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    K2544 TRANSISTOR Search Results

    K2544 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K2544 TRANSISTOR Datasheets Context Search

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    TOSHIBA K2544

    Abstract: transistor k2544 k2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)


    Original     		PDF 2SK2544 TOSHIBA K2544 transistor k2544 k2544

    K2544

    Abstract: transistor k2544 TOSHIBA K2544 K2544 Transistor 2-10P1B 2SK2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


    Original     		PDF 2SK2544 K2544 transistor k2544 TOSHIBA K2544 K2544 Transistor 2-10P1B 2SK2544

    K2544

    Abstract: transistor k2544 K2544 Transistor TOSHIBA K2544 DR-6 2-10P1B 2SK2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) : IDSS = 100 µA (max) (VDS = 600 V)


    Original     		PDF 2SK2544 K2544 transistor k2544 K2544 Transistor TOSHIBA K2544 DR-6 2-10P1B 2SK2544

    K2544

    Abstract: transistor k2544 2SK2544 2-10P1B
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω(typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


    Original     		PDF 2SK2544 K2544 transistor k2544 2SK2544 2-10P1B

    K2544

    Abstract: transistor k2544 K2544 Transistor 2-10P1B 2SK2544
    Text: 2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2544 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current


    Original     		PDF 2SK2544 K2544 transistor k2544 K2544 Transistor 2-10P1B 2SK2544