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    KA BAND DIODE DETECTOR WAVEGUIDE Search Results

    KA BAND DIODE DETECTOR WAVEGUIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    KA BAND DIODE DETECTOR WAVEGUIDE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CME7660-203

    Abstract: metal detector service manual CDP7624-207
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction


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    PDF J-STD-020) 200847D CME7660-203 metal detector service manual CDP7624-207

    bare die schottky diode

    Abstract: CDB7619-000
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction


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    PDF J-STD-020) 200847E bare die schottky diode CDB7619-000

    CME7660-000

    Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction


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    PDF J-STD-020) 200847C CME7660-000 CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000

    DDB2265-230

    Abstract: DDB2265-250 DDB2503-220 DDB2503-230 DDB2503-250 DDB2504-220 DDB2504-230 DDB2504-250 pin diode model spice x band diode detector waveguide
    Text: data sheet Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Applications l D  etectors Features l l l l l B  oth P-type and N-type low barrier silicon available L ow 1/f noise B  onded junctions for reliability P lanar passivated beam-lead and chip construction


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    cdb7619

    Abstract: No abstract text available
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction


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    PDF J-STD-020) SQ04-0073. 200847F cdb7619

    diode RL 207

    Abstract: gold metal detectors gold detector circuit free x band diode detector waveguide CDB7620-207 ka-band mixer DDB2503-250 DDB2504-000 DDB2504-230 DDB2265-000
    Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications x Detectors Features x Available in both P-type and N-type low barrier silicon x Low 1/f noise x Bonded junctions for reliability x Planar passivated beam-lead and chip construction


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    PDF J-STD-020) 200847B diode RL 207 gold metal detectors gold detector circuit free x band diode detector waveguide CDB7620-207 ka-band mixer DDB2503-250 DDB2504-000 DDB2504-230 DDB2265-000

    MO9072

    Abstract: No abstract text available
    Text: GUNN TRANSCEIVERS Voltage Controlled TM MO87127 MO9140 Features ● Electronic Frequency Control ● High Doppler Sensitivity Levels ● Low AM and FM Noise Levels ● Direction-of-Motion Sensing ● Compact Size ● Pulsed Transceivers Available Applications


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    PDF MO87127 MO9140 MO9071, MO9072 MO9410-1, UG599/U WR-28 MO9072

    sky77528

    Abstract: sky77534 SKY77526 SKY77705 SKY77548 SKY77542 SKY65404-21 SKY77544 SKY77701 AX508
    Text: Product Selection Guide Fall 2010 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,


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    PDF BRO254-10A sky77528 sky77534 SKY77526 SKY77705 SKY77548 SKY77542 SKY65404-21 SKY77544 SKY77701 AX508

    APC-7 Calibration Kit

    Abstract: BENDIX TEE CONNECTORS
    Text: Agilent’s test accessories eliminate the weak links in your measurement system. • Guarantee accurate and repeatable results • Reduce cost of test Online Resources • Locate product and support information with simple navigation to technical overviews, manuals, news releases, education


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    PDF 5990-8661EN APC-7 Calibration Kit BENDIX TEE CONNECTORS

    AML3501

    Abstract: k and ka band radar detector AMP-90 AMP3001 ADN16 KA band diode detector waveguide ADN3002 AMH3001
    Text: 0258354 ADVANCED SEMICONDUCTOR 92D 0 0 1 0 6 D 7• '-¿ ? 7 -ö 7 ]>E|0ESa3SM OOOOlOt, 7 | SCHOTTKY BARRIER MIXER AND DETECTOR DIODES ASI’s Schottky Barrier Mixer and Detector Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to


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    LN358

    Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
    Text: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    5503 dm

    Abstract: DMF6130B DMF-6130B dm 465 k and ka band radar detector P041 005801 DMC550 p029 DMF6130BM
    Text: 0585443 ALPHA I , I . 03 - j T | DSSS4 43 □□OD3bc5 2 WT-> • | 3 -r T * -J ~ / ~ O / Silicon Bonded and Pressure Contact - Schottky Barrier Mixer Diodes ALPHA INI/ SEMICONDUCTOR Features • Bonded Junctions for Reliability • Low 1/f N o ise • Low Turn O n for Starved L.O. Applications


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    PDF B4009 F6724 F5078Y 105-JAN P-017 P-075 5503 dm DMF6130B DMF-6130B dm 465 k and ka band radar detector P041 005801 DMC550 p029 DMF6130BM

