KCS10
Abstract: No abstract text available
Text: NCP1605 Product Preview Enhanced, High Voltage and Efficient Stand−by Mode, Power Factor Controller The NCP1605 is a controller that exhibits near−unity power factor while operating in fixed frequency, Discontinuous Conduction Mode or in Critical Conduction Mode.
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NCP1605
SOIC16
NCP1605/D
KCS10
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NCP1605G
Abstract: No abstract text available
Text: NCP1605, NCP1605A, NCP1605B Enhanced, High Voltage and Efficient Standby Mode, Power Factor Controller http://onsemi.com The NCP1605 is a controller that exhibits near−unity power factor while operating in fixed frequency, Discontinuous Conduction Mode DCM or in Critical Conduction Mode (CRM).
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NCP1605,
NCP1605A,
NCP1605B
NCP1605
NCP1605/D
NCP1605G
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Untitled
Abstract: No abstract text available
Text: NCP1605, NCP1605A Enhanced, High Voltage and Efficient Standby Mode, Power Factor Controller The NCP1605 is a controller that exhibits near−unity power factor while operating in fixed frequency, Discontinuous Conduction Mode DCM or in Critical Conduction Mode (CRM).
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NCP1605,
NCP1605A
NCP1605
NCP1605G
NCP1605/D
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ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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TC58128FT
Abstract: TC58128FTI TOSHIBA cmos memory -NAND
Text: TOSHIBA TC58128FTI TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 1024 blocks.
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TC58128FTI
128-MBIT
TC58128
528-byte
48-P-1220-0
TC58128FT
TC58128FTI
TOSHIBA cmos memory -NAND
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TH58512FT
Abstract: No abstract text available
Text: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TH58512FT
512-MBIT
TH58512
528-byte
48-P-1220-0
TH58512FT
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a package of mixed 2,097,152-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576
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50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
216-bit
48-pin
P-BGA48-1014-1
50VSF1420/1421
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toshiba NAND ID code
Abstract: No abstract text available
Text: TC5816BFT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X
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TC5816BFT
TC5816
264-byte,
264-byte
toshiba NAND ID code
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HA 4016
Abstract: KC08 70hmr
Text: TOSHIBA TH58512FT TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CM O S 512-MBIT 64M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553.648.128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.
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TH58512FT
512-MBIT
TH58512
528-byte
HA 4016
KC08
70hmr
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SmartMedia Logical Format
Abstract: TH58V128DC
Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
TH58V128DC
32MByte
FDC-22C
SmartMedia Logical Format
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TH58V128FT
Abstract: TH58
Text: TOSHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPR O M ) organized as 528 bytes X 32 pages X 1024 blocks.
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TH58V128FT
TH58V128
TSOPII44
40-P-400-0
TH58V128FT
TH58
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SmartMedia Logical Format
Abstract: TC58V64DC
Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and
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TC58V64DC
TC58V64DC
32MByte
FDC-22A
SmartMedia Logical Format
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cd4009 hex inverter ic
Abstract: AN-6539 6C04069
Text: G E SOLID STATE Dl D E | 3fl7S0fll DOlBa^a 1 j : 01E 13292_ D -, 3875081 G E SOLID STATE CD4069UB Types CMOS Hex Inverter Features: High-Voltage Types 20-Volt Rating The RCA-CD4069UB types consist of six CMOS Inverter circuits. These devices are intended fo r all general-purpose Inverter
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CD4069UB
20-Volt
RCA-CD4069UB
92C5-24440RI
cd4009 hex inverter ic
AN-6539
6C04069
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CD4049 ic 16 pin diagram
Abstract: CD4050 ic 16 pin diagram cd4049a IC CD4049 schematic diagram inverter 72 volt input TEA1043 CD4050A CD4049 CD4069 CD4050 pin diagram
Text: CD4049A, CD4050A Types CMOS Hex Buffer/Converters R E C O M M E N D E D O P E R A T IN G C O N D IT IO N S at T A = 2 5 ° C , Except as N oted. CD 4049A -ln verting Type CD 4050A —Non-Inverting Type For m axim um reliab ility, nom inal operating conditions should be selected so that
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CD4049A,
CD4050A
CD4049A-CD4050A-
CD4049A
CD4009A
CD4010A,
CD4049 ic 16 pin diagram
CD4050 ic 16 pin diagram
IC CD4049
schematic diagram inverter 72 volt input
TEA1043
CD4049
CD4069
CD4050 pin diagram
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF0400/0401ACXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF0400/0401ACXB is a m ixed containing a package 1,048,576-bit SRAM an d a 16,777,216-bit flash m em ory. The SRAM is organized as 131,072 words by 8 b its and the flash memory
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50VSF0400/0401ACXB
TH50VSF0400/0401ACXB
576-bit
216-bit
48-pin
P-BGA48-1014-1
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E^PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 bytes
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TC5816BDC
TC5816
264-byte,
264-byte
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TSOP 48 Package nand memory
Abstract: TC58256FT TSOP 48 Package nand memory toshiba
Text: TOSHIBA TC58256FT TO SHIBA M OS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 256-MBIT 32M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58256 is a single 3.3-V 256-Mbit (276,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 2048 blocks.
