k 1535
Abstract: 2sc2373
Text: JMnic Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION
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2SC2373
O-220
k 1535
2sc2373
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2sc2373
Abstract: k 1535
Text: SavantIC Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications PINNING
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2SC2373
O-220
2sc2373
k 1535
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2SC2373
Abstract: k 1535 30ma 40v npn 2SC237
Text: Inchange Semiconductor Product Specification 2SC2373 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in horizontal deflection output for B/W TV applications
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2SC2373
O-220
2SC2373
k 1535
30ma 40v npn
2SC237
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IC 4047
Abstract: K 2545 transistor IC 4047 BE ic 4047 datasheet data sheet of IC 4047 HSC2625S
Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 1/2 MICROELECTRONICS CORP. HSC2625S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2625S is designed for use in general purpose amplifier and switching applications.
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HSC2625S
HSC2625S
IC 4047
K 2545 transistor
IC 4047 BE
ic 4047 datasheet
data sheet of IC 4047
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4-BIT BINARY TO THERMOMETER encoder
Abstract: 4064B MSM64164C QFP80-P-1420-0
Text: MSM64164C 4-Bit Microcontroller User’s Manual FIRST EDITION December 1998 OKI ELECTRIC INDUSTRY CO., LTD. E2Y0002-28-41 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information
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MSM64164C
E2Y0002-28-41
Appendix-80
MSM64164C
Appendix-81
Appendix-82
4-BIT BINARY TO THERMOMETER encoder
4064B
QFP80-P-1420-0
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4064B
Abstract: MSM64164C QFP80-P-1420-0 Transistor circuits alarm K 2545
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Appendix-80
MSM64164C
Appendix-81
Appendix-82
4064B
QFP80-P-1420-0
Transistor circuits alarm K 2545
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u 4064b
Abstract: 4064B MSM64164C QFP80-P-1420-0
Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MSM64164C
E2Y0002-28-41
Appendix-80
MSM64164C
Appendix-81
Appendix-82
u 4064b
4064B
QFP80-P-1420-0
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MO-229 footprint
Abstract: LX13043CLD transistor 33825 MO-229
Text: LX13043 1.0A Low Dropout Regulator TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The LX13043 features on-chip trimming of the internal voltage enabling precise output voltages. The BiPolar output transistor has a low dropout voltage even at full output
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LX13043
LX13043
tanta21,
MO-229 footprint
LX13043CLD
transistor 33825
MO-229
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Untitled
Abstract: No abstract text available
Text: PTAC260302SC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302SC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W main and a
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PTAC260302SC
PTAC260302SC
30-watt
H-37248H-4
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LM158
Abstract: lm358 sum DATASHEET IC LM358 LM158A LM258 LM258A LM258N LM358 LM358A transistor 2n 929
Text: LM158,A-LM258,A LM358,A LOW POWER DUAL OPERATIONAL AMPLIFIERS . . . . . . . . INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB WIDE BANDWIDTH unity gain : 1.1MHz (temperature compensated) VERY LOW SUPPLY CURRENT/AMPLI (500µA) - ESSENTIALLY INDEPENDENT OF
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LM158
-LM258
LM358
100dB
lm358 sum
DATASHEET IC LM358
LM158A
LM258
LM258A
LM258N
LM358A
transistor 2n 929
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MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003
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LM158
Abstract: LM1581 LM358 equivalent of IC LM358 lm358 sum at powersupply schematic DATASHEET IC LM358 ic lm258n lm358 thomson LM158A
Text: LM158,A-LM258,A LM358,A LOW POWER DUAL OPERATIONAL AMPLIFIERS . . . . . . . . INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB WIDE BANDWIDTH unity gain : 1.1MHz (temperature compensated) VERY LOW SUPPLY CURRENT/AMPLI (500µA) - ESSENTIALLY INDEPENDENT OF
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LM158
-LM258
LM358
100dB
LM1581
LM358 equivalent
of IC LM358
lm358 sum
at powersupply schematic
DATASHEET IC LM358
ic lm258n
lm358 thomson
LM158A
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Pan Overseas
Abstract: 25AT 2SA160H
Text: F 2 S A 1 6 0 iJ / 2 S C 4 1 5 6 No.2545 PNP/NPN E p i t a x i a l P l a n a r Type S ilico n Transistors Hi g h - S peed S w i t c h i n g .A p p l i cations IT .j # X. .Ÿ$£' X<#W ^aatures « ♦ Adoption of FBET process Jl . High breakdown voltage Vq£q =(- 50V)
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2SA1604
2SC4156
2SA160H
