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    BUK444

    Abstract: BUK444-500A BUK444-500B
    Text: N AMER P H I L I P S / D I S C R E T E asE kb53T3 1 GDSG37G 1 j> BUK444-500A BUK444-500B PowerMOS transistor T - 3 7 - 0 9 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF kb53T3i Goaa37a BUK444-500A BUK444-500B BUK444 -500A -500B

    ferroxcube 4322 020 97171

    Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
    Text: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion


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    PDF BLF175 OT123 bb53131 BLF175 MCA25S ferroxcube 4322 020 97171 philips ferroxcube 4c6 D1 Marking SOT123 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322