Contextual Info: K04-022 Package Type: 48-Lead Plastic Dual In-line P - 600 mil E D a 2 1 n A1 E1 A R c B1 b A2 eB Units Dimension Limits PCB Row Spacing Number of Pins Pitch Lower Lead Width Upper Lead Width Shoulder Radius Lead Thickness Top to Seating Plane Top of Lead to Seating Plane

tip 3035 transistor

Abstract: QCI-39000 44l 400 mil Tsop 2 II
Contextual Info: M SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 59

Contextual Info: K04-023 Package Type: 32-Lead Plastic Leaded Chip Carrier L - Rectangle E1 E #leads=n1 D D1 n 12 CH2 x 45 ° CH1 x 45 ° a A3 L R1 A1 c 32 ° A B1 R2 B p A2 b E2 Units Dimension Limits Number of Pins Pitch Overall Pack. Height Shoulder Height Standoff Side 1 Chamfer Dim.

Contextual Info: 27C512A 512K 64K x 8 CMOS EPROM PACKAGE TYPES FEATURES • High speed performance PLCC co in ^ co i - 3—, oo i— i— < i<- < z > << • CMOS Technology for low power consumption /LtÌL?M"ÌtéÌL2ÌÌ.2Ì A8 A9 II < fe A11 CM L2 -6 - NC ID \-= A10 O

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES PACKAGETYPES h. o o => 8 |!±j o • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years

200B

Abstract: 28C17A
Contextual Info: ^ÊÊÊÊÈ.^- & M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years

Contextual Info: M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles

28C17A

Contextual Info: ^ÊÊÊÊÈ.^- & M ic r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write

28C04A

Abstract: 28C04A-15 28C04A-20 28C04A-25
Contextual Info: / M i c r o c h 28C04A i p 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPES • Fast R ead A c c e s s T im e — 1 50 ns O ' A7 r • 1 24 - 3 0 m A A ctive - 100 jiA S ta n d b y A 5Ü 3 A 4C 4 22 H N C • D a ta R eten tio n > 2 0 0 ye ars A 2Ü 6 AIT 7

Contextual Info: K04-026 Package Type: 28-Lead Plastic Leaded Chip Carrier L - Square E1 E #leads=n1 D D1 a n 1 2 CH2 x 45 ° CH1 x 45 ° A3 L R1 32 ° A1 c A B1 R2 B b A2 p E2 Units Dimension Limits Number of Pins Pitch Overall Pack. Height Shoulder Height Standoff Side 1 Chamfer Dim.

28CXX

Abstract: 1117 TO92
Contextual Info: M PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Mircocontroller Products

Contextual Info: 4 2 9 6 - 0 5 SE R IE S B TO B 0.5 PITCH FEMALE 0.5mm B TO B SERIES MATING HEIGHT UNIT:mm H =3.5 X H=3.0 H=4.0 in H=2.0 II 4 2 9 6 -1 5 *0 4 2 9 6 -1 0 II 2 8 5 1 -0 5 4 2 9 6 -0 5 <N 2 8 5 1 -0 1 4 2 9 6 -0 1 X REMALE CONN MALE C O N N ~'~~~ ~~ ^ H=5.0 CONNECTOR

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles

Ic 7423

Abstract: tip 3035 transistor ic SL 1626 31.76 DS00049 R0026
Contextual Info: M PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Mircocontroller Products

TC 3162

Contextual Info: /M i c r o c h 28C04A i p 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Tim e— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte W rite Tim e— 200 us or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/W rite Cycles

K04-023

Abstract: DS11020G
Contextual Info: 27LV256 256K 32K x 8 Low-Voltage CMOS EPROM PACKAGE TYPES FEATURES • Wide voltage range 3.0V to 5.5V PDIP • High speed performance - 200 ns access time available at 3.0V Vpp H • 1 28 H Vcc A12 C 2 27 H A14 A7 H 3 26 H A13 A6 C 4 25 H A8 A5 C 5 • CMOS Technology for low power consumption

WPCT

Abstract: 41a1242 MX25L1605AM lenovo mx25l1605am2 toshiba c850 ICS9LPRS ru52 lenovo t42 bd4176
Contextual Info: March '18 Intel Merom NV/LV/ULV Processor 3,4 Clock Generator CK-505 18 AGTL+ FSB DDR2 533/667MHz Channel B 5 Bus Switch IC 54 L3:Signal 1 Project Code: 91.4B401.001 PCB Raw Card : 12.1'' XGA LCD L4:VCC L5:Signal 2 19 L6:Signal 3 Media Slice 47 CRT SELECTION

WISTRON power sequence

Abstract: lenovo wistron 82566MC SCD01U16V2KX-3GP 32c450 33R2J-2-GP VCC3M wistron ks-3 block diagram c154 sf lf
Contextual Info: March '18 Intel Merom NV/LV/ULV Processor 3,4 Clock Generator CK-505 18 AGTL+ FSB DDR2 533/667MHz Channel B CRT I/F 8,9,10,11,12,13 DMI x4 Media Slice 47 I2C Bus / SM Bus Bus Switch IC 54 SATA HDD Board to Board CONN 45 IDE I/F 12.1'' XGA LCD Intel ICH8-M

vsop 18

Contextual Info: M PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Mircocontroller Products