xo 405 mf
Abstract: SM 8002C staa9fc SG-615PH C nct040c saronix nch060c hosonic crystal cross reference saronix NTH069C Siward crystal xtal Saronix STAA9FC
Text: GENERAL COMPETITOR CROSS REFERENCE Manufacturer Part Number Abracon Abracon Abracon Abracon Abracon Abracon Bliley Champion Champion Champion Champion Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen
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Original
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ABS07
ABS09
ABS10
ABS13
ABS25
C85A969
1629-A1
CFS-145
CFS-206
CFS-308
xo 405 mf
SM 8002C
staa9fc
SG-615PH C
nct040c
saronix nch060c
hosonic crystal cross reference
saronix NTH069C
Siward crystal xtal
Saronix STAA9FC
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PDF
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Oscillator KDS DOC
Abstract: kds 6 mhz crystal oscillator kds 4h KDS DOC KDS oscillator quartz kds KDS DOC-20NA KDS 12 MHZ crystal oscillator KDS 6 MHZ crystal kds6mhzcrystaloscillator
Text: m OSCILLATORS: Selection Guide KDS Crystal Oscillators KDS Oscillator products include hybrid oscillators that provide a full range of per formance options. KDS hybrid clock oscillators combine stateof-the-art technology im plem enting our precision quartz crystal resonatorstoachieve
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OCR Scan
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V27KS
557-7JW
Oscillator KDS DOC
kds 6 mhz crystal oscillator
kds 4h
KDS DOC
KDS oscillator
quartz kds
KDS DOC-20NA
KDS 12 MHZ crystal oscillator
KDS 6 MHZ crystal
kds6mhzcrystaloscillator
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PDF
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KDS 9E
Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
Text: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter
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OCR Scan
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O-220
C67078-S1302-A2
SIL03609
SILQ3610
SIL03611
SIL03612
KDS 9E
l0225
C67078-A1307-A3
KDS 7B
KDS 1M
ksd 202
transistor buz 36
KDS 7c
C67078-S1302-A2
transistor buz 293
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PDF
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CFY75
Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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OCR Scan
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Q62702-F1368
Q62702-F1369
235b05
DDL75MG
CFY75
EHT08184
fl235b05
0QL7S41
CFY75
cfy 75
cfy 14 siemens
HEMT marking P
FMI 591
cfy siemens
CFY 19
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PDF
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BF961
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage
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OCR Scan
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BF961
Q62702-F518
A235b05
QDbbfl37
EHM07003
fi23SbD5
BF961
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PDF
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2SK54
Abstract: No abstract text available
Text: 2SK54î'U a V N * * ^ ^ S M F E T S IL IC O N N - C H A N N E L J U N C T I O N F E T VH F A M S * « , V H F A M P L IF IE R , MIXER ïS*ê*ffi 20 1. Y - h ! Gate 2. y — X ; Source 3. K u- 4 > : Drain Di mensions in mm (JE D E C TO-92) A B S O L U T E M A X IM U M R A T I N G S (7*0=2513 )
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OCR Scan
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2SK54
Vw-10Vt
fis-330,
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PDF
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transistor SMD 1p4
Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
Text: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab
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OCR Scan
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TQ-220AB
C67078-A5007-A2
Q67060-S6202-A2
E3043
Q67060-S6202-A4
GPT05165
O-22QAB/5,
E3062
BTS432E2
E3062A
transistor SMD 1p4
KDS IR Sensor
4 MHZ KDS 6b
transistor smd 4ss
410F2
C67078-A5007-A9
siemens nox sensor
siemens bts 130
BTS 432 D2 E3043
BTS121A
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PDF
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Untitled
Abstract: No abstract text available
Text: H I TA .rh l / -C OP T Ö E L E C T R O N I C S } 73C D BM H ibriUb UUCmüU i 2SK 1960 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • High Speed Sw itching. • High Cutoff Frequency. • E nh ancem ent-M ode.
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OCR Scan
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2SK1960
200mA,
200mA.
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PDF
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2SJ120
Abstract: 2SK416 2SJ120S 2SK416L C3S30
Text: 2S K 416 L ,2S K 416 s y U =1> N 9 V * JUMOS FET_ SILICON N-CHANNEL MOS FET *»*• «* y f >9 ñ 2SJ120 L ,2SJ120 § t =1> HIGH SPEED POW ER SWITCHING Complementary pair with 2SJ120 , 2SJ120S * > £ V T=P (DType 1. 2. Y — h ! G ate Y V -{ y \ D rain
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OCR Scan
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2SK416L,
2SJ120CL
2SJ120
2SJ120Â
2SJ120S
2SK416Â
Ta-25Â
2SK416
2SJ120S
2SK416L
C3S30
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PDF
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siemens gaas fet
Abstract: E7916 pinFET marking c6 cerec
Text: SIEMENS GaAs FET CFY 25-20 E7916 Preliminary Data • • • • • Low noise High gain Low gate-leakage current All gold metallization For high-speed fibre optic receivers and PIN-FET modules up to 2.4 Gbit/sec VC E05255 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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E7916
E05255
E7916
Q62703-F113
fl23SbOS
D0b7S13
A235b05
00b7Sm
siemens gaas fet
pinFET
marking c6
cerec
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PDF
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2SK399
Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.
