Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K3567 TRANSISTOR Search Results

    K3567 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    K3567 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor k3567

    Abstract: k3567 k3567 voltage k3567 transistor 2SK3567
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3567 transistor k3567 k3567 k3567 voltage k3567 transistor 2SK3567 PDF

    k3567

    Abstract: transistor k3567 2sk3567 2SK3567 equivalent k3567 transistor k3567 B L k3567 voltage
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3567 k3567 transistor k3567 2sk3567 2SK3567 equivalent k3567 transistor k3567 B L k3567 voltage PDF

    transistor k3567

    Abstract: K3567 k3567 transistor k3567 voltage 2SK3567
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3567 transistor k3567 K3567 k3567 transistor k3567 voltage 2SK3567 PDF

    transistor k3567

    Abstract: k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.)


    Original     		2SK3567 transistor k3567 k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC PDF