K13 transistor
Abstract: NPN Transistor Pair
Text: MMDT4413 Complementary NPN/PNP Transistor SOT-363 Features Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K13 Dimensions in inches and millimeters
|
Original
|
MMDT4413
OT-363
4401-Type
4403-Type
volt-100A,
-10mA
-150mA
-500mA
-15mA
-50mA
K13 transistor
NPN Transistor Pair
|
PDF
|
50-12P1
Abstract: S2485
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features
|
Original
|
50-12P1
42T120
50-12P1
S2485
|
PDF
|
transistor P18
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25
|
Original
|
40D/06
B25/50
|
PDF
|
237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
|
Original
|
50-06P1
25T60
237td
|
PDF
|
25T60
Abstract: .25T60 RG60s
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES
|
Original
|
50-06P1
25T60
25T60
.25T60
RG60s
|
PDF
|
50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
|
Original
|
50-12P1
42T120
50-12P1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
|
Original
|
120D/01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
|
Original
|
|
PDF
|
4403
Abstract: pr 4401 J-STD-020A MMDT4413 PNP4403
Text: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMDT4413 Features • · · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching
|
Original
|
MMDT4413
4401-Type
4403-Type
OT-363
OT-363,
J-STD-020A
DS30121
4403
pr 4401
J-STD-020A
MMDT4413
PNP4403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE MODELS: MMDT4413 MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair SOT-363 A One 4401-Type NPN, One 4403-Type PNP B1 C2 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching
|
Original
|
MMDT4413
4401-Type
4403-Type
OT-363
J-STD-020C
DS30121
|
PDF
|
pr 4401
Abstract: PNP4403 4403 data sheet 4403 transistor br 4403 marking code B2 marking code C2 diode NPN SMALL SIGNAL TRANSISTOR datasheet Surface mount NPN/PNP complementary transistor J-STD-020A
Text: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package
|
Original
|
MMDT4413
4401-Type
4403-Type
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30121
pr 4401
PNP4403
4403 data sheet
4403 transistor
br 4403
marking code B2
marking code C2 diode
NPN SMALL SIGNAL TRANSISTOR datasheet
Surface mount NPN/PNP complementary transistor
J-STD-020A
|
PDF
|
K13 transistor
Abstract: No abstract text available
Text: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package
|
Original
|
MMDT4413
4401-Type
4403-Type
OT-363
OT-363,
J-STD-020A
MIL-STD-202,
DS30121
K13 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPICE MODELS: MMDT4413 MMDT4413 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair SOT-363 A One 4401-Type NPN, One 4403-Type PNP B1 C2 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching
|
Original
|
MMDT4413
4401-Type
4403-Type
OT-363
J-STD-020C
MIL-STD-202,
DS30121
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MMDT4413 COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package NPN = 4401 Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.
|
Original
|
MMDT4413
OT363
MIL-STD-202,
DS30121
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package
|
Original
|
MMDT4413
4401-Type
4403-Type
DS30121
|
PDF
|
PNP4403
Abstract: Surface mount NPN/PNP complementary transistor MMDT4413 NPN-4401
Text: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package
|
Original
|
MMDT4413
4401-Type
4403-Type
DS30121
PNP4403
Surface mount NPN/PNP complementary transistor
MMDT4413
NPN-4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction
|
Original
|
MMDT4413
4401-Type
4403-Type
DS30121
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT4413 COMPLEMENTARY NPN/PNP TRANSISTOR SOT-363 FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current ICM: 0.2/-0.2 A Operating and storage junction temperature range
|
Original
|
OT-363
MMDT4413
OT-363
-500mA
-15mA
-50mA
-20mA
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT4413 COMPLEMENTARY NPN/PNP TRANSISTOR SOT-363 FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current 0.2/-0.2 A ICM: Operating and storage junction temperature range
|
Original
|
OT-363
MMDT4413
OT-363
-500mA
-15mA
-50mA
-20mA
100MHz
|
PDF
|
E0C6001
Abstract: E0C6002 E0C6003 E0C6004 S1C60N06 60N01 capasitor 1.2 mf
Text: MF1114-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N06 Technical Manual S1C60N06 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
|
Original
|
MF1114-02
S1C60N06
S1C60N06
E0C6001
E0C6002
E0C6003
E0C6004
60N01
capasitor 1.2 mf
|
PDF
|
S1C60N14
Abstract: S1C621A0 S1C6200C Y1251
Text: MF1464-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N14 Technical Manual S1C60N14 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
|
Original
|
MF1464-02
S1C60N14
S1C60N14
E-08190
S1C621A0
S1C6200C
Y1251
|
PDF
|
S1C60N14
Abstract: S1C621A0 S1C6200C capasitor 1.2 mf 60N01 Q13MC1461 Y1251 MF1464-01
Text: MF1464-01 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N14 Technical Manual S1C60N14 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
|
Original
|
MF1464-01
S1C60N14
S1C60N14
otherwise68
E-08190
S1C621A0
S1C6200C
capasitor 1.2 mf
60N01
Q13MC1461
Y1251
MF1464-01
|
PDF
|
1FW 43 transistor
Abstract: TDA 2827 1FW ST 1FW transistor BT 742 S1C621A0 tm03 S1C60N14 1FW 53 1FW 75
Text: CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C60N14 Technical Manual S1C60N14 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
|
Original
|
S1C60N14
S1C60N14
1FW 43 transistor
TDA 2827
1FW ST
1FW transistor
BT 742
S1C621A0
tm03
1FW 53
1FW 75
|
PDF
|