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TC58256FT
256-MBIT
TC58256
528-byte
48-P-1220-0
TSOP 48 Package nand memory
TC58256FT
TSOP 48 Package nand memory toshiba
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CD4511B
Abstract: No abstract text available
Text: CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-V o lt Rating a / c* 3 H 5 b 1 B 9 B 2 3 4 5 6 7 lc / sT The CD4511B types are BCD-to-7-segment latch decoder drivers con structe d w ith CMOS logic and n-p-n bipolar transistor out
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CD4511B
CD4511B
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TCS4H
Abstract: TC57H1024D EPROM 40PIN A150
Text: ' :!i; 1 M EGA B IT 6 5 , 5 3 6 W O R D X 1 6 B IT C M O S O N E T IM E PRO G RAM M ABLE READ O NLY M EM ORY D E S C R IP T IO N The TC54H1024P/F is a 65,536 word X 16 b it one tim e program m able read only memory, and m olded in a 40 pin plastic package.
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TC54H1024P/F
of40mA/lMHz.
TC57H1024D.
TC54H1024P
TC54H1024P/F.
TC54H1024P/F-85
TC54H1024P/F-10
DIP40-P-600
TCS4H
TC57H1024D
EPROM 40PIN
A150
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A-102
Abstract: TC57 TC57H1025AD-70 TC57h1025 A106 tvs A12o
Text: r t f'fTJoiriit’ r ii tf ln r î » TC57H1 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CMOS U.V. ERASABLE AND ELECTRICALLY PR O G RAM M A BLE READ ONLY M EM O RY DESCRIPTION T h e TC57H1025AD is a 65,536 word X 16 b it h ig h speed CMOS u ltra v io le t lig h t e rasa b le and
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TC57H1025AD
60mA/lMHz
TC57H1025AD.
TC57H1025ADâ
WDIF40-G-600A
A-102
TC57
TC57H1025AD-70
TC57h1025
A106 tvs
A12o
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SOP40 eprom
Abstract: A120 TC544096P TC574096D 371AL 62SV
Text: iSiii h f’fTt î iiS ïÜ IS 4 M E G A BIT 262,144 W 0 R D x 1 6 BIT C M O S O N E T IM E P R O G R A M M A B L E R EA D O N L Y M E M O R Y D ESCRIPTIO N The TC544096P/F is a 262,144 word X 16 b it CMOS one tim e program m able read only memory. The TC544096P/F is JE D E C stan d ard pin configuration.
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W0RDx16
TC544096P/F
120ns/150ns.
TC574096D
TC544096P/Fâ
DIP40â
SOP40 eprom
A120
TC544096P
371AL
62SV
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proton rx 4000 watts power amplifier circuit diagram
Abstract: RCA-CD401 cd22014 ICAN-6362 vogt 545 44 vogt inductor j9 570 17 013 20 RCA-CD4046B common cathode 7 SEGMENT DISPLAY LT 543 CD22014E CD22011
Text: RCA COS/MOS Integrated Circuits This DATABOOK contains complete technical information on RCA stand ard commercial COS/MOS integrated circuits. It covers the full line of RCA standard A- and B-series digital logic circuits, special-function circuits crosspoint switches and level shifters ,
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132nd
WA98121.
proton rx 4000 watts power amplifier circuit diagram
RCA-CD401
cd22014
ICAN-6362
vogt 545 44
vogt inductor j9 570 17 013 20
RCA-CD4046B
common cathode 7 SEGMENT DISPLAY LT 543
CD22014E
CD22011
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.
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TC58V32DC
TC58V32DC
528-byte,
528-byte
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eeprom toshiba L 510
Abstract: TC5832DC TC58V32DC
Text: TO SH IBA TENTATIVE TC5832DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC5832DC device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC5832DC
TC5832DC
528-byte,
528-byte
FDC-22
eeprom toshiba L 510
TC58V32DC
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