Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13
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QS8K13
QS8K13
Pw10s,
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13
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QS8K13
QS8K13
Pw10s,
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8K13 Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K13
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QS8K13
QS8K13
Pw10s,
R1120A
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50-12P1
Abstract: S2485
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features
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50-12P1
42T120
50-12P1
S2485
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transistor P18
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25
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40D/06
B25/50
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237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
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50-06P1
25T60
237td
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Untitled
Abstract: No abstract text available
Text: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines
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42T60
75-06P1
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synchronous motor 100-06
Abstract: No abstract text available
Text: TM ECO-PAC 2 IGBT Module PSHI 100/06* H-Bridge Configuration IC25 = 69 A VCES = 600 V VCE sat typ. = 2.3 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 K10 K13 H13 A1 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC *NTC optional
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42T60
75-06P1
synchronous motor 100-06
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ixf55n50
Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Text: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions
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125OC
100ms
ixf55n50
50N50
24 volts 100 amperes smps
9 NA STR 2005
125OC
eco-pac
PSMG50
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PSHI25
Abstract: 14T60 H13A1 514T60
Text: ECO-PACTM 2 IGBT Module PSHI 25/06* H-Bridge Configuration Short Circuit SOA Capability Square RBSOA IC25 = 24.5 A VCES = 600 V VCE sat typ. = 2.4 V F10 K10 K13 H13 A1 Preliminary Data Sheet S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC P18
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14T60
25-06P1
PSHI25
14T60
H13A1
514T60
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Untitled
Abstract: No abstract text available
Text: VKI 75-06 P1 IC25 = 69 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 X18 L9 T16 O7 S18 Pin arangement see outlines Features t IGBTs Maximum Ratings
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42T60
75-06P1
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25T60
Abstract: .25T60 RG60s
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES
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50-06P1
25T60
25T60
.25T60
RG60s
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50-12P1
Abstract: PSHI50-12 pshi50
Text: ECO-PACTM 2 PSHI 50/12* IGBT Module IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V Preliminary Data Sheet F10 K10 K13 H13 A1 S18 N9 NTC P18 PSHI 50/12* *NTC optional IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C
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42T120
50-12P1
50-12P1
PSHI50-12
pshi50
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NTC K15
Abstract: 125OC PSMG150
Text: ECO-PACTM 2 Power MOSFET in ECO-PAC 2 PSMG 150/01* Single MOSFET Die X18 I K10/11 A1 L N 8/9 Preliminary Data Sheet K13 MOSFET VDSS ID25 RDS on trr *NTC optional K15 Symbol Test Conditions V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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K10/11
125OC
NTC K15
125OC
PSMG150
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50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
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50-12P1
42T120
50-12P1
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pshi50
Abstract: PSHI50-06 NTC 33 pshi
Text: TM ECO-PAC 2 IGBT Module PSHI 50/06* H-Bridge Configuration IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V Short Circuit SOA Capability Square RBSOA F10 Preliminary Data Sheet K10 K13 H13 A1 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC PSHI 50/06*
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25T60
50-06P1
pshi50
PSHI50-06
NTC 33
pshi
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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120D/01
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A5N9
Abstract: No abstract text available
Text: ECO-PACTM 2 IGBT Module IC25 = 18 A VCES = 1200 V VCE sat typ. = 2.3 V PSII 15/12* Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 15/12* K12 IGBTs Symbol VCES VGES IC25 IC80 I CM VCEK tSC (SCSOA) Ptot Symbol *NTC optional Conditions
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Untitled
Abstract: No abstract text available
Text: TM ECO-PAC 2 IGBT Module PSII 35/06 IC25 = 31 A VCES = 600 V VCE sat typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C K12 Maximum Ratings VGES IC25 IC80 TC = 25°C
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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Untitled
Abstract: No abstract text available
Text: TM ECO-PAC 2 IGBT Module PSII 24/06* IC25 = 19 A VCES = 600 V VCE sat typ. = 1.9 V Sixpack Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 24/06* K12 IGBTs *NTC optional Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C
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G0627
Abstract: No abstract text available
Text: VMO 80-05P1 ID25 = 82 A VDSS = 500 V RDSon = 50 m Ω Power MOSFET in ECO-PAC 2 Single MOSFET Die X18 A1 I K10 LN9 *NTC optional Preliminary Data Sheet K13 K15 MOSFET Symbol Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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80-05P1
G0627
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eco-pac
Abstract: PSMG100
Text: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon PSMG 100/05* in ECO-PAC 2 Single MOSFET Die X18 A1 I K10 Preliminary Data Sheet = 82 A = 500 V Ω = 50 mΩ LN9 K13 K15 *NTC optional MOSFET Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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