BAV170

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 ! , ,   Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAV170

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAV170

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

bav170

Abstract: MarKING Jxs sot23
Contextual Info: BAV170. Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times BAV170 3 D 2 D 1 1 2 Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAV170

Contextual Info: BAV170 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol

SMD MARKING CODE JYP

Abstract: JYP SOT23 Marking Code SMD za BAV199 MARKING A53 diode smd A53 SMD
Contextual Info: Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 • Switching time: typ. 0.8 jxs 2 cathode • Continuous reverse voltage: 3 anode; cathode

BAV170

Abstract: Marking code jxs Q62702-A920 MarKING Jxs sot23 JXs sot JXs SOT23
Contextual Info: Silicon Low Leakage Diode Array BAV 170 Low leakage applications ● Medium speed switching times ● Common cathode ● Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol

sst310

Abstract: SST309 PART MARKING Z08 MARKING marking z08 Z08 SOT 5
Contextual Info: fTT*Siliconix SST308 SERIES N-Channel JFETs Jm W incorporated The SST308 Series is the surface mount equivalent of our popular J308 Series. It features high-gain > 8000 jxS , low noise (typically < 6nWHz) and low gate leakage (typically < 2 pA). Of special interest,

Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700*

A07004

Abstract: JXs sot
Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 « SOT-23 EH I M ° EH A07004

JXs sot

Abstract: BAV170 MarKING Jxs sot23
Contextual Info: BAV 170 Silicon Low Leakage Diode Array 3 • Low-leakage applications • Medium speed switching times • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 170 JXs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter

marking CAR 5-pin

Abstract: JXs sot lm7221 D381 dip 6
Contextual Info: September 1995 Semiconductor & LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input and Open Drain Output General Description Features The LM7221 is a micropower CMOS comparator available in the space saving SOT23-5 package. This makes this comparator ideal for space and weight critical designs. The

Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE CO M M O N ANODE DIODE PAIR ISSU E 2 - JANUARY 1996 O DIODE PIN CONNECTION 1 PA R T M A R K IN G D ETA IL - D63 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage V VALUE 100 V 250 mA rrm A ve ra ge Rectified Forward Current

JXs sot

Contextual Info: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) ♦ Top View .016 (0.4) These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

Contextual Info: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) .016 (0.4) These diodes feature very low turn-on voltage and fast switching. Top View These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis­

bc849

Contextual Info: BC846 THRU BC849 Small Signal Transistors NPN FEATURES SOT-23 •122 (3.1) .118 (3.0) 016 (0.4) ♦ NPN Silicon Epitaxial Planar Transistors fo r switching and AF am plifier applications. ♦ Especially suited fo r autom atic insertion in th ick- and thin-film circuits.

Dale R018

Abstract: RC5201 IHSM 7832 intelligent battery charger circuit diagram REGULATOR IC 7832 SSOP24 TSSOP24 Advanced Smart Battery Pack Controller RC5201G WSL2512R018
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC5201 Chemistry Independent Intelligent Battery Charger Features Applications • Notebooks’ fast chargers • PDAs • Hand-held portable instruments Description An innovative power control loop allows operation from line

BAV170

Abstract: BCW66
Contextual Info: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAV170 ! , ,   Type Package Configuration Marking BAV170 SOT23 common cathode

Contextual Info: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

Contextual Info: Central’ CMPD5001 CMPD5001S Semiconductor Corp. HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load

MarKING Jxs sot23

Abstract: A82/MARKING MARKING D53 C2 marking code marking code C1 marking code c2 marking code LA CMPD2003 CMPD2004 CMPD2004S
Contextual Info: Central" CMPD2003 CMPD2004 CMPD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for

MMBT200

Abstract: pn200
Contextual Info: PN200/MMBT200 E J l National J u t Semiconductor PN200 MMBT200 UjT /M/ /#/ M TO-236 SOT-23 TO-92 ED U ' TL/G/10100-5 *C . TL/G/10100-1 P N P G e n e r a l P u r p o s e A m p lif ie r E le c tric a l C h a r a c t e r is t ic s ta = 25°c unless otherwise noted

Contextual Info: BAV70 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching dual diode with common cathode ♦ This diode is also available in other configurations including: a dual anode to cathode with type designation BAV99, a dual common anode