KDS123U
Abstract: IR 30 D1
Text: SEMICONDUCTOR KDS123U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package E B M M D J 3 1 G A 2
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KDS123U
KDS123U
IR 30 D1
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KDS123U
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS123U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package B M M D J G A 2 3 1
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KDS123U
KDS123U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS123U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Low Forward Voltage B M M Fast Reverse Recovery Time Small Total Capacitance D J A 2 G Ultra- Small Surface Mount Package 3 1 DIM A B C MILLIMETERS
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KDS123U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS123U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008. 9. 8 Revision No : 1 1/3
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KDS123U
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KDS123U
Abstract: marking JB diode diode marking ja E2 marking diode G marking mark US marking 5B marking E1 transistor marking JB US marking
Text: SEMICONDUCTOR KDS123U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking US 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark US KDS123U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS123U
KDS123U
marking JB diode
diode marking ja
E2 marking diode
G marking
mark US
marking 5B
marking E1
transistor marking JB
US marking
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marking M3
Abstract: KDV174 KDS123
Text: SEMICONDUCTOR KDV174 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking M3 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark M3 KDS123U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDV174
KDS123U
marking M3
KDV174
KDS123
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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