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    ARCOTEK K6T4008C1C-GL55T

    SRAM ASYNC SLOW 4M 512Kx8 5V 32-
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    ARCOTEK K6T4008C1C-GL55T00

    SRAM ASYNC SLOW 4MB 512Kx8 5V 32
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    Samsung Semiconductor K6T4008V1B-VB70000

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    Bristol Electronics K6T4008V1B-VB70000 3,129
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    Quest Components K6T4008V1B-VB70000 2,503
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    Samsung Semiconductor K6T4008U1C-YF10

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    Bristol Electronics K6T4008U1C-YF10 697
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    Samsung Semiconductor K6T4008V1C-MF70T00

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    Bristol Electronics K6T4008V1C-MF70T00 613
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    K6T40 Datasheets (174)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6T4008C Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-B Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DL55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-F Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B Family Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GF55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GF70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GL55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GP55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GP70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    ...

    K6T40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6T4008V1B-VF70

    Abstract: Improved MF10 32-TSOP2-R
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original
    K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B KM68V4000B K6T4008V1B KM68U4000B K6T4008U1B K6T4008V1B-VF70 Improved MF10 32-TSOP2-R PDF

    K6T4016C3B-TB70

    Abstract: K6T4016C3B-B
    Text: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996


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    K6T4016C3B 256Kx16 15/75mA 130mA 100pF K6T4016C3B-TB70 K6T4016C3B-B PDF

    k6t4016c3c-tf70

    Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
    Text: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    K6T4016C3C 256Kx16 k6t4016c3c-tf70 K6T4016C3C-TB70 K6T4016C3C-TB55 April 1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: K6T4016U6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction July 4, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.


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    K6T4016U6C 256Kx16 25/Typ. 45/Typ. 68/Typ. PDF

    Untitled

    Abstract: No abstract text available
    Text: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change: A to B September 19, 1996 Preliminary


    Original
    K6T4016V3B, K6T4016U3B 256Kx16 10/45mA KM616V4000BI, KM616U4000B KM616U4000BI PDF

    K6T4008V1C-VF70

    Abstract: K6T4008U1C K6T4008V1C K6T4008V1C-B KM68U4000C
    Text: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns 70/85/100ns


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    K6T4008V1C, K6T4008U1C 512Kx8 KM68U4000C 85/100ns 70/85/100ns 32-TSOP1-0820 32-TSOP1-0813 K6T4008V1C-VF70 K6T4008V1C K6T4008V1C-B KM68U4000C PDF

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


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    K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-GL70 K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55 PDF

    K6T4016C3B-B

    Abstract: K6T4016C3B K6T4016C3B-F
    Text: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996


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    K6T4016C3B 256Kx16 15/75mA 130mA 100pF K6T4016C3B-B K6T4016C3B-F PDF

    k6t4016c3c-tf70

    Abstract: K6T4016C3C K6T4016C3C-RB55 K6T4016C3C-TB70 K6T4016C3CTB7 K6T4016C3CF K6T4016C3C-TF55
    Text: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    K6T4016C3C 256Kx16 k6t4016c3c-tf70 K6T4016C3C-RB55 K6T4016C3C-TB70 K6T4016C3CTB7 K6T4016C3CF K6T4016C3C-TF55 PDF

    K6T4008U2C-ZF70

    Abstract: K6T4008U2C K6T4008U2C-F K6T4008U2C-ZF10 K6T4008U2C-ZF85 K6T4008V2C
    Text: K6T4008V2C, K6T4008U2C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft December 3, 1998 Preliminary 1.0 Finalize April 28, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.


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    K6T4008V2C, K6T4008U2C 512Kx8 25/Typ. 45/Typ. 68/Typ. K6T4008U2C-ZF70 K6T4008U2C-F K6T4008U2C-ZF10 K6T4008U2C-ZF85 K6T4008V2C PDF

    K6T4016V3C-TF70

    Abstract: No abstract text available
    Text: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns


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    K6T4016V3C, K6T4016U3C 256Kx16 70/85ns 70/85/100ns 85/100ns K6T4016V3C-TB55 K6T4016V3C-TF70 PDF

    K6T4008C1C Family

    Abstract: K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C Family K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM PDF

    ZF12

    Abstract: No abstract text available
    Text: K6T4016S6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.01 1.0 History Draft Date Remark Initial draft Errata correction June 26, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.


