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    K 3505 TRANSISTOR Search Results

    K 3505 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 3505 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC100B101FT500XT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S38075HR3 MRF7S38075HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S38075H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38075HR3 MRF7S38075HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S38075H MRF7S38075HR3 MRF7S38075HSR3 MRF7S38075HR3 ATC100B101FT500XT A114 A115 AN1955 C101 JESD22 MRF7S38075HSR3 Nippon capacitors Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S38075H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38075HR3 MRF7S38075HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


    Original     		PDF MRF7S38075H MRF7S38075HR3 MRF7S38075HSR3 MRF7S38075HR3

    bpw 104

    Abstract: foto transistor k 4110 BPW 34 photo K 3505 transistor transistor 309 BPW 14 A IC 314 BP 104 FAS foto transistor
    Text: SI-FOTODETEKTOREN TYPENÜBERSICHT S -F I SILICON PHOTODETECTORS OTODETEKTOREN, OPTISCHE SENSOREN 1. Foto IC für Fernsteuerung SFH 5110 SUMMARY OF TYPES (S PHOTODETECTORS, OPTICAL SENSORS) 1. Photo IC for Remote Control SFH 5410 SFH 5111 2. Fotodetektoren in SMT


    Original     		PDF

    KEP62

    Abstract: Variable Resistor 3305
    Text: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS 100EP16 EP16VS MC100EP16VS AND8020 KEP62 Variable Resistor 3305

    KEP62

    Abstract: MC100 MC100EP16VS MC100EP16VSD Variable Resistor 3305
    Text: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS MC100EP16VS/D KEP62 MC100 MC100EP16VSD Variable Resistor 3305

    Untitled

    Abstract: No abstract text available
    Text: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS 100EP16 EP16VS r14525 MC100EP16VS/D

    KEP62

    Abstract: KP62 MC100 MC100EP16VS MC100EP16VSD
    Text: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS r14525 MC100EP16VS/D KEP62 KP62 MC100 MC100EP16VSD

    KEP62

    Abstract: MC100 MC100EP16VS MC100EP16VSD Variable Resistor 3305
    Text: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS r14525 MC100EP16VS/D KEP62 MC100 MC100EP16VSD Variable Resistor 3305

    Untitled

    Abstract: No abstract text available
    Text: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS MC100EP16VS/D

    KEP62

    Abstract: MC100EP16VS
    Text: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS MC100EP16VS/D KEP62

    DFN8

    Abstract: KEP62 MC100EP16VS 2105 SOIC8
    Text: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS MC100EP16VS/D DFN8 KEP62 2105 SOIC8

    J 3305

    Abstract: KEP62 MC100EP16VS
    Text: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.


    Original     		PDF MC100EP16VS MC100EP16VS 100EP16 EP16VS MC100EP16VS/D J 3305 KEP62

    2520P

    Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant


    Original     		PDF 40-T1 70-T1 70B-HP HPAC140 2520P schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420

    fototransistor BPW 39

    Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
    Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.


    Original     		PDF EN60825-1 GETY6091 GPLY6899 GPLY6880 fototransistor BPW 39 fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor

    2N918

    Abstract: 2N4033
    Text: continued >cc <—1 oa. w0 JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > CU E A3 UoJ > X U_a. X <o E no o0 (continued) o0 ID CM II @ 5 I - PACKAG E TYPE General purpose amplifiers and switches f T min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300


    OCR Scan     		PDF T0-18 2N918 2N4033

    2N3930

    Abstract: 2N4033
    Text: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300


    OCR Scan     		PDF T0-18 2N3930 2N4033

    2N3503

    Abstract: 2N3504a 2n3504 0732N
    Text: TYPES 2N3502 THRU 2N3505 P-N-P SILICON TRANSISTORS B U L L E T IN N O . DL-S 6 6 8 2 7 8 , M A R C H 1966 FULLY CHARACTERIZED FOR HIGH-SPEED, LOW-NOISE, MEDIUM-POWER SWITCHING AND GENERAL-PURPOSE AMPLIFIER APPLICATIONS • hF[ Guaranteed from 10 ¿¿A to 500 mA


    OCR Scan     		PDF 2N3502 2N3505 2N3503 2N3504a 2n3504 0732N

    S7190A

    Abstract: SI 3205
    Text: S-7190A 64-bit THERMAL HEAD DRIVER The S-7190A is a thermal print head driver, consisting of a CMOS 64-bit shift reg iste r with s e ria l input and serial/parallel output, a C M O S 64-bit latch and 64 Nch opendrain drivers. It directly drives a thin film or a thick


    OCR Scan     		PDF S-7190A 64-bit S-7190A DDG301fi S7190A SI 3205

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		PDF 2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500

    Untitled

    Abstract: No abstract text available
    Text: • • • • • Precision engineered, “closed entry” contacts Space saving design for high density packaging Micro jacks are available for mating with .015 to .082 diameter pins and leads Beryllium Copper multi-spring contact maintains retention after multiple insertions


    OCR Scan     		PDF ASTM-B16 QQ-C-533) MIL-G-45204, Tt028

    Untitled

    Abstract: No abstract text available
    Text: M M O T O R O L A - Pulse W idth Modulation Control C ircuit The SG3526 is a high performance pulse width modulator integrated circuit intended for fixed frequency switching regulators and other power control applications. Functions included in this 1C are a temperature compensated voltage


    OCR Scan     		PDF SG3526 b3b7253 SG3526 b3b7253

    N493

    Abstract: basf 100cjd
    Text: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)


    OCR Scan     		PDF BUX47 BUX47A N493 basf 100cjd

    SG3526

    Abstract: tzn 7 sg3526 pwm power supply sg3526 power supply 12v dc power supply with sg3526 application note sg3526 sg3526 dc dc applications SG3526N SG3S26 sg3s
    Text: M M O TO R O LA — — Pulse W id th M o d u latio n C ontrol C irc u it The SG3526 is a high performance pulse width modulator integrated circuit intended for fixed frequency switching regulators and other power control applications. _ _ Functions included in this 1C are a temperature compensated voltage


    OCR Scan     		PDF SG3526 12VO- SG3526 SG3S26 tzn 7 sg3526 pwm power supply sg3526 power supply 12v dc power supply with sg3526 application note sg3526 sg3526 dc dc applications SG3526N SG3S26 sg3s

    HA2-5195-5

    Abstract: HA2-5190-2 5195-5 HA5190-2
    Text: h a r r is S E M I C O N D U C T O R HA-5190,J HA-5195 " 150MHz, Fast Settling Operational Amplifiers N o vem b er 1996 Description Features • Fast Settling Time 0 .1 % . • Very High Slew R a te . 200V/ns


    OCR Scan     		PDF HA-5190, HA-5195 150MHz, HA-5195 483nm HA-5190 HA2-5195-5 HA2-5190-2 5195-5 HA5190-2