100mA
c3100114*
Pan Overseas
25AT
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TRANSISTOR D2545
Abstract: D2545 2005A TRANSISTOR IFW Transistor BC 227 d2545 transistor Sanyo 2SA1604 2SC4156
Text: i’,ang^ffìTa»eaaer?iaa SANYO SEMICONDUCTOR CORP 32E D 7 ^ 7 0 7 ^ OOOfiTOfl 7 B \T-3S-27 r - 3 7 - 2 7 PN P /N PN Epitaxial Planar Silicon Transistors 2029A High-Speed Switching Applications 2545 Features . Adoption of FBET process . High breakdown voltage VCEO=(- 50V)
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r-37-27
D2545
2SA1604
T-91-20
SC-43
TRANSISTOR D2545
D2545
2005A
TRANSISTOR IFW
Transistor BC 227
d2545 transistor
Sanyo
2SC4156
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2SA1090
Abstract: TE 2556 P17W 25p8 2SA1081 2SA1082 2SA1083 2SA1084 2SA1085 2SC2532
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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860MHz,
2SA1090
TE 2556
P17W
25p8
2SA1081
2SA1082
2SA1083
2SA1084
2SA1085
2SC2532
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K 2545 transistor
Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S
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BF421S
BF420S
BF423S
150K/W
T0126
15A3DIN
K 2545 transistor
41 BF transistor
transistor bf 422
transistor BF 606
BF 830 transistor
transistor marking code 41 BF
transistors bf 423
BF423S
Transistor marking code K
transistor BF 423
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sab 3013
Abstract: IC tda 1571 TDA1506 sab3013 SAA5051 SAB3034 SAF 3019 Tda1533 SAA 1059 valvo halbleiter
Text: Elektronik. Wir bauen die Elemente. V A m Integrierte Schaltungen für die Unterhaltungselektronik Produktprogram m t IT 1. A pril 1983 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich im m er rascher zum Motor für eine
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Vertrieb-117
OT-124
OT-138
OT-150
OT-32
OT-110
OT-131
OT-141
OT-108
OT-109
sab 3013
IC tda 1571
TDA1506
sab3013
SAA5051
SAB3034
SAF 3019
Tda1533
SAA 1059
valvo halbleiter
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motorola 7673 A
Abstract: LA 7673 motorola 7673 b Motorola 8039
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF957T1 The RF Line NPN Silicon Low Noise, High-Frequency Transistor Iq = 100 m A LO W NO ISE H IG H -FR E Q U EN C Y TR A N SIS TO R D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is
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MRF957T1
Collector-Em96
MRF957T1
motorola 7673 A
LA 7673
motorola 7673 b
Motorola 8039
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LA 3660
Abstract: 32-bit shift register DST1
Text: S-7180A 32-bit THERMAL HEAD DRIVER The S-7180A is a thermal print head driver, consisting of a CMOS 32-bit shift re g iste r with s e ria l input and serial/parallel output, a C M O S 32-bit latch and 32 Nch opendrain drivers. It directly drives a thin film or a thick
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S-7180A
32-bit
S-7180A
A123443
LA 3660
32-bit shift register
DST1
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HA3-5147-5
Abstract: HA2-5147-5 HA7-5147-2 HA2-5147-2
Text: m HA-5147 HARRIS S E M I C O N D U C T O R Ultra-Low Noise Precision High Slew Rate Wideband Operational Amplifier March 1993 Features Description • • Wide Gain Bandwidth Av ¿ 1 0 .120MHz
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HA-5147
HA-5147
120MHz)
800V/mV)
126dB)
140mW
00V/V
002jiV/Div.
HA-5147,
HA-5147A
HA3-5147-5
HA2-5147-5
HA7-5147-2
HA2-5147-2
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MRF581A
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion
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MRF581
MRF581A
MRF5812,
56-590-65/3B
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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TE 2549 MOTOROLA
Abstract: MRF581A motorola MRF5812 RF581 MRF581
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF581 MRF581A MRF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •
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MRF5812
MRF581
MRF581A
MRF5812,
TE 2549 MOTOROLA
motorola MRF5812
RF581
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IC LM331
Abstract: LM331H IC LM331 model LM331AH IC LM331 operation LM331 f to v converter LM231H 56805 LM231AH LM331
Text: SflE D NATL SEMICOND LINEAR LM131A/LM131, LM231A/LM231, LM331A/LM331 Precision Voltage-to-Frequency Converters General Description The LM131/LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low-cost cir cuits for analog-to-digital conversion, precision frequencyto-voltage conversion, long-term integration, linear frequen
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b501124
LM131A/LM131/LM231A/LM231/LM331A/LM331
LM131A/LM131,
LM231A/LM231,
LM331A/LM331
LM131/LM231/LM331
TL/H/5680-20
TL/H/5680-21
LM131AH,
LM131H,
IC LM331
LM331H
IC LM331 model
LM331AH
IC LM331 operation
LM331 f to v converter
LM231H
56805
LM231AH
LM331
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