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    KC 2026 Search Results

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    HAF2026RJ-EL-E Renesas Electronics Corporation Silicon N Channel Power MOS FET Power Switching, SOP, /Embossed Tape Visit Renesas Electronics Corporation
    ISL12026AIBZ-T Renesas Electronics Corporation Real Time Clock/Calendar with I2C Bus™ and EEPROM Visit Renesas Electronics Corporation
    ISL72026SEHVF Renesas Electronics Corporation 3.3V Radiation Tolerant CAN Transceiver with Listen Mode and Loopback Visit Renesas Electronics Corporation
    ISL12026AIBZ Renesas Electronics Corporation Real Time Clock/Calendar with I2C Bus™ and EEPROM Visit Renesas Electronics Corporation
    HAF2026RJ Renesas Electronics Corporation Silicon N Channel Power MOS FET Power Switching, SOP, /Embossed Tape Visit Renesas Electronics Corporation
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    KC 2026 Price and Stock

    3M Interconnect CHG-2026-J01010-KCP

    Headers & Wire Housings 26P PLRZD IDC SOCKET
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    TT Electronics plc PCF0402-02-62KCT1

    Thin Film Resistors - SMD
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    TT Electronics plc PCF0402-02-68KCT1

    Thin Film Resistors - SMD
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    3M Interconnect CHG-2026-001010-KCP

    Headers & Wire Housings 26P DR SOCKET
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    KC 2026 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    930 dtl

    Abstract: la 4508 ic schematic diagram sn524a eel 19 2005 transformer sn15846n J 5027-R sn15846 CREATIVE 5507 transistor kc 2026 Jacinto
    Text: Notes on This Fi rst Edition This first edition of TI's Integrated Circuits catalog contains currently published data sheets covering SOLID CIRCUIT semiconductor networks. As new data sheets are published, they will be distributed for insertion in the appropriate sections of this basic Tightleaf®


    Original     		PDF

    kc 2026

    Abstract: PJSRV05W-4LC marking KC
    Text: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.


    Original     		PDF PJSRV05W-4LC PJSRV05W-4LC IEC61000-4-2 OT-363 kc 2026 marking KC

    kc 2026

    Abstract: No abstract text available
    Text: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.


    Original     		PDF PJSRV05W-4LC PJSRV05W-4LC OT-363 2002/95/EC 2011-REV kc 2026

    kc 2026

    Abstract: No abstract text available
    Text: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.


    Original     		PDF PJSRV05W-4LC PJSRV05W-4LC IEC61000-4-2 OT-363 2011-REV RB500V-40 kc 2026

    PJSRV05W-4LC

    Abstract: No abstract text available
    Text: PJSRV05W-4LC LOW CAPACITANCE TVS DIODE ARRAY The PJSRV05W-4LC has a low typical capacitance of 0.8pF and operates with virtually no insertion loss to 1GHz.This makes the device ideal for protection of high-speed data lines such as USB2.0,Firewire,DVI,and Gigabit Ethernet interfaces.


    Original     		PDF PJSRV05W-4LC PJSRV05W-4LC IEC61000-4-2 OT-363 2002/95/EC 2011-REV RB500V-40

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS KLFM0520-N THRU KLFM0540-N Chip Low Leakage Schottky Barrier Rectifier List List. 1 Package outline. 2


    Original     		PDF KLFM0520-N KLFM0540-N MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038

    SMBJ15A

    Abstract: SMBJ40A SMBJ130A SMBJ170A SMBJ130CA SMBJ58A SMBJ100A SMBJ6.5A SMBJ12A SMBJ28A
    Text: SMBJ5.0A . SMBJ188A SMBJ5.0CA . SMBJ188CA 600 W Surface Mount Transient Voltage Suppressor Reverse stand-off Voltage 5.0 ÷ 188 V Peak Pulse Power Rating At 1 ms. Exp. 600 W DO-214AA SMB R FEATURES • Low profile package • Ideal for automated placement


    Original     		PDF SMBJ188A SMBJ188CA DO-214AA AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, Jun-13 SMBJ15A SMBJ40A SMBJ130A SMBJ170A SMBJ130CA SMBJ58A SMBJ100A SMBJ6.5A SMBJ12A SMBJ28A

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan     		PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    kc 2026

    Abstract: 100 KC 1N995 1N995M mil-s-19500 color coding
    Text: M IL-S-I9500/227 NAW j 16 AnrU 1062 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M 1. SCOPE 1.1 Scope. This specification covers the detail requirem ents for a germ anium switching diode and U in accordance with Specification M IL -S-19500. except as otherw ise specified herein.


