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    K3911 TOSHIBA Search Results

    K3911 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    K3911 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3911

    Abstract: toshiba transistor k3911 2SK3911 2SK3911 equivalent K3911 TOSHIBA transistor 2SK3911 SC-65 "k3911"
    Text: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


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    PDF 2SK3911 15oducts k3911 toshiba transistor k3911 2SK3911 2SK3911 equivalent K3911 TOSHIBA transistor 2SK3911 SC-65 "k3911"

    toshiba transistor k3911

    Abstract: k3911 K3911 TOSHIBA
    Text: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


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    PDF 2SK3911 toshiba transistor k3911 k3911 K3911 TOSHIBA

    toshiba transistor k3911

    Abstract: K3911 TOSHIBA k3911 "k3911" 2SK3911 transistor 2SK3911 25VDD
    Text: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original
    PDF 2SK3911 toshiba transistor k3911 K3911 TOSHIBA k3911 "k3911" 2SK3911 transistor 2SK3911 25VDD

    transistor 2SK3911

    Abstract: No abstract text available
    Text: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original
    PDF 2SK3911 transistor 2SK3911

    toshiba transistor k3911

    Abstract: K3911 TOSHIBA transistor 2SK3911 K3911 transistor K3911 2SK3911 SC-65 "k3911"
    Text: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original
    PDF 2SK3911 toshiba transistor k3911 K3911 TOSHIBA transistor 2SK3911 K3911 transistor K3911 2SK3911 SC-65 "k3911"

    k3911

    Abstract: toshiba transistor k3911 2SK3911 equivalent 2SK3911 transistor 2SK3911 K3911 TOSHIBA SC-65 transistor K3911 "k3911"
    Text: K3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type MACHII π-MOSVI 2SK3911 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original
    PDF 2SK3911 k3911 toshiba transistor k3911 2SK3911 equivalent 2SK3911 transistor 2SK3911 K3911 TOSHIBA SC-65 transistor K3911 "k3911"

    K3911

    Abstract: 2SK3911 "k3911" K3911 TOSHIBA SC-65 MJ1000
    Text: 2SK3911 シリコンNチャネルMOS形 MACHⅡ π−MOSⅥ 東芝電界効果トランジスタ 2SK3911 ○ スイッチングレギュレータ用 単位: mm • ゲート入力電荷量が小さい。 : Qg = 60 nC (標準) • オン抵抗が低い。


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    PDF 2SK3911 SC-65 2-16C1B 20070701-JA K3911 2SK3911 "k3911" K3911 TOSHIBA SC-65 MJ1000

    K3911

    Abstract: "k3911" 2SK3911 K3911 TOSHIBA 2SK3911 equivalent SC-65
    Text: 2SK3911 シリコンNチャネルMOS形 MACHⅡ π−MOSⅥ 東芝電界効果トランジスタ 2SK3911 ○ スイッチングレギュレータ用 単位: mm • ゲート入力電荷量が小さい。 : Qg = 60 nC (標準) • オン抵抗が低い。


    Original
    PDF 2SK3911 SC-65 2-16C1Bh-c) K3911 "k3911" 2SK3911 K3911 TOSHIBA 2SK3911 equivalent SC-65