CDR03 receiver module
Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0097-0805
CDR03 receiver module
CDR03 receiver
9926 mosfet
Optoelectronics Device data
Zener diode smd marking code 621
"Piezoelectric Sensor"
sun chemical un 1210
array resistor 9926
ceramic disc 104 aec capacitors
Zener diode smd marking code w1
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HEP89
Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2 transistor tt 2170
Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The
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MC10EP89
MC10EP89
r14525
MC10EP89/D
HEP89
HP89
MC10EP89D
MC10EP89DR2
MC10EP89DT
MC10EP89DTR2
transistor tt 2170
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MC10EP89
Abstract: No abstract text available
Text: MC10EP89 3.3V / 5V ECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The
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MC10EP89
r14525
MC10EP89/D
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HEP89
Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The
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MC10EP89
MC10EP89
r14525
MC10EP89/D
HEP89
HP89
MC10EP89D
MC10EP89DR2
MC10EP89DT
MC10EP89DTR2
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hep89
Abstract: transistor tt 2170 HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The
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MC10EP89
MC10EP89
r14525
MC10EP89/D
hep89
transistor tt 2170
HP89
MC10EP89D
MC10EP89DR2
MC10EP89DT
MC10EP89DTR2
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transistor D361
Abstract: m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555
Text: Data Sheet D361A Electr oluminescent lectroluminescent Lamp D er IC Drriv iver General Description The Durel D361 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance and simplify the design of EL backlighting systems. The D361 IC and three components
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D361A
D361A
transistor D361
m02 marking transistor
361A MSOP-8
Marking 361A
ke marking transistor
transistor CD 1061
1032 msop
am-1360
Marking 361A 8-MSOP
TDA 5555
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LM565 equivalent
Abstract: missile irig tones ic lm565 LM107 substitution IRIG equivalent schematic of LM107 LM565 IRIG am output circuit IRIG modulator LM1596
Text: INTRODUCTION The phase locked loop has been found to be a useful element in many types of communication systems It is used in two fundamentally different ways 1 as a demodulator where it is used to follow phase or frequency modulation and (2) to track a carrier or synchronizing signal which may
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MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003
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5001C
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors BDB02C PNP Silicon MAXIMUM RATINGS Rating Sym bol Value VCEO -8 0 Vdc C o lle c t o r - B a s e V olta g e VCES -8 0 Vdc E m it t e r - B a s e V o lta g e Vebo - 5 .0 Vdc A de C o lle c to r - E m itte r V oltag e
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BDB02C
5001C
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bux c
Abstract: bux26 npn 10a 800v BUX82 BUX83 Q62901-B11-A Q62901-B20 Q68000-A4676 Q68000-A4677
Text: ESC D • ô23SbG5 OOOHÔbS □ H S I E â BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T ~ 3 3 - Î 3 BUX 8 2 and BUX 8 3 are triple diffused NPN silicon pow er transistors in a case similar to TO 3 3 A 2 DIN 4 1 8 7 2 . The collector is electrically connected to the case. The transistors
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0235bG5
T-33-13
Q68000-A4676
Q68000-A4677
Q62901-B11-A
Q62901-B20
rlmhs50Â
023SbQS
BUX82
bux c
bux26
npn 10a 800v
BUX82
BUX83
Q62901-B11-A
Q62901-B20
Q68000-A4676
Q68000-A4677
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Untitled
Abstract: No abstract text available
Text: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors
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023SbG5
05-KO
BUX83
23SbOS
BUX82
023Sb
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transistor tt 2206
Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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38dBm,
175MHz,
transistor tt 2206
2sc2202
2sc2202 transistor
TT 2206
TT 2206 transistor
hr 2206 cp
2206 CP
2207 7c
138D
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IRFH150
Abstract: UNF 0243 IRFH150 E 9410a 1RFH150 T0210 10S4
Text: H E D § M ÔSS4SE IN T E R N A T IO N A L GOÜ ^blG 2 | Data Sheet No. PD-9.410A j R E C T IF IE R INTERNATIONAL RECTIFIER IO R HEXFET* TRANSISTORS IRFH15Q N-CHANNEL POWER MQSFETs Features: 100 Volt, 0.06 Ohm HEXFET T he HEXFET technology Is the key to International
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IRFH15Ã
