v23033
Abstract: double coil relay driver V23033-C1 v23033d1 V23033-C
Text: PCB relays 40 A class Power relay K-B and K-D Powertrain Systems Chassis Systems Safety Security Body Driver Information Convenience Features - Double make contact with high maximum switching voltage - Extremely high reliability as a twin contact Typical applications
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RS-407-A
V23033-C1
-B132
V23033-D1
v23033
double coil relay driver
v23033d1
V23033-C
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V23033-D1054-B132
Abstract: V23033-C1055-B132 V23033-C1 V23033 V23033-D1055-B132 V23033-C
Text: PCB relays Single relays Catalog 1308028 Issued 01-05 Power relay K-B and K-D Powertrain Systems Chassis Systems Safety Security Body Driver Information Convenience Description Features - Double make contact with high maximum switching voltage - Extremely high reliability as a
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3d01/33D
V23033-*
V23033-D1054-B132
V23033-C1055-B132
V23033-C1
V23033
V23033-D1055-B132
V23033-C
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v23033
Abstract: V23033-C1055-B132 V23033-D1054-B132 V23033-D1055-B132 V23033-C1054-B132
Text: PCB Relays Single Relays Catalog 1308028 Revision 03-06 Power Relay K-B and K-D Powertrain Systems Chassis Systems Revision 03-05 Safety Security Body Driver Information Convenience Description Features - Double make contact with high maximum switching voltage
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3d01/33D
V23033-*
v23033
V23033-C1055-B132
V23033-D1054-B132
V23033-D1055-B132
V23033-C1054-B132
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peltier element schematic
Abstract: peltier schematic peltier cooler wiring diagram thermoelectric generator by using peltier element peltier cooler schematic schematic TMS320F2812 DSP28x TMS320f2812 pwm DSP28 SPRA873
Text: Application Report SPRA873 - February 2003 Thermoelectric Cooler Control Using a TMS320F2812 DSP and a DRV592 Power Amplifier David M. Alter, Ph.D. DSP Applications - Semiconductor Group ABSTRACT This application report presents a thermoelectric cooler system consisting of a Texas
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SPRA873
TMS320F2812
DRV592
12-bit
peltier element schematic
peltier schematic
peltier cooler wiring diagram
thermoelectric generator by using peltier element
peltier cooler schematic
schematic TMS320F2812
DSP28x
TMS320f2812 pwm
DSP28
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ky 201 thyristor
Abstract: SMBJ8.5CA thyristor s 1210 bh TVS marking LZ ON KD 502 SMBJ15A SMBJ11CA crydom series cy lm 7410 thyristor bt 136
Text: Tr a n s i e n t V o l t a g e S u p p r e s s i o n T V S D i o d e s SMBJ5.0 – SMBJ170CA Series Invisible Protection MECHANICAL DATA When no problems exist, Crydom TVS • Case: D0214AA molded plastic Diodes are totally invisible to the circuits over glass passivated junction
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SMBJ170CA
D0214AA
UL94V
MIL-STD-750
ky 201 thyristor
SMBJ8.5CA
thyristor s 1210 bh
TVS marking LZ ON
KD 502
SMBJ15A
SMBJ11CA
crydom series cy
lm 7410
thyristor bt 136
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2110B
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FE3A
Abstract: H8S/2110 h8s-2110b TF256
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2110B
FE3A
H8S/2110
h8s-2110b
TF256
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Surface Mount MLC Capacitors
Abstract: radar circuit modulator nonlinear circuits handbook
Text: HIGH VOLTAGE CONSIDERATIONS WITH MLCs M. Prevallet, S. Bagdy, J. Prymak, M. Randall KEMET Electronics Corp., PO Box 5928 Greenville, SC, USA 29650 Abstract Mica and film capacitors dominate most of the high voltage applications. The combination of high voltage
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F-3256
Surface Mount MLC Capacitors
radar circuit modulator
nonlinear circuits handbook
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kd 998
Abstract: No abstract text available
Text: F A I R C H I L D SEM IC ONDUCTO R FD P6030L / Apnl 1998 tm FD B 6030L N -C h a n n e l L o g ic L evel E n h a n c e m e n t M o d e F ield E ffe c t T ra n s is to r General Description Features T h e s e N -C h a n n e l lo g ic le v e l e n h a n c e m e n t m o d e p o w e r
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P6030L
6030L
NDP6030L/NDB6030L.
