Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K4F640812E Search Results

    K4F640812E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F640812E Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF
    K4F640812E Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Original PDF
    K4F640812E-JC/L Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF
    K4F640812E-JI/P Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF
    K4F640812E-TC/L Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF
    K4F640812E-TI/P Samsung Electronics DRAM Module, 8Mx8 Bit CMOS Dynamic RAM With Fast Page Mode Original PDF

    K4F640812E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4F640812E

    Abstract: K4F660812E
    Text: K4F660812E,K4F640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) ar e


    Original     		K4F660812E K4F640812E 400mil K4F640812E PDF

    K4F640812E

    Abstract: K4F660812E
    Text: Industrial Temperature K4F660812E,K4F640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) ar e


    Original     		K4F660812E K4F640812E 400mil K4F640812E PDF