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    K6T4016S6C 256Kx16 25/Typ. 45/Typ. 68/Typ. ZF12 PDF

    K6T4008U2C-ZF10

    Abstract: No abstract text available
    Text: K6T4008V2C, K6T4008U2C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft December 3, 1998 Preliminary 1.0 Finalize April 28, 1999 Final Revise - Improved VOH output high voltage from 2.2V to 2.4V.


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    K6T4008V2C, K6T4008U2C 512Kx8 25/Typ. 45/Typ. 68/Typ. K6T4008U2C-ZF10 PDF

    Untitled

    Abstract: No abstract text available
    Text: K6T4016V4C, K6T4016U4C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Initial draft - UB/LB power control Errata correction July 4, 1998 Preliminary 0.1 Revise - Add 3,3V product: K6T4016V4C


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    K6T4016V4C, K6T4016U4C 256Kx16 K6T4016V4C 25/Typ. 45/Typ. 68/Typ. PDF

    K6T4016U3C

    Abstract: K6T4016U3C-B K6T4016U3C-F K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB70
    Text: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revised - Speed bin change Commercial : 70/85ns 70/85/100ns


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    K6T4016V3C, K6T4016U3C 256Kx16 70/85ns 70/85/100ns 85/100ns K6T4016U3C-B K6T4016U3C-F K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB70 PDF

    K6T4016V3C

    Abstract: K6T4016V3C-TF70 K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB70
    Text: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revised - Speed bin change Commercial : 70/85ns 70/85/100ns


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    K6T4016V3C, K6T4016U3C 256Kx16 70/85ns 70/85/100ns 85/100ns K6T4016V3C K6T4016V3C-TF70 K6T4016U3C-B K6T4016U3C-F K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB70 PDF

    VF10

    Abstract: K6T4008V1B
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


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    K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B VF10 K6T4008V1B PDF

    K6T4016U6C-ZF70

    Abstract: K6T4016U6C K6T4016U6C-F K6T4016U6
    Text: K6T4016U6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction July 4, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.


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    K6T4016U6C 256Kx16 25/Typ. 45/Typ. 68/Typ. K6T4016U6C-ZF70 K6T4016U6C-F K6T4016U6 PDF

    K6T4016V4C-ZF10

    Abstract: K6T4016U4C K6T4016U4C-F K6T4016V4C
    Text: K6T4016V4C, K6T4016U4C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Initial draft - UB/LB power control Errata correction July 4, 1998 Preliminary 0.1 Revise - Add 3,3V product : K6T4016V4C


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    K6T4016V4C, K6T4016U4C 256Kx16 K6T4016V4C 25/Typ. 45/Typ. 68/Typ. K6T4016V4C-ZF10 K6T4016U4C-F K6T4016V4C PDF

    Untitled

    Abstract: No abstract text available
    Text: K6T4016S3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction June 16, 1998 August 10, 1998 Preliminary Finalize April 30, 1999


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    K6T4016S3C 256Kx16 PDF

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original
    K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-DL70 K6T4008C1B-GL55 PDF

    K6T4016U3C

    Abstract: K6T4016U3C-B K6T4016U3C-F K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB55
    Text: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revise - Speed bin change Commercial: 70/85ns 70/85/100ns


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    K6T4016V3C, K6T4016U3C 256Kx16 70/85ns 70/85/100ns 85/100ns K6T4016V3C-TB55 K6T4016U3C-B K6T4016U3C-F K6T4016V3C K6T4016V3C-B K6T4016V3C-F PDF

    K6T4008V1C-GB70

    Abstract: K6T4008V1C-VF70 mf10
    Text: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C: 85/100ns 70/85/100ns


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    K6T4008V1C, K6T4008U1C 512Kx8 KM68U4000C: 85/100ns 70/85/100ns 32-TSOP1-0820 32-TSOP1-0813 32-TSOP1-0820 K6T4008V1C-GB70 K6T4008V1C-VF70 mf10 PDF