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    K4S64163 Price and Stock

    Samsung Semiconductor K4S641632H-UC60

    SDRAM - 64MBit (4M x 16) - 3.3V - 54-Pin TSOP-II - Tape&Reel
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    Onlinecomponents.com K4S641632H-UC60 5,487
    • 1 $17.59
    • 10 $17.59
    • 100 $4.28
    • 1000 $3.74
    • 10000 $3.74
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    Samsung Semiconductor K4S641632F-TL1L

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    Bristol Electronics K4S641632F-TL1L 3,500
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    Samsung Semiconductor K4S641632H-TC75

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    Bristol Electronics K4S641632H-TC75 294
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    Samsung Semiconductor K4S641632F-TC70

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    Bristol Electronics K4S641632F-TC70 268
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    K4S641632F-TC70 10
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    Samsung Semiconductor K4S641632E-TC75

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    Bristol Electronics K4S641632E-TC75 237 1
    • 1 $12
    • 10 $9
    • 100 $7.2
    • 1000 $6.9
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    Quest Components K4S641632E-TC75 189
    • 1 $16
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    • 100 $10
    • 1000 $9.6
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    K4S641632E-TC75 4
    • 1 $10.2
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    Find more K4S64163 price and stock on Findchips.com

    K4S64163 Datasheets (140)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S641632 Samsung Electronics IC,SDRAM,4X1MX16,CMOS,TSOP,54PIN,PLASTIC Scan PDF
    K4S641632C Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Original PDF
    K4S641632C-TC1H Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TC1L Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TC60 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Original PDF
    K4S641632C-TC70 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Original PDF
    K4S641632C-TC75 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 133MHz Original PDF
    K4S641632C-TC80 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Original PDF
    K4S641632C-TC/L10 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L1H Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L1L Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L60 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L70 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L75 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TC/L80 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S641632C-TL10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Original PDF
    K4S641632C-TL1H Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TL1L Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    K4S641632C-TL60 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Original PDF
    ...

    K4S64163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641633F

    Abstract: No abstract text available
    Text: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S641633F-R 4Mx16 54CSP 16Bit K4S641633F

    K4S64163LF

    Abstract: No abstract text available
    Text: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF

    K4S641633H-R

    Abstract: No abstract text available
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54FBGA K4S641633H-R

    BFR15

    Abstract: No abstract text available
    Text: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF BFR15

    Untitled

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S64163LF-RG/S 4Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S64163LF-RG/S CMOS SDRAM Revision History Revision 0.0 (May. 2001, Target) • First generation of 64Mb Mobile SDRAM 54CSP having TSCR option (VDD 2.5V, VDDQ 1.8V).


    Original     		PDF K4S64163LF-RG/S 4Mx16 54CSP 54CSP

    64Mb samsung SDRAM

    Abstract: No abstract text available
    Text: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RF(R) CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RF(R) CMOS SDRAM Revision History


    Original     		PDF K4S64163LF-RF 4Mx16 54CSP 64Mb samsung SDRAM

    Untitled

    Abstract: No abstract text available
    Text: K4S641632E-TI P CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Jan. 2001 K4S641632E-TI(P) CMOS SDRAM Revision History


    Original     		PDF K4S641632E-TI 64Mbit 16Bit

    RG290

    Abstract: No abstract text available
    Text: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RG(S) CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR, -25°C ~ 85°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RG(S) CMOS SDRAM Revision 0.0 (May. 2001, Target)


    Original     		PDF K4S64163LF-RG 4Mx16 54CSP RG290

    Untitled

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S64163LF-GL/N/P 4Mx16 SDRAM 52CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.1 April 2002 Rev. 1.1 April 2002 K4S64163LF-GL/N/P CMOS SDRAM Revision History Revision 0.0 (October 10. 2001, Preliminary) • First generation of 64Mb SDRAM 52CSP. (V DD 2.5V, VDDQ 1.8V & 2.5V).


