29CD016
Abstract: JV3 diode S29CL-J spansion S29CD016J S29CD032J S29CD-J S29CL016J S29CL032J S29CL032
Text: S29CD-J & S29CL-J Ordering Information Supplement Supplement 1. Preface This document includes the details on how to order the following products affected from a specific wafer fab and assembly locations using the 18th character field in the Spansion Ordering Part Number OPN .
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S29CD-J
S29CL-J
S29CD016J
S29CL016J
S29CD032J
S29CL032J
S29CL-J
S29CD-J
29CD016
JV3 diode
spansion
S29CD016J
S29CD032J
S29CL016J
S29CL032J
S29CL032
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JV3 diode
Abstract: jv3 Marking JV3 SOT23 diode jv3 LBAT54LT1 LBAT54LT1G jv3 15
Text: LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes LBAT54LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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LBAT54LT1
OT-23
LBAT54LT1G
3000/Tape
LBAT54LT1-2/3
LBAT54LT1-3/3
JV3 diode
jv3 Marking
JV3 SOT23
diode jv3
LBAT54LT1
LBAT54LT1G
jv3 15
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jv3 Marking
Abstract: JV3 SOT23 BAT54LT1 BAT54LT1G
Text: BAT54LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1
jv3 Marking
JV3 SOT23
BAT54LT1
BAT54LT1G
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SMD LD3
Abstract: marking code LD3 DIODE SMD MARKING 5C JV3 diode A2 DIODE SMD CODE MARKING smd diode marking code jv3 SMD jv3 marking code a2 SMD diode jv3 Marking smd diode marking code a2
Text: Spec. No. : C302N3-L Issued Date : 2003.04.14 Revised Date : 2005.11.08 Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.
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C302N3-L
BAT54N3/BAT54AN3
BAT54CN3/BAT54SN3
OT-23
BAT54
BAT54A
BAT54C
OT-23
BAT54S
UL94V-0
SMD LD3
marking code LD3
DIODE SMD MARKING 5C
JV3 diode
A2 DIODE SMD CODE MARKING
smd diode marking code jv3
SMD jv3
marking code a2 SMD diode
jv3 Marking
smd diode marking code a2
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes LBAT54LT1G S-LBAT54LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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LBAT54LT1G
S-LBAT54LT1G
OT-23
AEC-Q101
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JV3 diode
Abstract: BAT54LT1G jv3 Marking
Text: BAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1G
OT-23
O-236AB)
BAT54LT1/D
JV3 diode
BAT54LT1G
jv3 Marking
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diode Marking code jv3
Abstract: diode Marking code jv3 f jv3 Marking JV3 diode BAT54LT1 BAT54LT1G
Text: BAT54LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1
BAT54LT1/D
diode Marking code jv3
diode Marking code jv3 f
jv3 Marking
JV3 diode
BAT54LT1
BAT54LT1G
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Untitled
Abstract: No abstract text available
Text: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1G,
NSVBAT54LT1G
BAT54LT1/D
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NS sot-23
Abstract: NSVBAT54
Text: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1G,
NSVBAT54LT1G
125Cplicable
BAT54LT1/D
NS sot-23
NSVBAT54
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Untitled
Abstract: No abstract text available
Text: BAT54LT1G, NSVBAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1G,
NSVBAT54LT1G
BAT54LT1/D
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Untitled
Abstract: No abstract text available
Text: 3 4 EXP 1 4 5 10 GND 11 2 7 8 13 74LS595D U3 C GND1 GND2 GND3 GND4 22 23 24 OUT3 OUT3 OUT3 19 20 21 16 17 18 OUT4 OUT4 OUT4 PIN15 CDBU0240 PIN16 CDBU0240 PIN17 D11 CDBU0240 PIN18 D12 13 G QH* 74LS595D 1 R2A 2 14 15 3 6 9 12 4 5 10 GND 11 2 7 8 13 VCC VCC IN1
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PIN15
CDBU0240
PIN16
PIN17
PIN18
74LS595D
PIN21
PIN22
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diode Marking code jv3
Abstract: jv3 Marking BAT54LT1G JV3 diode
Text: BAT54LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1G
BAT54LT1/D
diode Marking code jv3
jv3 Marking
BAT54LT1G
JV3 diode
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Untitled
Abstract: No abstract text available
Text: Leshan Radio Co.Ltd Schottky Barrier Diodes LBAT54LT1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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LBAT54LT1G