    1N1611AR

    Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
    Text: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed


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    Untitled

    Abstract: No abstract text available
    Text: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications


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    PDF 0S65H43 P-041 P-076

    radar detector 10.5 ghz local oscillator

    Abstract: Silicon Point Contact Mixer Diodes dmc5910
    Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de­


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    PDF 40GHz MF5078-024 DMF5078-025 DMF4039-024 DMF4039-025 DMF5078-018 DMF5078-019 DMF4039-018 DMF4039-019 DMF5078-012 radar detector 10.5 ghz local oscillator Silicon Point Contact Mixer Diodes dmc5910

    Silicon Point Contact Mixer Diodes

    Abstract: ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode
    Text: ALPHA IN»/ SEMICONDUCTOR 4ÛE D • 05Û54M3 D0011S0 ÔTÏ ■ ALP Silicon Schottky Barrier Detector Diodes To-jol Features Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky


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    PDF D0011S0 Silicon Point Contact Mixer Diodes ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode

    radar detector 10.5 ghz local oscillator

    Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
    Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications


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    PDF 40GHz in018 DMF4039-019 DMF5078-012 DMF5078-013 DMF4039-012 DMF4039-013 DMF5078-006 DMF5078-007 DMF4039-006 radar detector 10.5 ghz local oscillator DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes

    a5090d

    Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
    Text: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    diode s443

    Abstract: DMK-6606 CMK-7704A S443
    Text: ~D3 DE I 0505443 DGGD347 3 | ~ 03E 0 0 3 4 7 D 'T~ Ò 'J - O 1 ALPHA IN»/ SE MIC ONDU CT OR 0 5 8 5 4 4 3 A L P H A IN D / S E M I C O N D U C T O R GaAs Schottky Barrier Mixer Diodes Features Û If • Low Noise Figure • Excellent Cutoff • Ideal for Image Enhancement Mixers


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    PDF DGGD347 DMK6583 DMK3308 diode s443 DMK-6606 CMK-7704A S443

    1N358R

    Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
    Text: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .


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    PDF 1N358 1N1611 1N83X, DDA4072, DDA6797 1N358R 1N830A 1N1611AR 1N3582 dda5093 P-009 1N830 Silicon Point Contact Diode

    Silicon Point Contact Mixer Diodes

    Abstract: No abstract text available
    Text: GaAs Schottky Barrier Mixer Diodes Features • Low Noise Figure Excellent Cutoff Ideal for Image Enhancement Mixers Passivated Planar Construction for Reliability |U L Description Alpha’s series of gallium arsenide Schottky barrier di­ odes are available in beam-lead, chip and packaged


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    PDF DMK6571-000 DMK3318-000 DMK6583-000 DMK3379-000 DMK3167-000 DMK3353-000 DMK3354-000 DMK3386-000 DMK4712-000 DMK3308-000 Silicon Point Contact Mixer Diodes

    378016

    Abstract: Ka Band Mixer dmk6600 "frequency mixer" ku DMK6583 Silicon Point Contact Mixer Diodes DMK2784-000
    Text: ALPHA IN»/ SEMICONDUCTOR 4ÔE D • Features ■ ■ ■ ■ GaAs Schottky Barrier Mixer Diodes 0SÔ5443 0001101 ITT ■ ALP -•» : -T '07"0“7 _ j 4 Low Noise Figure Excellent Cutoff Ideal for Image Enhancement Mixers Passivated Planar Construction for Reliability


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    PDF DMK6571-000 DMK3318-000 DMK6583-000 DMK3379-000 DMK3167-000 DMK3353-000 DMK3354-000 DMK3386-000 DMK4712-000 DMK3308-000 378016 Ka Band Mixer dmk6600 "frequency mixer" ku DMK6583 Silicon Point Contact Mixer Diodes DMK2784-000

    y-349 diode

    Abstract: dmf6106 radar detector 10.5 ghz local oscillator DMF-6106 MF68 Alpha Industries Detector Diodes DIODE 349
    Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ED A lpha DMB, DMC, DMF Series Features • Bonded Junctions for Reliability ■ Low 1/f Noise ■ Low Turn On for Starved L.O. Applications ■ Planar Passivated Dice for Reliability ■ Uniform Characteristics


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    m1305 transistor

    Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
    Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082


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    PDF NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM353 NJM1458 NJM2041 m1305 transistor w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw