Rogers RO4003
Abstract: PCB Rogers RO4003 Rogers RO4003C ro4003 RO4003C Rogers RO4003* characteristic impedance Ro4003c to FR4 3214W-1-202E BGA7124 GRM1885C1H680JA01D
Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and
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BGA7124
BGA7124
Rogers RO4003
PCB Rogers RO4003
Rogers RO4003C
ro4003
RO4003C
Rogers RO4003* characteristic impedance
Ro4003c to FR4
3214W-1-202E
GRM1885C1H680JA01D
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A2168
Abstract: No abstract text available
Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and
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BGA7124
BGA7124
A2168
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BGA7124
Abstract: resistor trimmer 3214W-1-202E GRM1885C1H680JA01D RO4003C rogers* RO4003C
Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and
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BGA7124
BGA7124
resistor trimmer
3214W-1-202E
GRM1885C1H680JA01D
RO4003C
rogers* RO4003C
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ro4003
Abstract: Rogers RO4003 PCB Rogers RO4003 RO4003C BGA7124 GRM1885C1H120JA01D 3214W-1-202E GRM1885C1H680JA01D GRM1885C1H3R3CZ01D 5512 connector molex
Text: BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and
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BGA7124
BGA7124
ro4003
Rogers RO4003
PCB Rogers RO4003
RO4003C
GRM1885C1H120JA01D
3214W-1-202E
GRM1885C1H680JA01D
GRM1885C1H3R3CZ01D
5512 connector molex
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a6j* pnp transistor
Abstract: transistor a6f transistor A6A marking a6a marking a6h A6k SURFACE MOUNT marking A6f transistor A6A 5 transistor A6K transistor a6f motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUH2111LT1 S E R IE S PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Device« This new series of digital transistors is designed to replace a single device and its
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OT-23
MMUN2111LT1
MMUN2114LT1
a6j* pnp transistor
transistor a6f
transistor A6A
marking a6a
marking a6h
A6k SURFACE MOUNT
marking A6f
transistor A6A 5
transistor A6K
transistor a6f motorola
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a6j* pnp transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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MMUN2111LT1
OT-23
MMUN2111LT1
MMUN2114LT1
GGT322D
a6j* pnp transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola P referred D evices This new series of digital transistors is designed to replace a single device
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-70/SO
T-323
MUN5111T1
MUN5114T1
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TRANSISTOR L 287 A
Abstract: ma-6008 2SA104 2SA1048 2SC2442 337B
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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930MHz)
930MH*
-500mV
300MHz
930MHz
TRANSISTOR L 287 A
ma-6008
2SA104
2SA1048
2SC2442
337B
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2SB624
Abstract: 2SD596 F50450
Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)
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100mA)
2SB624
PWS10ms,
2SD596
F50450
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ULN2455A
Abstract: Integral ULN2455A ULN-2455A 2455A LN-2445A uln drive principle ULN pnp 2445A driver ULN pnp types of uln
Text: ULN-2435A, U LN-2445A, ULN-2455A AUTOM OTIVE LAM P MONITORS ULN-2435A, ULN-2445A, AND ULN-2455A AUTOMOTIVE LAMP MONITORS FEATURES • No Standby Power • Integral to Wiring Assem bly • Fall-Safe • Reverse Voltage Protected • Internal Transient Protection
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ULN-2435A,
LN-2445A,
ULN-2455A
ULN-2445A,
-2435A
-2445A
-2435A
ULN2455A
Integral ULN2455A
2455A
LN-2445A
uln drive principle
ULN pnp
2445A
driver ULN pnp
types of uln
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2SJ45
Abstract: ct1010 jh074 PA33 9014 transistor 2 SC 9014 BS 5467
Text: NEC j Junction Field Effect Transistor 2SJ45 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Amplifier #S/FEA TU RES ^H /PACKA G E D IM E N S IO N S Unit : mm O itJIfEE, High gm'C't'o V gdo S4 0 V |y fs | = 9.0 mS T Y P . ( V DS = ~10 V , I D= - 1 .0 m A ,f= 1 .0 kHz)
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VGdo2540
I-125
SC-43B
2SJ45
ct1010
jh074
PA33