    OCR Scan     		PDF MIL-S-I9500/227 1N995M MIL-S-19500, 1N995M MIL-S-19500 kc 2026 100 KC 1N995 mil-s-19500 color coding

    141C

    Abstract: LC74HC51 T370
    Text: SA N Y O = ; ¥ * 2 § - n - LC74HC51 f t Na2 0 2 6 a C M Q SM & M M aV 'vf <.256 X D u a l 2 - In p u t A N D / Q F | ìm t e fis s r G a te ¥mM>fWñzi~X Na*2026 WS L C 7 4 I I C I 5 1 Ì J AND OR 1NVEKTER I Ç % ;? 1 A -y -5. / / • C M O S f/ V J > y - h 7 ' D t 3 l t « 8 l / ,


    OCR Scan     		PDF LC74HC51 LC74HC5UJ 74LS0 Na2026-4M 141C LC74HC51 T370

    transistor kc 2026

    Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
    Text: MIL-S-19500/58D 28 February 1966 SUPERSEDING iUTT._rr_i a e;fin /K a n 1V A 1 U ~x “ *i/u W \Jf UUV/ 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TVDT? OMflfiR 1 1 X U CI11UUU This specification is m andatory for use by all D epart­


    OCR Scan     		PDF MIL-S-19500/58D MIL-T-195 00/58C 2N665 MIL-S-19500, MIL-S-19500/58D MIL-S-19500 transistor kc 2026 2N665 kc 2026 Germanium itt

    ECC 808 tube

    Abstract: ecc 808 ecc808 nf schaltungen ECC 808 ra 220 telefunken ra 200 MAX14G telefunken tubes 808 triode nf schaltungen
    Text: Netzröhre für GW-Helzung indirekt geheizt Parallelspeisung ECC 808 TiLEFUNKEN N F-Doppeltriode DC-AC-Heating Indirectly heated connected in parallel AF-Twin Triode Vorläufige technische Daten * Tentative data Uf 6,3 If 340 V mA Meßwerte • M easuring values


    OCR Scan     		PDF

    transistor kc 2026

    Abstract: RNS-D Germanium Transistor M/transistor kc 2026
    Text: MIL-S-19500/68A • a Miv "\o££ J *^rw w SUPERSEDING M IL -T -19500/68 Sig C 10 F ebruary 1959 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE;, TRANSISTOR, 2N- i2o> -PNP* GERMANIUM* SWITCHING T his specification is m andatory for use by a ll D epart­ m ents and A gencies of the D epartm ent of Defense.


    OCR Scan     		PDF MIL-S-19500/68A MIL-T-19500/68 MIL-STD-750 MlL-S-iS500/68A MIL-S-19500. MIL-S-19500 transistor kc 2026 RNS-D Germanium Transistor M/transistor kc 2026

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


    OCR Scan     		PDF

    2N1016B

    Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
    Text: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B 2N1016C 2N1016D MIL-S-19500, transistor kc 2026 102A MC 3041 2N1016 kc 2026

    transistor kc 2026

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 32E D ? cl li 7 G 7 k i DOGTlñ? T - tf- X l P t *'*' .i ‘ ' , V*-.-. - -‘¿-.'“/.'’"y-S S P N P Epitax ia l P la n a r S ilic o n C o m p o s it e T ra n s is to r 2029A Differential Amp Applications 975C Applications


    OCR Scan     		PDF SC-43 transistor kc 2026

    2SK595

    Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		PDF DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552

    sanyo 2033

    Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
    Text: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.


    OCR Scan     		PDF 1707k T-27-/S" 2SA608 2SC536 2SA608. 2SA608SPA 2SA608NP 2SA608KNP T-91-20 SC-43 sanyo 2033 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP

    transistor c2274

    Abstract: transistor a984 A984 sc2274 transistor sc2274 2SA984 c2274 2SC2274 C2274 E C2274K
    Text: SANYO S EM ICO NDUC TOR CORP 35E D • 7*H707fc, OOtHlfll 1 B9 ^ r -i:? -;:/ * PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 465F Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).


    OCR Scan     		PDF 50/80V) 500mA) 2SA984 T-91-20 SC-43 transistor c2274 transistor a984 A984 sc2274 transistor sc2274 c2274 2SC2274 C2274 E C2274K

    transistor kc 2026

    Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
    Text: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart­ m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,


    OCR Scan     		PDF MIL-S-19500/340 2N2079A Adc-19500/340 2N2079A 2N173 2N2079 2N277 2N2080, 2N2080A 2N278 transistor kc 2026 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026

    2N1652

    Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
    Text: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de­


    OCR Scan     		PDF MIL-S-19500/219A mil-S-19500/219 2N1651, 2N1652, 2N1653 Ic-25A 2N1652 2N1653 MIL-STD-780 2N1651 Germanium power

    RGN2004

    Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
    Text: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M B R 1535CT - M B R 15150CT TAIWAN SEMICONDUCTOR s 15.0 AMPS. Schottky Barrier Rectifiers RoHS TO-22QAB C O M P L IA N C E /4xa.-k: Features P la s t ic m a te r ia l u s e d c a r r ie s U n d e r w r it e r s La boratory C lassifications 94V 0 M e Lai s ilic o n ju n c t io n , m a jo r i ly c a r r ie r c o n d u c tio n


    OCR Scan     		PDF 1535CT 15150CT O-22QAB

    KB 7780

    Abstract: yd 803 ic
    Text: 4 0 0 W A T T S U R F A C E M O U N T SMAJ Series Features 400 watt peak pulse power dissipation Available in voltages from 5.0V to 170V Unidirectional and bidirectional Glass passivated junction Low clamping factor Each device 100% surge tested Absolute Maximum Ratings


    OCR Scan     		PDF UL94V-0 SMAJ160 SMAJ160A SMAJ170 SMAJ170A KB 7780 yd 803 ic