G-591
IRFH150
T-39-13
G-592
UNF 0243
IRFH150 E
9410a
1RFH150
T0210
10S4
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g598
Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International
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s54s2
T-39-13
IRFH25Ã
G-597
IRFH250
G-598
g598
irfh260
A220 DLP
100-C
22E8
irfh25u
9411a
G595
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UFN420
Abstract: UFN423 UFN421 UFN422
Text: POWER MOSFET TRANSISTORS UFN420 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roswm and a high transconductance. FEATURES • Fast Switching
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UFN420
UFN422
UFN423
UFN420
UFN421
UFN422
UFN423
UFN421
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Untitled
Abstract: No abstract text available
Text: 2N6751, 2N6752, 2N6753, 2N6754 HARRIS SEMICOND SECTOR File N u m be r SbE 1244 4302271 0040b44 71fi H H A S 5-A S w itc h M a ji Power Transistors • 7 = 3 5 -/? TERMINAL DESIGNATIONS High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage
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2N6751,
2N6752,
2N6753,
2N6754
0040b44
O-204AA
2N6752
2N6754
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Helipot
Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF171
MRF171,
MRF171
AN215A
Helipot
R10K-L.25
7216-R10K-L
motorola an215a
r10kl.25
helipot 7216
R/High frequency MRF transistor
motorola MRF 172
R20KL.25 HELIPOT
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P2QFP100-GH-1420
Abstract: IR 1838 3v with 3 pins
Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with
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DS4375-2
CLA90000
144-ACB-4040
208-ACB-4545
209-ACB-4545
84-ACB-2828
P2QFP100-GH-1420
IR 1838 3v with 3 pins
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DIODE F10
Abstract: f10f10 TRANSISTOR p50
Text: SFH608 Infineon APPLICATIONS Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces Dimensions in inches mm pin one ID f3l Í21 Anode Optocouplers FEATURES • Very High CTR at / F=1.0 mA, VCE=0.5 V - SFH608-2,63-125% - SFH608-3,100-200%
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SFH608
SFH608-2
SFH608-3
SFH608-4
SFH608-5,
Photot2-226
SFH608
1-888-lnfineon
DIODE F10
f10f10
TRANSISTOR p50
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Untitled
Abstract: No abstract text available
Text: 2N6751, 2N6752, 2N6753, 2N6754 File Number 1244 5-A S w itc h M a jf Power Transistors TERMINAL DESIGNATIONS High-Voltage N -P -N Types for 240 V O ff-Line Power Supplies and O ther H igh-Voltage Sw itching Applications Features: • High-temperature parameters guaranteed
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2N6751,
2N6752,
2N6753,
2N6754
O-204AA
ZN6751
2N6752
2N6754SwitchMax
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TRANSISTOR 185 846
Abstract: K 2225 transistor diode rj 93 kd62
Text: POÜJEREX INC m NBŒ X 3*\Z D • 7S b S 1 GDDMS'IM Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 92 5-7 272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43)41.14.14 7 mPRX T '22-25' KD624530 Dual Darlington
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BP107,
KD624530
Amperes/600
BP107
KD624S30
TRANSISTOR 185 846
K 2225 transistor
diode rj 93
kd62
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MH 7472
Abstract: ic 7472 ttl 7472 ttl TTL 7472
Text: SN5472, SN7472 AND-GATED J-K M ASTER-SLAVE FLIP-FLOPS WITH PRESET AND CLEAR DECEMBER 1963 - REVISED MARCH 1988 S N 5 4 7 2 . . J P AC KA G E S N 7 4 7 2 . . . N P AC K A G E Package Options Include Plastic and Ceramic DIPs and Ceramic Flat Packages TO P VIE W
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SN5472,
SN7472
MH 7472
ic 7472 ttl
7472 ttl
TTL 7472
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OPA2662
Abstract: No abstract text available
Text: For Im s ä iite Assistance, Contici Your Local Salesperson BURR-BROWN OPA2662 ADVANCE INFORMATION SUBJECT TO CHANGE Wide Bandwidth, Dual, Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION • 200MHz SMALULARGE SIGNAL BANDWIDTH The OPA2662 is a veisatile driver device for ultrawide bandwidth systems, including high-resolution
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OPA2662
200MHz
OPA2662
16-pin
000V/HS
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RQW200
Abstract: rqw 200 IL204 S03CH 441L204
Text: Section 22 Electrical Characteristics 22.1 Absolute Maximum Ratings Table 22-1 lists the absolute maximum ratings. Table 22-1 Absolute Maximum Ratings Symbol Value ^ ^ , flU n lt ^ v -0 .3 to +7.0 Input voltage except port 4 V in -0 .3 to VCq +0.3 ' ^ Input voltage (port 4)
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44clb204
005D425
RQW200
rqw 200
IL204
S03CH
441L204
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