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    K6T4008C1 Price and Stock

    ARCOTEK K6T4008C1C-GL55T

    SRAM ASYNC SLOW 4M 512Kx8 5V 32-
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    DigiKey K6T4008C1C-GL55T Reel 1,000
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    • 1000 $4.2
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    ARCOTEK K6T4008C1C-GL55T00

    SRAM ASYNC SLOW 4MB 512Kx8 5V 32
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    DigiKey K6T4008C1C-GL55T00 Reel 100
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    • 100 $4.5
    • 1000 $4.2
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    Samsung Semiconductor K6T4008C1C-GL55T00

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    Bristol Electronics K6T4008C1C-GL55T00 500
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    Quest Components K6T4008C1C-GL55T00 400
    • 1 $9.6
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    • 100 $9.6
    • 1000 $4.8
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    Samsung Semiconductor K6T4008C1B-VB70

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    Bristol Electronics K6T4008C1B-VB70 53
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    Quest Components K6T4008C1B-VB70 84
    • 1 $17.8369
    • 10 $17.8369
    • 100 $13.8731
    • 1000 $13.8731
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    K6T4008C1B-VB70 60
    • 1 $15.855
    • 10 $15.855
    • 100 $9.513
    • 1000 $9.513
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    Samsung Semiconductor K6T4008C1B-DL70

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    Bristol Electronics K6T4008C1B-DL70 34
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    K6T4008C1 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6T4008C1B Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-B Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DL55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-DL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-F Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B Family Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GF55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GF70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GL55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GL70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GP55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-GP70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-L Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MB55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MB70 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF
    K6T4008C1B-MF55 Samsung Electronics 512K x 8 bit Low Power CMOS Static RAM Original PDF

    K6T4008C1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-GL70 K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55

    K6T4008C1C Family

    Abstract: K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C Family K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM

    K6T4008C1C-DB55

    Abstract: K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55
    Text: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6T4008C1C 512Kx8 512Kx8 047MAX K6T4008C1C-DB55 K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55

    K6T4008C1B-DB70

    Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
    Text: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA


    Original     		PDF K6T4008C1B 512Kx8 15/35mA 10/45mA 100pF 70/100ns 55/70ns 047MAX K6T4008C1B-DB70 K6T4008C1B-DL70 K6T4008C1B-GL55

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    CYPRESS SAMSUNG CROSS REFERENCE

    Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
    Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V


    Original     		PDF K6Y0808C1D BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62UV2000-15 BS62LV2000-10 BS62LV2000-70 BS62XV256-25 32Kx8 CYPRESS SAMSUNG CROSS REFERENCE TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70