9014 transistor
2 SC 9014
BS 5467
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2SD1518
Abstract: 5AE0 2SD1581 C3052
Text: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^
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2SD1581
PU0988
2SD1518
5AE0
2SD1581
C3052
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t1c8
Abstract: 2sk459 2SK45 JE 33 T460
Text: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f
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2SK459
2SK459Ã
t1c8
2sk459
2SK45
JE 33
T460
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2SC3733
Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier
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2SA1460
2SC3733
12/PACKAGE
PWS10
CycleS50
2SC3733-T
La HL33
2SA1460
IMWS1
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8115, transistor
Abstract: TFK03 2SC3360 T108
Text: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS
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2SA13301
CycleS50
8115, transistor
TFK03
2SC3360
T108
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2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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2SK659
2SK659Ã
2SK659
TC-6071
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TRANSISTOR XL08
Abstract: XL08 tr xl08 988u 2SD1579 T460
Text: NEC Ì Ì T / \ f S ilic o n Z T r a n s is to r 2SD1579 r N P N X tf 9 3 V 1-7 |J > “ h > - ^ 3 S 5 S ffiJS iftW * i t « , « J S * x iffl NPN Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use 2SD1579ÌÌ 3 V ? 9 •
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2SD1579
2SD1579
TRANSISTOR XL08
XL08
tr xl08
988u
T460
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2SK426
Abstract: marking x26 2SK42 9012 transistor
Text: NEC j m^Tivrx A J u n c tio n Field E ffe c t T ra n s is to r 2SK426 N ^ - t * u =i h - ? > i > x ? N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier 4 $ * / FEATURES ftW M /P A C K A G E DIMENSIONS Unit : mm o i& s t ^ - e t o
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2SK426
2SK426
marking x26
2SK42
9012 transistor
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8115, transistor
Abstract: 7011 NPN TRANSISTOR 2SC3209 NPN Transistor SE5010 2SC3209 T108 8115 TRANSISTOR 26236 2083m
Text: NEC A l i f / v Silicon T ra n sisto r A t z 2SC3209 NPN NPN Silicon Triple Diffused Transistor Chroma Output Use of Color TV or Driver of Horizontal Deflection W-MEE]/ PACKAGE DIMENSIONS ^ /F E A T U R E S U n i t : mm o ifij¡itB E "C o Vcbo —300 V,
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pk092
8115, transistor
7011 NPN TRANSISTOR
2SC3209 NPN Transistor
SE5010
2SC3209
T108
8115 TRANSISTOR
26236
2083m
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2SC1622A
Abstract: No abstract text available
Text: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm)
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2SC1622A
2SC1622A
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stk 2155
Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t
Text: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 |iiii X 'f
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2SA1460
stk 2155
stk 490 110
2SC3733
transistor NPN 2sc3733
N50M
2sa1460-t
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upa74ha
Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )
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uPA74HA
UPA74
PA74H
gw 348
PA74HA
k 2445 transistor
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NEC .PA1400H
Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
Text: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7
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PA1428H
13X26X4
NEC .PA1400H
PA1400H
PA1428H
TYA 0298
NEC PA1400H
uPA1428H
0CJA
pa-1400
PA1400
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2SA953
Abstract: 2SA954 PA33 2sa953 TRANSISTOR
Text: NEC j m ^ T / v r x '> Y =7 U =3 V Silicon Transistors A 2SA953,954 P N P Silicon Epitaxial T ran sisto r Audio Frequency Am plifier o ¿r— f - i Y ~7 4 ^ < hz O 2S C 2002, 2 0 0 3 ¿ ^ > 7 ° u y > f o S l t P T= E , ì t « h FET " f o mW 600 u t ì è m t ^
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2SA953
O-2SC2002,
2SA954
2SA954
PWS10
CycleS50
SC-43B
PA33
2sa953 TRANSISTOR
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