FDP6030L
kd 998
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D SEM IC ONDUCTO R A p r il 1 9 9 8 tm FD P 7030L / FD B 7030L N -C h a n n e l L o g ic L evel E n h a n c e m e n t M o d e F ield E ffe c t T ra n s is to r G e n e ra l D e s c rip tio n F e a tu re s T h e s e N -C h a n n e l lo g ic le v e l e n h a n c e m e n t m o d e p o w e r fie ld
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7030L
7030L
FDP7030L
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R J u ly 1 9 9 8 tm F D P 6 6 7 0 A L /F D B 6 6 7 0 A L N -C h a n n e l L o g ic L evel P o w e rT re n c h M O S F E T G e n e r a l D e s c r ip t io n F e a tu re s T h is N -C h a n n e l L o g ic L e v e l M O S F E T h a s b e e n d e s ig n e d
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FDP6670AL
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R J u ly 1 9 9 8 tm F D P 7 0 3 0 B L /F D B 7 0 3 0 B L N -C h a n n e l L o g ic L evel P o w e rT re n c h M O S F E T G e n e r a l D e s c r ip t io n F e a tu re s T h is N -C h a n n e l L o g ic L e v e l M O S F E T h a s b e e n d e s ig n e d
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FDP7030BL
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MULTIWATT15
Abstract: SC-1237
Text: S GS-THOMSON :L iM !0 g S VN 410 SMART DIRECTION INDICATOR 2 CHANNEL DRIVERS TYPE V d SS(c I In ( * ) Ron VN 410 60V 4.8 A 0 .0 7 Q ln ( * ) : ISO definition nominal current for high side automotive switches. . . . . LOAD CURRENT UP TO 15A PER CHANNEL
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VN410
MULTIWATT15
SC-1237
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kd 998
Abstract: transistor kd 998
Text: M M OM w an A M P com pany Wireless Bipolar Power Transistor, 60W 900 - 960 MHz PH0810-60B Features • • • • • D esigned for L inear A m plifier A pplications Class AB: -50 dBc Typ 3rd 1MD at 60 W atts PEP C o m m o n E m itter C onfiguration In tern a l In p u t a n d O u tp u t Im p ed a n ce M atching
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PH0810-60B
kd 998
transistor kd 998
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PR O PR IE TA R Y' TO DEL FUSE INC, AND SH ALL NOT BE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN A PPR O VAL OF B E L FUSE INC, L ED I P O L A R I T Y PIN 21 + PIN 2 2 GREEN - + - CDLOR RoHS LED2 POLARITY
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2002/95/EC
100MHz
0MHz-100MHz
100kHz
DC002
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ky 201 thyristor
Abstract: NT 101-2s thyristor s 1210 bh thyristor bt 136 DI 944 KD thyristor BT 143 SMBJ15A KD 502 BT 1690 SMBJ33CA
Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s SM BJ5.0 SÜBJ170CA S e r ie s Control over power 3.30-3.81 2.0 1- 4.01 5/4,57- f JI J0.76/1.27L .f(J 2.74 MECHANICAL DATA • Case: D0214AA molded plastic over glass passivated junction
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STP19NB20
Abstract: No abstract text available
Text: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V dss RDS on Id STP19N B20 STP19NB20FP 200 V 200 V < 0.1 80 Î2 < 0.1 80 Q 19 A 10 A • . . . . TYPICAL RDS(on) = 0 .1 5 0 ^ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP19NB20
STP19NB20FP
STP19N
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transistor kd 998
Abstract: kd 998
Text: s= 7 SGS-THOMSON Ä 7 # K K g Ä L iM M tg S STP50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP50NE08 V dss RDS on Id 80 V < 0 .0 2 4 Q 50 A TYPICAL R d s (o ii) = 0.020 Q EXCEPTIO NALdv/dt CAPABILITY . 100% AVALANCHE TESTED
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STP50NE08
transistor kd 998
kd 998
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SWITCHING WELDING SCHEMATIC BY MOSFET
Abstract: Q575
Text: SGS-THOMSON !LiM iO gS STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB 50 S TP4N B 50FP . m . . . V dss RDS(on Id 5 00 V 500 V < 2.8 a < 2.8 a 3.8 A 2.5 A TYPICAL RDs(on) = 2.5 Q, 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STP4NB50
STP4NB50FP
SWITCHING WELDING SCHEMATIC BY MOSFET
Q575
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9NB50FP
Abstract: kd 998
Text: SGS-THOMSON !LiM@iO gS STP9NB50 STP9NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V STP9NB 50 S TP9N B 50FP dss 500 V 500 V R D S (o n Id < 0 .8 5 Q < 0 .8 5 Q 8.6 A 4 .9 A . TYPICAL RDS(on) = 0.75 Q m EXTREMELY HIGH dv/dt CAPABILITY . . .
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STP9NB50
STP9NB50FP
9NB50FP
kd 998
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2nb60
Abstract: No abstract text available
Text: s = 7 SGS-THOMSON ^7# Kl «iLiM(s iO(gS STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE S TD 2N B60 V dss RDS(on) Id 600 V < 3.6 Q 2.6 A • TYPICAL RDS(on) = 3 .3 Q m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES
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STD2NB60
O-251
2nb60
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG VV COPYRIGHT - RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. ALLE RECHTE VORBEHALTEN. 5 6 - D GESCHLOSSENER DECKEL
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22FEB95
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10BSP
Abstract: Smart meter
Text: r z 7 Ä T# S G S -T H O M S O N L iS M K S R VND10BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN D 10BSP V dss 40 V R d S o ii 0.1 Î Ï loUT V cc 3.4 A 26 V . OUTPUT CURRENT (CONTINUOUS): 1 4 A @ T C = 85°C PER CHANNEL . 5V LOGIC LEVEL COMPATIBLE INPUT
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VND10BSP
10BSP
VND10BSP
Smart meter
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icl2505
Abstract: vn02hsp
Text: VN02HSP HIGH SIDE SMART POWER SOLID STATE RELAY TYP E V dss R d S o i i lo U T Vcc VN02HSP 60 V 0 .4 Q. 6A 36 V . OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25°C . 5V LOG 1C LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN . OPEN DRAIN DIAGNOSTIC OUTPUT
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VN02HSP
VN02HSP
icl2505
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