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    K 2445 TRANSISTOR Search Results

    K 2445 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 2445 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rogers RO4003

    Abstract: PCB Rogers RO4003 Rogers RO4003C ro4003 RO4003C Rogers RO4003* characteristic impedance Ro4003c to FR4 3214W-1-202E BGA7124 GRM1885C1H680JA01D
    Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and


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    PDF BGA7124 BGA7124 Rogers RO4003 PCB Rogers RO4003 Rogers RO4003C ro4003 RO4003C Rogers RO4003* characteristic impedance Ro4003c to FR4 3214W-1-202E GRM1885C1H680JA01D

    A2168

    Abstract: No abstract text available
    Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and


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    PDF BGA7124 BGA7124 A2168

    BGA7124

    Abstract: resistor trimmer 3214W-1-202E GRM1885C1H680JA01D RO4003C rogers* RO4003C
    Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and


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    PDF BGA7124 BGA7124 resistor trimmer 3214W-1-202E GRM1885C1H680JA01D RO4003C rogers* RO4003C

    ro4003

    Abstract: Rogers RO4003 PCB Rogers RO4003 RO4003C BGA7124 GRM1885C1H120JA01D 3214W-1-202E GRM1885C1H680JA01D GRM1885C1H3R3CZ01D 5512 connector molex
    Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and


    Original
    PDF BGA7124 BGA7124 ro4003 Rogers RO4003 PCB Rogers RO4003 RO4003C GRM1885C1H120JA01D 3214W-1-202E GRM1885C1H680JA01D GRM1885C1H3R3CZ01D 5512 connector molex

    a6j* pnp transistor

    Abstract: transistor a6f transistor A6A marking a6a marking a6h A6k SURFACE MOUNT marking A6f transistor A6A 5 transistor A6K transistor a6f motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUH2111LT1 S E R IE S PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Device« This new series of digital transistors is designed to replace a single device and its


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    PDF OT-23 MMUN2111LT1 MMUN2114LT1 a6j* pnp transistor transistor a6f transistor A6A marking a6a marking a6h A6k SURFACE MOUNT marking A6f transistor A6A 5 transistor A6K transistor a6f motorola

    a6j* pnp transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF MMUN2111LT1 OT-23 MMUN2111LT1 MMUN2114LT1 GGT322D a6j* pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola P referred D evices This new series of digital transistors is designed to replace a single device


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    PDF -70/SO T-323 MUN5111T1 MUN5114T1

    TRANSISTOR L 287 A

    Abstract: ma-6008 2SA104 2SA1048 2SC2442 337B
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 930MHz) 930MH* -500mV 300MHz 930MHz TRANSISTOR L 287 A ma-6008 2SA104 2SA1048 2SC2442 337B

    2SB624

    Abstract: 2SD596 F50450
    Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)


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    PDF 100mA) 2SB624 PWS10ms, 2SD596 F50450

    ULN2455A

    Abstract: Integral ULN2455A ULN-2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln
    Text: ULN-2435A, U LN-2445A, ULN-2455A AUTOM OTIVE LAM P MONITORS ULN-2435A, ULN-2445A, AND ULN-2455A AUTOMOTIVE LAMP MONITORS FEATURES • No Standby Power • Integral to Wiring Assem bly • Fall-Safe • Reverse Voltage Protected • Internal Transient Protection


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    PDF ULN-2435A, LN-2445A, ULN-2455A ULN-2445A, -2435A -2445A -2435A ULN2455A Integral ULN2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln

    2SJ45

    Abstract: ct1010 jh074 PA33 9014 transistor 2 SC 9014 BS 5467
    Text: NEC j Junction Field Effect Transistor 2SJ45 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Amplifier #S/FEA TU RES ^H /PACKA G E D IM E N S IO N S Unit : mm O itJIfEE, High gm'C't'o V gdo S4 0 V |y fs | = 9.0 mS T Y P . ( V DS = ~10 V , I D= - 1 .0 m A ,f= 1 .0 kHz)


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    PDF VGdo2540 I-125 SC-43B 2SJ45 ct1010 jh074 PA33 9014 transistor 2 SC 9014 BS 5467

    2SD1518

    Abstract: 5AE0 2SD1581 C3052
    Text: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^


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    PDF 2SD1581 PU0988 2SD1518 5AE0 2SD1581 C3052

    t1c8

    Abstract: 2sk459 2SK45 JE 33 T460
    Text: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f


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    PDF 2SK459 2SK459Ã t1c8 2sk459 2SK45 JE 33 T460

    2SC3733

    Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
    Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier


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    PDF 2SA1460 2SC3733 12/PACKAGE PWS10 CycleS50 2SC3733-T La HL33 2SA1460 IMWS1

    8115, transistor

    Abstract: TFK03 2SC3360 T108
    Text: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS


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    PDF 2SA13301 CycleS50 8115, transistor TFK03 2SC3360 T108

    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


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    PDF 2SK659 2SK659Ã 2SK659 TC-6071

    TRANSISTOR XL08

    Abstract: XL08 tr xl08 988u 2SD1579 T460
    Text: NEC Ì Ì T / \ f S ilic o n Z T r a n s is to r 2SD1579 r N P N X tf 9 3 V 1-7 |J > “ h > - ^ 3 S 5 S ffiJS iftW * i t « , « J S * x iffl NPN Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use 2SD1579ÌÌ 3 V ? 9 •


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    PDF 2SD1579 2SD1579 TRANSISTOR XL08 XL08 tr xl08 988u T460

    2SK426

    Abstract: marking x26 2SK42 9012 transistor
    Text: NEC j m^Tivrx A J u n c tio n Field E ffe c t T ra n s is to r 2SK426 N ^ - t * u =i h - ? > i > x ? N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier 4 $ * / FEATURES ftW M /P A C K A G E DIMENSIONS Unit : mm o i& s t ^ - e t o


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    PDF 2SK426 2SK426 marking x26 2SK42 9012 transistor

    8115, transistor

    Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
    Text: NEC A l i f / v Silicon T ra n sisto r A t z 2SC3209 NPN NPN Silicon Triple Diffused Transistor Chroma Output Use of Color TV or Driver of Horizontal Deflection W-MEE]/ PACKAGE DIMENSIONS ^ /F E A T U R E S U n i t : mm o ifij¡itB E "C o Vcbo —300 V,


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    PDF pk092 8115, transistor 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m

    2SC1622A

    Abstract: No abstract text available
    Text: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm)


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    PDF 2SC1622A 2SC1622A

    stk 2155

    Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
    Text: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f


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    PDF 2SA1460 stk 2155 stk 490 110 2SC3733 transistor NPN 2sc3733 N50M 2sa1460-t

    upa74ha

    Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
    Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )


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    PDF uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor

    NEC .PA1400H

    Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
    Text: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7


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    PDF PA1428H 13X26X4 NEC .PA1400H PA1400H PA1428H TYA 0298 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400

    2SA953

    Abstract: 2SA954 PA33 2sa953 TRANSISTOR
    Text: NEC j m ^ T / v r x '> Y =7 U =3 V Silicon Transistors A 2SA953,954 P N P Silicon Epitaxial T ran sisto r Audio Frequency Am plifier o ¿r— f - i Y ~7 4 ^ < hz O 2S C 2002, 2 0 0 3 ¿ ^ > 7 ° u y > f o S l t P T= E , ì t « h FET " f o mW 600 u t ì è m t ^


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    PDF 2SA953 O-2SC2002, 2SA954 2SA954 PWS10 CycleS50 SC-43B PA33 2sa953 TRANSISTOR