OT-23
3000/Tape
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Untitled
Abstract: No abstract text available
Text: THRU BAT54 BAT54S SMALL SIGNAL SCHOTTKY BARRIER DIODES SOT-23 0.020 0.51 0.014(0.35) Extremely fast switching speed Very small conduction losses Schottky barrier diodes encapsulated in a SOT-23 PACKAGE Low forward voltage High speed switching applications circuit protection
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BAT54
BAT54S
OT-23
OT-23
BAT54A
BAT54C
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Untitled
Abstract: No abstract text available
Text: IR Receiver Modules Opto Electronics Co., Ltd R3□□V3□ DIMENSIONS The R3□□V3□ consist of a PIN Photodiode of high Supply Voltage & Pinning Model NO. Voltage R31□V3□ 4.5~6.0 R32□V3□ 2.7~6.0 R33□V3□ 4.5~6.0 R34□V3□ 2.7~6.0 R35□V3□
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R31V3
R32V3
R33V3
R34V3
R35V3
R36V3
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jv3 Marking
Abstract: JV3 diode kl3 diode WSD421 WSD425 JV33 jv3 15
Text: WSD421 WSD425 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208
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WSD421
WSD425
100mAMPERES
40VOLTS
MIL-STD-202
OT-23
OT-23
jv3 Marking
JV3 diode
kl3 diode
WSD421
WSD425
JV33
jv3 15
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Untitled
Abstract: No abstract text available
Text: BAT54LT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54LT1
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Untitled
Abstract: No abstract text available
Text: Small Signal Schottky Diodes CDBT-54/S/C/A-HF Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Halogen free SOT-23 Features 0.122 3.10 -Design for mounting on small surface. -High speed switching application, circuit protection. 0.106(2.70) 3
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CDBT-54/S/C/A-HF
OT-23
OT-23,
MIL-STD-750,
CDBT-54-HF
CDBT-554A-HF
CDBT-54S-HF
CDBT-54C-HF
QW-JB004
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Abstract: No abstract text available
Text: Small Signal Schottky Diodes CDBT-54/S/C/A-HF Reverse Voltage: 30 Volts Forward Current: 200 mA RoHS Device Halogen free SOT-23 Features 0.122 3.10 -Design for mounting on small surface. -High speed switching application, circuit protection. 0.106(2.70) 3
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CDBT-54/S/C/A-HF
OT-23
OT-23,
MIL-STD-750,
CDBT-54-HF
CDBT-54ST-54A-HF
CDBT-54S-HF
CDBT-54C-HF
QW-JB004
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e DF15J C 10 100 V 15A Feature • SMD ' SM D 1Low lR=0.6mA • f ilR = 0 .6 m A • i» # îê « b c u 1 Resistance for thermal run-away : <U • /Jv3ü*3iES* 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^
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DF15J
DF15JC10
J532-1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm DE10SC3L o u t lin e E-pack Package Unii I mm Weight 0.326« Typ 30 V 10A Feature • SMD • SMD 1 • (S V f = 0.45V • Low V f=0.45V • P r r s m 7’ K 5 > ì ' i ì ì ì • PnnsM Rating • /Jv3Ü*®3ÎES*
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DE10SC3L
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joysticks
Abstract: No abstract text available
Text: M AY 19 85 MICROSWITCH JOYSTICKS TYPES JV 3 A N D JV 4 RS 332-111 (RS 3 3 2 -1 0 5) I m COMPACT • LOW COST ■ INDUSTRY STANDARD SWITCHES ■ RUGGED ■ LONG LIFE ■ VERSATILE ■ 5 to 15 AM P RATING ■ RELIABLE These two joysticks were designed to utilise standard V3 or V4 microswitches in a compact,
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Untitled
Abstract: No abstract text available
Text: IRF750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ ^DS on = 0 .3 £2 lD * 15 A Lower Leakage Current : 10 jiA {M ax.) @ VDS = 400V
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IRF750A
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601lt
Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |
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S8426A*
NQS8426t
NDS8425
NDS8926
NDS9925A
NDS8410A
NDS8410Î
NDS9410A
NOS8936
NDS9936
601lt
Complementary MOSFET Half Bridge
NDS351AN
MDs9933
NDS331N
NDS356
NDS9952A
FDV302P
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