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    K 4070 Price and Stock

    Rochester Electronics LLC 2SK4070-ZK-E2-AY

    N-CHANNEL MOSFET
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    DigiKey 2SK4070-ZK-E2-AY Bulk 2,500 541
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    VPG Transducers Y144235K4070T0L

    RES 35.407KOHM 1/2W 0.01% RADIAL
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    Vishay Dale RNC55K4070DMRSL

    RES 407 OHM 0.5% 1/8W AXIAL
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    DigiKey RNC55K4070DMRSL Reel 1,000
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    Vishay Dale RNC55K4070DMBSL

    RES 407 OHM 0.5% 1/8W AXIAL
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    Vishay Dale RNC55K4070DMB14

    RES 407 OHM 0.5% 1/8W AXIAL
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    K 4070 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726 L 4-K/H/L DESCRIPTION Hynix HYMD264G726(L)4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726(L)4-K/H/L series


    Original     		PDF 64Mx72 HYMD264G726 184-pin 64Mx4 400mil 184pin

    Untitled

    Abstract: No abstract text available
    Text: 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726 L 4-K/H/L DESCRIPTION Hynix HYMD264G726(L)4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726(L)4-K/H/L series


    Original     		PDF 64Mx72 HYMD264G726 184-pin 64Mx4 400mil 184pin

    Untitled

    Abstract: No abstract text available
    Text: 64Mx72 bits Registered DDR SDRAM DIMM HYMD564G726 L 8-K/H/L DESCRIPTION Preliminary Hynix HYMD564G726(L)8-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD564G726(L)8-K/H/L


    Original     		PDF 64Mx72 HYMD564G726 184-pin 64Mx8 400mil 184pin

    ILI 5960

    Abstract: No abstract text available
    Text: 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726 L 4-K/H/L DESCRIPTION Hynix HYMD264G726(L)4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726(L)4-K/H/L


    Original     		PDF 64Mx72 HYMD264G726 184-pin 64Mx4 400mil 184pin ILI 5960

    Untitled

    Abstract: No abstract text available
    Text: 64Mx72 bits Registered DDR SDRAM DIMM HYMD564G726 L 8-K/H/L DESCRIPTION Preliminary Hynix HYMD564G726(L)8-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD564G726(L)8-K/H/L


    Original     		PDF 64Mx72 HYMD564G726 184-pin 64Mx8 400mil 184pin

    3ADW000095R0701 DCS400 MANUAL E G

    Abstract: ktk variable speed thyristor controller ABB make REC 670 ktk thyristor dc drives manual DCS401 manual temperature controller CHB 702 30 KW 1500rpm ABB DC motor DCS402 abb contactor K22 Project Report of fire alarm using thermistor
    Text: DCS Thyristor power converter for DC drive systems 20 to 1000 A 9 to 522 kW Manual DCS 400 II K 1-1 This manual is valid for DCS 400 Rev A including software version 108.0 List of contents MANUAL 1 DCS 400 - the compact-size DC drive . II K 1-3 2 System overview of DCS 400 . II K 2-1


    Original     		PDF NCNA-01, 3ADW000095R0701 DCS400 R0701 095R0701A3180000* 3ADW000095R0701 DCS400 MANUAL E G ktk variable speed thyristor controller ABB make REC 670 ktk thyristor dc drives manual DCS401 manual temperature controller CHB 702 30 KW 1500rpm ABB DC motor DCS402 abb contactor K22 Project Report of fire alarm using thermistor

    rs 5493 data sheet

    Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. rs 5493 data sheet transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026

    5252 F 0911

    Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor

    5252 F 0918

    Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS C-0100. 5252 F 0918 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003

    5252 F 0911

    Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917

    Untitled

    Abstract: No abstract text available
    Text: 32Mx72 bits Registered DDR SDRAM DIMM HYMD132G725B L 4-M/K/H/L DESCRIPTION Hynix HYMD132G725B(L)4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD132G725B(L)4M/K/H/L series consists of eighteen 32Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD132G725B(L)4-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.


    Original     		PDF 32Mx72 HYMD132G725B 184-pin 32Mx4 400mil 184pin

    5252 F 0911

    Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
    Text: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-C-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003

    Untitled

    Abstract: No abstract text available
    Text: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1370D, CY7C1372D 18-Mbit 250-MHz

    Untitled

    Abstract: No abstract text available
    Text: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1370DV25 CY7C1372DV25 18-Mbit 200-MHz

    Untitled

    Abstract: No abstract text available
    Text: CY7C1370D CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™ ■


    Original     		PDF CY7C1370D CY7C1372D 18-Mbit 250-MHz

    Untitled

    Abstract: No abstract text available
    Text: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™


    Original     		PDF CY7C1370DV25 CY7C1372DV25 18-Mbit 200-MHz

    5252 F 0911

    Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
    Text: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable


    Original     		PDF MIL-C-39003 Symbol185K035BS T256B825K035BS T256B106K035BS T256C336K035BS T256C396K035BS T256C476K035BS T256D566K035BS T256D686K035BS T256A125K050BS 5252 F 0911 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor

    Untitled

    Abstract: No abstract text available
    Text: 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD264G726 L 4M-K/H/L DESCRIPTION Hynix HYMD264G726(L)4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix


    Original     		PDF 64Mx72 HYMD264G726 184-pin 64Mx4 400mil 184pin

    DELTA 713

    Abstract: DDR200 DDR266A DDR266B
    Text: 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD564G726 L 8M-K/H/L DESCRIPTION Preliminary Hynix HYMD564G726(L)8M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix


    Original     		PDF 64Mx72 HYMD564G726 184-pin 64Mx8 400mil 184pin DELTA 713 DDR200 DDR266A DDR266B

    Untitled

    Abstract: No abstract text available
    Text: 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD564G726 L 8M-K/H/L DESCRIPTION Preliminary Hynix HYMD564G726(L)8M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix


    Original     		PDF 64Mx72 HYMD564G726 184-pin 64Mx8 400mil 184pin

    ILI 5960

    Abstract: DDR200 DDR266A DDR266B
    Text: 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD264G726 L 4M-K/H/L DESCRIPTION Hynix HYMD264G726(L)4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix


    Original     		PDF 64Mx72 HYMD264G726 184-pin 64Mx4 400mil 184pin ILI 5960 DDR200 DDR266A DDR266B

    Untitled

    Abstract: No abstract text available
    Text: 256Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD525G726 L S4M-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix


    Original     		PDF 256Mx72 HYMD525G726 184-pin 128Mx4 400mil 184pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C1371D CY7C1373D 18-Mbit 512 K x 36/1 M × 18 Flow-Through SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency (NoBL) architecture eliminates dead cycles


    Original     		PDF CY7C1371D CY7C1373D 18-Mbit 133-MHz

    ILI 5960

    Abstract: No abstract text available
    Text: 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD264G726 L 4M-K/H/L DESCRIPTION Hynix HYMD264G726(L)4M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix


    Original     		PDF 64Mx72 HYMD264G726 184-pin 64Mx4 400mil 184pin ILI 5960