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    K2611 TOSHIBA Search Results

    K2611 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    K2611 TOSHIBA Datasheets Context Search

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    K2611

    Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
    Text: K2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor

    toshiba transistor k2611

    Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a
    Text: K2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 toshiba transistor k2611 K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a

    k2611

    Abstract: toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65
    Text: K2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 k2611 toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba SC-65

    K2611

    Abstract: toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
    Text: K2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2611 K2611 toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611