    Original     		PDF K4S64163LF-GL/N/P 4Mx16 52CSP 52CSP. 95xVDDQ -75/-1L 16Bit

    K4S641632N

    Abstract: k4s641632n-li K4S641632
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP K4S641632N k4s641632n-li K4S641632

    k4s641632n

    Abstract: K4S641632N-LC K4S640832N
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Pb-Free and Halogen Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n K4S641632N-LC K4S640832N

    k4s641632n

    Abstract: k4s641632n-li tcl 14175
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP k4s641632n k4s641632n-li tcl 14175

    K4S641633D-GN

    Abstract: No abstract text available
    Text: K4S641633D-GN96 CMOS SDRAM 4Mx16 SDRAM D-die, 3.0V, CSP Rev. 0.1 October, 2000 Rev. 0.1 Oct. 2000 K4S641633D-GN96 CMOS SDRAM Revision History Revision 0.0 September, 2000 - First published. Revision 0.1 (October, 2000) - Changed AC/DC test output load condition from 50pF to 30pF


    Original     		PDF K4S641633D-GN96 4Mx16 16Bit K4S641633D A10/AP K4S641633D-GN

    K4S641633D-G

    Abstract: K4S641633D
    Text: K4S641633D-G CMOS SDRAM 4Mx16 SDRAM D-die, 3.0V, CSP Revision 0.1 December 2000 Rev. 0.1 Dec. 2000 K4S641633D-G CMOS SDRAM Revision History Version 0.0 October. 2000. Preliminary First generation based on 64Mb D-die. Version 0.1(Dec. 29. 2000) • Final Specification of 64Mb D-die


    Original     		PDF K4S641633D-G 4Mx16 16Bit K4S641633D K4S641633D-G

    K4S641632F-TC75

    Abstract: K4S641632F
    Text: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S641632F CMOS SDRAM Revision History Revision 0.0 June, 2001


    Original     		PDF K4S641632F 64Mbit 16Bit 100MHz A10/AP K4S641632F-TC75 K4S641632F

    K4S641633F

    Abstract: No abstract text available
    Text: K4S641633F-G A L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-G(A)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 52CSP FEATURES GENERAL DESCRIPTION • 3.0V power supply.


    Original     		PDF K4S641633F-G 4Mx16 52CSP 16Bit K4S641633F

    K4S64163LH

    Abstract: No abstract text available
    Text: K4S64163LH - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S64163LH 16Bit 54FBGA

    K4S64163LF

    Abstract: No abstract text available
    Text: K4S64163LF-G A F/R CMOS SDRAM 4Mx16 Mobile SDRAM 52CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-G(A)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 52CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-G 4Mx16 52CSP 16Bit K4S64163LF

    K4S641632K

    Abstract: K4S640832K K4S641632
    Text: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4S640832K K4S641632K A10/AP K4S641632K K4S640832K K4S641632

    tcl 14175

    Abstract: K4S641632N
    Text: K4S641632N Industrial Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S641632N A10/AP tcl 14175 K4S641632N

    Untitled

    Abstract: No abstract text available
    Text: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May. 2000 K4S641632D CMOS SDRAM Revision History Revision 0.1 May 2000


    Original     		PDF K4S641632D 64Mbit 16Bit K4S280432C-TC75/TL75 A10/AP

    Untitled

    Abstract: No abstract text available
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54CSP

    Untitled

    Abstract: No abstract text available
    Text: V DD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GL N CMOS SDRAM 4Mx16 SDRAM 52CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-GL(N) CMOS SDRAM Revision History Revision 0.0 (October 10. 2001, Preliminary) • First generation of 64Mb SDRAM 52CSP. (V DD 2.5V, V DDQ 1.8V & 2.5V).


    Original     		PDF K4S64163LF-GL 4Mx16 52CSP 52CSP. 95xVDDQ -75/-1L 16Bit

    k4s641632n

    Abstract: No abstract text available
    Text: K4S640832N K4S641632N Synchronous DRAM 64Mb N-die SDRAM Specification 54 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4S640832N K4S641632N A10/AP k4s641632n