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OCR Scan
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2SJ113
2SK399
2SJ113
44TB2
diode lo2a
GG13
J-10
Hitachi Scans-001
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PDF
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2SK399
Abstract: 2SJ113 J-10
Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.
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OCR Scan
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2SJ113
GG1304Ã
2SK399
2SJ113
J-10
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C
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OCR Scan
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O-204
C67078-A1009-A3
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PDF
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2SK683
Abstract: 2SK682 2SK68 DIODE 720
Text: blE D 44^b20S 00131E1 L3L IHITM 2SK682,2SK683 SILICO N N -C H A N N E L MOS FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter
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OCR Scan
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00L31E1
2SK682
2SK683
2SK682,
GD1312M
2SK68
DIODE 720
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PDF
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BSM254F
Abstract: BSM254
Text: SIEMENS SIMOPAC Module VDS Io R BSM 254 F = 500 V = 2 x 35 A D S on = 0 . 1 7 LI • Power module • Half-bridge • FREDFET • N channel • Enhancement mode • Package with insulated metal base plate • Package outline/Circuit diagram: 2a1) T y p e _
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OCR Scan
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C67076-A1150-A2
BSM254F
BSM254
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIMOPAC Module BSM 151 VDS = 500 V I D =48 A R DS on = 0.12 Q • • • • • • Power module Single switch N channel Enhancem ent mode Package with insulated metal base plate Package outline/C ircuit diagram : 11) Type O rdering Code BSM 151
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OCR Scan
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C67076-A1004-A2
SIM00046
SIM00006
BSM151
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PDF
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2SK554
Abstract: 2SK555 7V25 DIODE T25 4 Jo Hitachi Scans-001
Text: IHIT 4 hlE D 2SK554,2SK555 HITACHI/COPTOELEC TRO NICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed Switching. • Low Drive Current. • No Secondary Breakdown. • Suitable for Switching Regulator,
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OCR Scan
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lb20S
GG130Ã
2SK554
2SK555
O-220AB)
-2SK554,
2SK555
7V25
DIODE T25 4 Jo
Hitachi Scans-001
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 964 S • For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type Marking Ordering Code BF 964 S - Q62702-F446 Pin Configuration 1 2 3 4 S D Gz Package1 Gì
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OCR Scan
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Q62702-F446
EHT07163
6235b05
BF964S
EHM07007
fl235bOS
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PDF
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BSM141
Abstract: No abstract text available
Text: SIEMENS S IM O P A C M o d u le B S M V DS = 400 V / o = 60 A DS on = 0.075 • Power module • Single switch • N channel • Enhancement mode • Package with insulated metal base plate • Package outline/Circuit diagram: 11) Type Ordering Code BSM 141
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OCR Scan
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C67076-A1010-A2
SIM0003B
BSM141
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PDF
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Untitled
Abstract: No abstract text available
Text: ÖE35b05 OOfllBOñ bñT SIEMENS HITFET BTS 149 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input
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OCR Scan
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E35b05
DDA1313
BTS149
TQ220_
T0220
E3045A
Q67060-S6503-A2
Q67060-S6503-A3
GPTO5I55
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors • • • BUZ 76 BUZ 76 A N channel Enhancement mode Avalanche-rated Type ^DS Id ^DS on Package 1> O rdering Code BUZ 76 400 V 3.0 A 37 "C 1.8 Q TO -220 AB C 67078-S 1315-A2 BUZ 76 A 400 V 2.7 A 23 ”C 2.5 n TO -220 AB
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OCR Scan
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67078-S
1315-A2
C67078-S1315-A3
BUZ76
SIL03374
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PDF
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BUZ211
Abstract: UZ210 kds 210
Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C
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OCR Scan
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O-204
67078-A1102-A2
C67078-A1100-A2
210/BÜ
SIL02771
BUZ211
UZ210
kds 210
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vds 50 V ^DS on 0.04 ß hi 30 A Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-220
C67078-S1301-A2
6E35b05
GGfl4020
535b05
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PDF
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8070N
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Type Vos Io BUZ 16 50 V 48 A 0.018 Q BUZ 16 S2 60 V 48 A ¡0 .0 1 8 Q R D S o n M axim um Ratings Param eter Continuous drain current , T C = 19 'C Pulsed drain current, Tc = 2 5 ‘ C
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OCR Scan
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O-204
8070N
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PDF
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