015
0A-17
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Untitled
Abstract: No abstract text available
Text: Zener Diode Chip Series CD4678 thru CD4717 Features • All junctions completely protected with silicon dioxide • Electrically equvalent to IN4678 thru IN4717 • 0.5 Watt capability with proper heat sinking • 50 A low operating current Zener Diodes
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CD4678
CD4717
IN4678
IN4717
200mA:
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HYPERABRUPT
Abstract: No abstract text available
Text: Abrupt and hyperabrupt junctions The abruptness of a junction refers to the rate of change n along the diode's C-V curve, i.e. the junction ca p a c ita n c e versus the applied voltage. If n ~ 0,5, the junction is a b r u p t; if n > 0,5, the junction is hyperabrupt.
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CD5279B
Abstract: CD5265B zener diode si 18 1n522ib CD5221B CD5222B CD5223B CD5224B CD5225B CD5226B
Text: jCOMPENSATED DEVICES INC . * M l R DIODE CHIPS' ;— EQE D I 2305554 DÖD041D 1 ' • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B • ELECTRICALLY EQUIVALENT TO 1N522IB THRU 1N5281B thru . GENERAL PURPOSE 500 mW CHIPS CD528I1B • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
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D041D
1n522ib
1n5281b
CD5221B
CD528I1B
CD5221B
CD5222B
CD5223B
CD5224B
CD5225B
CD5279B
CD5265B
zener diode si 18
CD5226B
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CD4490
Abstract: CD4464 CD4469 CD4460 CD4468 DIODE 33 25 CD4461 CD4462 CD4463 CD4465
Text: • 1.5 WATT ZENER DIODE CHIPS CD4460 thru • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACHED TECHNIQUES CD4490 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: -65°C to +175°C
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CD4460
CD4490
CD4460
CD4461
P30E5SM
23DZSS4
0DDD72Ã
CD4490
CD4464
CD4469
CD4468
DIODE 33 25
CD4462
CD4463
CD4465
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ZENER DIODE 5.1V
Abstract: zener DIODE A1 zener a1 7 10 watt zener diode diode ZENER A1 CD6485 CD6486 CD6487 CD6490 CD6491
Text: • ZENER DIODE CHIPS CD6485 • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru • COMPATIBLE WITH ALL WIRE BONDING DIE ATTACH TECHNIQUES CD6491 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: Storage Temperature:
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CD6485
CD6491
200mA
CD6485
CD6486
CD6487
2305SS4
000075b
ZENER DIODE 5.1V
zener DIODE A1
zener a1 7
10 watt zener diode
diode ZENER A1
CD6490
CD6491
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pulse metal detector
Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
Text: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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Untitled
Abstract: No abstract text available
Text: Silicon Schottky Barrier Detector Diodes CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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Untitled
Abstract: No abstract text available
Text: j>\ I n ter n a tio n a l y 1N4933GP S e m ic o n d u c to r , I n c . thru FAST RECOVERY PLASTIC SILICON RECTIFIERS VO LTA G E - 50 TO 600 Volts 1N4937GP CURRENT - 1.0 Ampere FEATURES MECHANICAL DATA • Glass Passivated Junctions :o C ase: JEDEC DO-41, molded
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1N4933GP
1N4937GP
DO-41,
IL-S-202,
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Untitled
Abstract: No abstract text available
Text: _ _ „ _ • international W Rectifier 4555452 G ü lb S H Üb3 ■ INR international rectifier ^se» s e rie s b4oa BACK TO BACK SCRs Power Modules 40A Features ■ G la s s p assivated junctions for greater reliability ■ Electrically isolated b a se plate 3500V RM S
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W 135 Zener
Abstract: 1N4370A 1N4372A 1N746A 1N759A CD4370A CD4371A CD4372A CD746A CD747A
Text: CD746A thru CD759A • 1N746A THRU 1N759A AVAILABLE IN JANC and • 1N4370A THRU 1N4372A AVAILABLE IN JANC CD4370A thru CD4372A • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE •COMPATIBLE WITH ALL WIRE BONDING DIE ATTACH TECHNIQUES
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1N746A
1N759A
1N4370A
1N4372A
CD746A
CD759A
CD4370A
CD4372A
200mA:
W 135 Zener
CD4371A
CD4372A
CD747A
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