VDA1002B
Abstract: Receiver Protectors tr limiter ka band Limiter band Limiter ka band TR Limiter Limiter WR28 WR-28
Text: Receiver Protectors VDA1002B Ka-Band TR Limiter Description: Ka-Band TR Limiter. Features: • · · · · · · · · · · · Frequency: 34.55 to 35.25 GHz Power: 10 kW peak Pulsewidth: 0.16 mSec max Duty Cycle: .002 max Insertion Loss: 1.6 dB max VSWR: 1.4:1 max
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VDA1002B
Receiver Protectors
tr limiter
ka band Limiter
band Limiter
ka band TR Limiter
Limiter
WR28
WR-28
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WR284* ISOLATOR
Abstract: MS3116E-10-6S WR340 flange dimensions
Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS
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2002/96/EC
2002/96/EC
C-39B
WR284* ISOLATOR
MS3116E-10-6S
WR340 flange dimensions
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Untitled
Abstract: No abstract text available
Text: TGL2203 Ka-Band 1 W VPIN Limiter Applications • Receive Chain Protection Commercial and Military Radar Product Features Functional Block Diagram Frequency Range: 30 - 38 GHz Insertion Loss: < 1 dB Peak Power Handling: 1 W
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TGL2203
TGL2203
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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Mobile applications
Abstract: epcos D5011 b3202 y2 d2024 a013 SMD b84132 rm8 epcos transformer EPCOS 230 00 O D1043
Text: Application Guide 2008 Information & Communications Electronic Components for Mobile Applications www.epcos.com Welcome to the World of Electronic Components and Modules EPCOS is a leading manufacturer of electronic components, modules and systems. Our broad portfolio includes capacitors, inductors and ferrites, EMC filters, sensors
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SEMP 690
Abstract: No abstract text available
Text: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5
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SPG-14
SEMP 690
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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A80-A350XSMD
Abstract: MODEM SHDSL epcos ferrite
Text: Ferrites and Accessories for xDSL Applications Product Profile 2002 http://www.epcos.com Contents Introduction 3 Optimized ferrite cores for xDSL applications 4 Clearance and creepage distances 7 Dimensions: cores and coil formers 8 Technical data and ordering codes
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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DMJ3086
Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Text: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages
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DMV3946-000
DMB4500-000
DMB4501-000
DMB6780-000
DMB3000-000
DMB6782-000
DMB3001-000
DMB6781-000
DMB3003-000
DMB3004-000
DMJ3086
DMJ4317
DME4750-000
DMF3068-000
mip 290
dmf5818
DMF6554-000
DME3040-000
DMJ3181-000
DMF3291-000
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DMJ4747
Abstract: DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes Features • ■ ' ±A Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically Sealed Packages v v * uX ■ > * ' I < ^ p»iL VHM Description RF parameters, capacitance and breakdown voltage
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DMJ4747
DMJ4708
DMJ3102-000
DMF-5845
DMJ3086
DMF6554-000
DMF2190-000
DMJ4317-000
dme3013-000
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DME3256-000
Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DME3256-000
DMF6554-000
DMJ3102-000
132-042
DMJ4317-000
DMJ3086-000
DMJ3086
DME3014-000
silicon di for microwave diode mixer
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AML3501
Abstract: k and ka band radar detector AMP-90 AMP3001 ADN16 KA band diode detector waveguide ADN3002 AMH3001
Text: 0258354 ADVANCED SEMICONDUCTOR 92D 0 0 1 0 6 D 7• '-¿ ? 7 -ö 7 ]>E|0ESa3SM OOOOlOt, 7 | SCHOTTKY BARRIER MIXER AND DETECTOR DIODES ASI’s Schottky Barrier Mixer and Detector Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to
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radar detector 10.5 ghz local oscillator
Abstract: Silicon Point Contact Mixer Diodes dmc5910
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de
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40GHz
MF5078-024
DMF5078-025
DMF4039-024
DMF4039-025
DMF5078-018
DMF5078-019
DMF4039-018
DMF4039-019
DMF5078-012
radar detector 10.5 ghz local oscillator
Silicon Point Contact Mixer Diodes
dmc5910
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radar detector 10.5 ghz local oscillator
Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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40GHz
in018
DMF4039-019
DMF5078-012
DMF5078-013
DMF4039-012
DMF4039-013
DMF5078-006
DMF5078-007
DMF4039-006
radar detector 10.5 ghz local oscillator
DMC5501
DMF-6106
DMF4039
dmf6106
005801
DMF6130-013
Silicon Point Contact Mixer Diodes
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Untitled
Abstract: No abstract text available
Text: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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0S65H43
P-041
P-076
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DMG-6414A
Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
Text: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On
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1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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Silicon Point Contact Mixer Diodes
Abstract: ka-band mixer Silicon Detector Diodes Silicon Point Contact Diode
Text: ALPHA IN»/ SEMICONDUCTOR 4ÛE D • 05Û54M3 D0011S0 ÔTÏ ■ ALP Silicon Schottky Barrier Detector Diodes To-jol Features Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky
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D0011S0
Silicon Point Contact Mixer Diodes
ka-band mixer
Silicon Detector Diodes
Silicon Point Contact Diode
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pulse metal detector
Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
Text: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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DDB-4503
Abstract: KA band detector
Text: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction
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T-07-0
05A5443
0D0D373
0a37L,
DDB-4503
KA band detector
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CDB-7606
Abstract: CDB7606-000
Text: Silicon Schottky Barrier Detector Diodes S3 A lp h a CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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DDB3268-000
Abstract: DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000
Text: Silicon Schottky Barrier Detector Diodes ESAlpha CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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B24-4579
DDB3268-000
DDB5098-000
DDB4517-006
kaba
DDL6672
CDB7619-000
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