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    K 3113 Search Results

    K 3113 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3113-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3Z, /Bag Visit Renesas Electronics Corporation
    2SK3113B-ZK-E1-AY Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3113(0)-Z-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    ISL43113IBZ Renesas Electronics Corporation Low-Voltage, Dual Supply, SPST, High Performance Analog Switches, SOICN, /Tube Visit Renesas Electronics Corporation
    ISL43113IHZ-T Renesas Electronics Corporation Low-Voltage, Dual Supply, SPST, High Performance Analog Switches Visit Renesas Electronics Corporation
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    K 3113 Price and Stock

    Rochester Electronics LLC 2SK3113(0)-Z-E1-AZ

    N-CHANNEL POWER MOSFET SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3113(0)-Z-E1-AZ Bulk 4,000 199
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    Rochester Electronics LLC 2SK3113-ZK-E2-AZ

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3113-ZK-E2-AZ Bulk 2,500 254
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    Rochester Electronics LLC 2SK3113-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK3113-AZ Bulk 1,828 254
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    Rochester Electronics LLC 2SK3113-Z-E1-AZ

    SMALL SIGNAL FET
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    DigiKey 2SK3113-Z-E1-AZ Bulk 1,025 254
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    Fischer Elektronik GmbH & Co KG MK-31-13-Z

    FOR 0.5 MM
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    DigiKey MK-31-13-Z Bulk 10
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    Find more K 3113 price and stock on Findchips.com

    K 3113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rs 5493 data sheet

    Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. rs 5493 data sheet transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026

    5252 F 0911

    Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor

    5252 F 0918

    Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS C-0100. 5252 F 0918 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003

    5252 F 0911

    Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917

    5252 F 0911

    Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
    Text: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-C-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003

    HO7V-K

    Abstract: HO5V-K IEC 228 DIN VDE 0281-5 DIN 57281 H07V-K IEC228 IEC-228 HD-21
    Text: HOOK-UP WIRE HAR: HD 21.5 HO5V-K HO7V-K PVC INSULATION HARMONIZED CHOOSE HARMONIZED HOOK-UP WIRE FOR: Installation in Electronic and Electrical Equipment Designed For Use in Europe • Mandatory Conformance to CENELEC Guidelines ■ Applications Where Flexible, European-Compliant Hook-Up


    Original     		PDF H05V-K; H07V-K; 73/23/EEC 93/68/EEC HO7V-K HO5V-K IEC 228 DIN VDE 0281-5 DIN 57281 H07V-K IEC228 IEC-228 HD-21

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62126ESL 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62126ESL 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (I/O0


    Original     		PDF CY62126ESL I/O15)

    5252 F 0911

    Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
    Text: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable


    Original     		PDF MIL-C-39003 Symbol185K035BS T256B825K035BS T256B106K035BS T256C336K035BS T256C396K035BS T256C476K035BS T256D566K035BS T256D686K035BS T256A125K050BS 5252 F 0911 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (I/O0


    Original     		PDF CY62126ESL 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		PDF CY62126EV30 CY62126DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		PDF CY62126EV30 CY62126DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E

    Untitled

    Abstract: No abstract text available
    Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15)

    AN1384

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15) 727-CY26EV30LL45ZSXI CY62126EV30LL-45ZSXI AN1384

    Untitled

    Abstract: No abstract text available
    Text: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62128E

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: r& T O K O T K 10840 MULTIPLEX AUDIO SIGNAL RESTORER FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Low Voltage Operation PLL Demodulation Two-Level Conversion Circuit Multiplex Detection Level Variation Circuit Active Filter Operational Amplifier


    OCR Scan     		PDF TK10840M TK10840 20-pin TPC27 TPC30 TPC31 TPC32

    Halbleiterbauelemente DDR

    Abstract: VEB mikroelektronik aktive elektronische bauelemente ddr information applikation information applikation mikroelektronik Mikroelektronik Information Applikation mikroelektronik DDR SMY50 mikroelektronik applikation "Mikroelektronik" Heft
    Text: Information Applikation Fïn]o i=3rn(s]eiel-ctenoriil-c Information Applikation H E F T 56 : Verhalten von Elektronischen Baueleaenten bei E S D (Electrostatic discharge -Physikalische Grundlagen-Wi^kungen-Maßnahmen zum Schutz vor ESD- veb halbJoiterwork fronkfurt /oderb e t r ie b im v e b k o m b in a t m ik r o o t a k t r o m k


    OCR Scan     		PDF

    ta 8268 ah

    Abstract: No abstract text available
    Text: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:


    OCR Scan     		PDF CSR13 MIL-C-39003/01) non-con68 CSR13J394K* CSR13J474K* CSR13J474M* CSR13J564K* CSR13J684K* CSR13J684M* CSR13J824K* ta 8268 ah

    LT3973-3.3

    Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
    Text: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7


    OCR Scan     		PDF 07262M 09356K07 09462K07 09566M 07264M 09357K07 09462M 09567K07 07362M 09358K07 LT3973-3.3 L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3

    136CPL

    Abstract: maxim ICL7136
    Text: y k i y j x i y k i Low Pow er, 3Va D ig it A /D C o n verter W ith D isp lay H old _General Description _Features The M axim MAX136 is a m o n o lith ic analog to digital converter w ith very high input impedance. It differs


    OCR Scan     		PDF MAX136 ICL7136 ICL7116 136CPL maxim ICL7136